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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC482ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
v00.0604
General Description
Features
Functional Diagram
The HMC482ST89 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifi er
covering DC to 5 GHz. Packaged in an industry
standard SOT89, the amplifi er can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +24 dBm output power.
The HMC482ST89 offers 19 dB of gain with a +36
dBm output IP3 at 1 GHz while requiring only 110
mA from a single positive supply. The Darlington
feedback pair results in reduced sensitivity to
normal process variations and excellent gain
stability over temperature while requiring a minimal
number of external bias components.
P1dB Output Power: +22 dBm
Gain: 20 dB
Output IP3: +36 dBm
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
Industry Standard SOT89 Package
Typical Applications
The HMC482ST89 is an ideal RF/IF
gain block & LO or PA driver for:
Cellular / PCS / 3G
Fixed Wireless, WLAN & WiMAX
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 27 Ohm, T
A
= +25 C
Note: Data taken with broadband bias tee on device output.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
17
15
12.5
10
8
19
17
14.5
12
10
dB
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
0.016
dB/ C
Input Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
15
18
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
20
14
12
8
dB
dB
dB
dB
Reverse Isolation
DC - 5.0 GHz
16
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
19.5
17
14.5
12.5
10.5
22.5
20
17.5
15.5
13.5
dBm
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
36
35
32
30
28
dBm
dBm
dBm
dBm
dBm
Noise Figure
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
4
5
5.5
dB
dB
dB
Supply Current (Icq)
110
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC482ST89
Output Return Loss vs. Temperature
v00.0604
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
6
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC482ST89
v00.0604
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 110 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 27 Ohms
10
12
14
16
18
20
22
24
26
28
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
38
40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
36
40
6
7
8
9
10
11
12
Gain(dB)
P1dB(dBm)
Psat(dBm)
OIP3(dBm)
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
108
110
112
114
116
118
120
122
124
126
128
4.6
4.7
4.8
4.9
5
5.1
5.2
I
cc (mA)
Vcc (Vdc)
+25C
-40C
+85C
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC482ST89
v00.0604
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vcc = +5 Vdc)
+17 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 14.5 mW/C above 85 C)
0.94 W
Thermal Resistance
(junction to lead)
69 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
ESD Sensitivity (HBM)
Class 1A
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE
"MICRO-X
PACKAGE"
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC482ST89
v00.0604
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5000
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
C1, C2
0.01 F
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
6V
8V
10V
12V
R
BIAS
V
ALUE
9.1
27
47
62
R
BIAS
P
OWER
R
ATING
1/4 W
1/2 W
1 W
1.5 W
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