A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 204
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
v00.0206
General Description
Features
Functional Diagram
The HMC564 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifi er (LNA) chip which operates
from 7 to 13.5 GHz. The HMC564 features extremely
fl at performance characteristics including 17 dB of
small signal gain, 1.8 dB of noise fi gure and output
IP3 of 24 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, consitant output power, single
+3V supply operation, and DC blocked RF I/O's.
All data is measured with the chip in a 50 Ohm test
fi xture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Noise Figure: 1.8 dB
Gain: 17 dB
OIP3: 24 dBm
Single Supply: +3V @ 51 mA
50 Ohm Matched Input/Output
Small Size: 1.96 x 0.98 x 0.10 mm
Electrical Specifications,
T
A
= +25 C, Vdd 1, 2 = +3V
Typical Applications
The HMC564 is ideal for use as a LNA or driver ampli-
fi er for:
Point-to-Point Radios
Point-to-Multi-Point Radios
Test Equipment and Sensors
Military & Space
Parameter
Min.
Typ.
Max.
Units
Frequency Range
7 - 13.5
GHz
Gain
14
17
dB
Gain Variation Over Temperature
0.02
0.03
dB/ C
Noise Figure
1.8
2.2
dB
Input Return Loss
15
dB
Output Return Loss
16
dB
Output Power for 1 dB Compression (P1dB)
9
12
dBm
Saturated Output Power (Psat)
14.5
dBm
Output Third Order Intercept (IP3)
24
dBm
Supply Current (Idd)(Vdd = +3V)
51
mA
A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 205
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
6
7
8
9
10
11
12
13
14
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
v00.0206
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
GAIN
(dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
-50
-40
-30
-20
-10
0
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 206
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
P1dB vs. Temperature
Power Compression @ 8 GHz
Psat vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 8 GHz
0
4
8
12
16
20
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
v00.0206
0
5
10
15
20
-15
-10
-5
0
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE(%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
2.5
3
3.5
GAIN (dB), P1dB (dBm)
NOI
SE FI
GURE (dB)
Vdd (Vdc)
Gain
P1dB
Noise Figure
0
4
8
12
16
20
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
Output IP3 vs. Temperature
5
10
15
20
25
30
35
6
7
8
9
10
11
12
13
14
+25C
+85C
-55C
OIP3 (dBm)
FREQUENCY (GHz)
A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 207
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
+3.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 12.97 mW/C above 85 C)
1.17 W
Thermal Resistance
(channel to die bottom)
77 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (Vdc)
Idd (mA)
+2.5
49
+3.0
51
+3.5
53
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND IS .004" SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
v00.0206
A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
IN
This pad is AC coupled and matched to
50 Ohms from 7 - 13.5 GHz.
2, 3
Vdd1, 2
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF and 0.1 F are required.
4
OUT
This pad is AC coupled and matched to
50 Ohms from 7 - 13.5 GHz.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
v00.0206
PDF 
ZIP