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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
v00.0903
General Description
Features
Functional Diagram
The HMC498 is a high dynamic range GaAs
PHEMT MMIC Power Amplifi er which operates
between 17 and 24 GHz. The HMC498 provides
24 dB of gain, +27 dBm of saturated power and
25% PAE from a +5.0 V supply voltage. The
HMC498 amplifi er can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small size.
All data is with the chip in a 50 Ohm test fi xture
connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
+34 dBm Output IP3
Saturated Power: +27 dBm @ 25% PAE
Gain: 24 dB
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
2.38 mm x 1.46 mm x 0.1 mm
Electrical Specifi cations,
T
A
= +25 C, Vdd = 5V, Idd = 250 mA*
Typical Applications
The HMC498 is ideal for use as a power
amplifi er for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
17.0 - 19.0
19.0 - 22.0
22.0 - 24.0
GHz
Gain
20
23
21
24
20
23
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
0.03
0.04
dB/ C
Input Return Loss
11
11
8
dB
Output Return Loss
20
18
15
dB
Output Power for 1 dB Compression (P1dB)
20
23.5
22
25
21
24
dBm
Saturated Output Power (Psat)
27
26.5
25.5
dBm
Output Third Order Intercept (IP3)
34
34
34
dBm
Noise Figure
3.5
4.0
4.5
dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
250
250
250
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical.
MICROWAVE CORPORATION
1 - 113
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC498
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
v00.0903
Broadband Gain & Return Loss
Gain vs. Temperature
P1dB vs. Temperature
Psat vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
12
14
16
18
20
22
24
26
28
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
1 - 114
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
v00.0903
Power Compression @ 20 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage@ 20 GHz,
Idd= 250 mA
Reverse Isolation vs. Temperature
Power Compression @ 24 GHz
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
38
40
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
3
3.5
4
4.5
5
5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (d
Bm), Psat (dBm)
Vdd Supply Voltage (Vdc)
-70
-60
-50
-40
-30
-20
-10
0
16
17
18
19
20
21
22
23
24
25
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
1 - 115
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
v00.0903
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-4.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+20 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 29 mW/C above 85 C)
2.65 W
Thermal Resistance
(channel to die bottom)
34 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (Vdc)
Idd (mA)
+4.5
241
+5.0
250
+5.5
258
+3.0
240
+3.5
250
+4.0
259
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown above. Vgg
adjusted to achieve Idd= 250 mA at +5.0V and +3.5V.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND IS .004" SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
MICROWAVE CORPORATION
1 - 116
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
v00.0903
Pad Descriptions
Pin Number
Function
Description
Interface Schematic
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
17 - 24 GHz.
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF and 0.01
F are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from
17 - 24 GHz.
6
Vgg
Gate control for amplifi er. Adjust to achieve Idd of 250 mA.
Please follow "MMIC Amplifi er Biasing Procedure"
Application Note. External bypass capacitors of 100 pF
and 0.01
F are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
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