HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200105
Issued Date : 2001.12.01
Revised Date : 2003.03.12
Page No. : 1/5
HBT134XI Series
HSMC Product Specification
HBT134XI Series
TRIAC, LOGIC LEVEL & STANDARD
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in
general purpose bidirectional switching and phase control applications,
where high sensitivity is required in all four quadrants.
Quick Reference Data
Part No.
V
DRM
(V)
I
T(RMS)
(A)
I
TSM
(A)
Quadrant
HBT134CI
600
4
30
All
HBT134DI
600
4
30
I - II - III
HBT134GI
800
4
30
All
HBT134HI
800
4
30
I - II - III
Pin Configuration
Pin
Description
1
Main terminal 1
2
Main terminal 2
3
Gate
1 2 3
tab
Symbol
T2
T1
G
Limtiing Values
Symbol
Parameter
Min.
Max.
Units
HBT134CI / DI Repetitive peak off-state voltages
-
600
V
V
DRM
HBT134GI / HI Repetitive peak off-state voltages
-
800
V
I
T(RMS)
RMS on-state current
-
4
A
I
TSM
Non-repetitive peak on-state current
-
30
A
I
2
t
I
2
t for fusing
-
3.7
A
2
S
Repetitive rate of rise of on-state current after triggering
T2+ G+
-
50
A/us
T2+ G-
-
50
A/us
T2- G-
-
50
A/us
dI
T
/dt
T2- G+ (HBT134DI / HI without this quadrant)
-
10
A/us
I
GM
Peak gate current
-
1
A
V
GM
Peak gate voltage
-
7
V
P
GM
Peak gate power
-
1.5
W
P
G(AV)
Average gate power
-
0.1
W
Tstg
Storage Temperature Range
-
150
C
Tj
Operating junction temperature
-40
125
C
TO-251
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200105
Issued Date : 2001.12.01
Revised Date : 2003.03.12
Page No. : 2/5
HBT134XI Series
HSMC Product Specification
HBT134CI / HBT134GI
Electrical Characteristics
(Ta=25
C, unless otherwise stated, 4 Quadrant)
Rank
Symbol
Parameter
Conditions
T
U
Unit
V
D
=6V, R
L
=10
, T2+ G+
5
10
mA
V
D
=6V, R
L
=10
, T2+ G-
5
10
mA
V
D
=6V, R
L
=10
, T2- G-
5
10
mA
I
GT
Gate Trigger Current
V
D
=6V, R
L
=10
, T2- G+
10
25
mA
V
D
=6V, R
L
=10
, T2+ G+
15
15
mA
V
D
=6V, R
L
=10
, T2+ G-
20
20
mA
V
D
=6V, R
L
=10
, T2- G-
15
15
mA
I
L
Latching Current
V
D
=6V, R
L
=10
, T2- G+
20
20
mA
I
H
Holding Current
V
D
=12V, I
GT
=0.1A
15
15
mA
V
T
On-state Voltage
I
T
=4.5A
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G+
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G-
1.5
1.5
V
V
D
=6V, R
L
=10
, T2- G-
1.5
1.5
V
V
GT
Gate Trigger Voltage
V
D
=6V, R
L
=10
, T2- G+
1.8
1.8
V
I
D
Off-state Leakage
Current
V
D
=V
DRM
200
200
uA
HBT134DI / HBT134HI
Electrical Characteristics
(Ta=25
C, unless otherwise stated, 3 Quadrant)
Rank
Symbol
Parameter
Conditions
T
U
Unit
V
D
=6V, R
L
=10
, T2+ G+
5
10
mA
V
D
=6V, R
L
=10
, T2+ G-
5
10
mA
V
D
=6V, R
L
=10
, T2- G-
5
10
mA
I
GT
Gate Trigger Current
V
D
=6V, R
L
=10
, T2- G+
-
-
mA
V
D
=6V, R
L
=10
, T2+ G+
15
15
mA
V
D
=6V, R
L
=10
, T2+ G-
20
20
mA
V
D
=6V, R
L
=10
, T2- G-
15
15
mA
I
L
Latching Current
V
D
=6V, R
L
=10
, T2- G+
-
-
mA
I
H
Holding Current
V
D
=12V, I
GT
=0.1A
15
15
mA
V
T
On-state Voltage
I
T
=4.5A
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G+
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G-
1.5
1.5
V
V
D
=6V, R
L
=10
, T2- G-
1.5
1.5
V
V
GT
Gate Trigger Voltage
V
D
=6V, R
L
=10
, T2- G+
-
-
V
I
D
Off-state Leakage
Current
V
D
=V
DRM
200
200
uA
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200105
Issued Date : 2001.12.01
Revised Date : 2003.03.12
Page No. : 3/5
HBT134XI Series
HSMC Product Specification
Static Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
=67% V
DRM(max)
;
Tj= 125
C; exponential waveform;
gate open circuit
-
50
-
V/us
tgt
Gate controlled
turn-on time
I
TM
=6A; V
D
=V
DRM(max)
;
I
G
=0.1A; dI
G
/dt=5A/us
-
2
-
us
Thermal Resistances
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Rth j-mb
Thermal resistance junction to mounting
base
Rth j-a
Thermal resistance junction to ambient
Full cycle
Half cycle
In free air
-
-
-
-
-
60
3.0
3.7
-
K/W
K/W
K/W
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200105
Issued Date : 2001.12.01
Revised Date : 2003.03.12
Page No. : 4/5
HBT134XI Series
HSMC Product Specification
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25
o
C),
Versus Air Temperature Ta
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
20
40
60
80
100
120
140
Ta(
o
C)
IG
T
/
IG
T
(
2
5
o
C)
T2+/G+
T2+/G-
T2-/G-
T2-/G+
Typical & Maximum On-State Characteristic
0
1
2
3
4
5
6
7
8
9
10
11
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VT/V
IT
/
A
typ
25C
125C
Normalised Latching Current IL(Ta)/IL(25
o
C),
Versus Air Temperature Ta
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
Ta(
o
C)
I
L
/
I
L(
25
o
C)
Maximum On-State Dissipation, Ptot Versus Rms
On-State Current, a=Conduction Angle
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
3.0
4.0
5.0
IT(RMS)/A
P
t
o
t/w
a=90
a=120
a=180
a
a
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25
o
C),
Versus Air Temperature Ta
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
Ta(
o
C)
VG
T
/
VG
T
(
2
5
o
C)
T2+/G+
T2-/G-
Normalised Holding Current IH(Ta)/IH(25
o
C),
Versus Air Temperature Ta
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
140
Ta/(
o
C)
IL
/IL
(
2
5
o
C)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200105
Issued Date : 2001.12.01
Revised Date : 2003.03.12
Page No. : 5/5
HBT134XI Series
HSMC Product Specification
TO-251 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.2559
-
6.50
-
B
0.0354
0.0591
0.90
1.50
H
-
*0.1811
-
*4.60
C
0.0177
0.0236
0.45
0.60
I
-
0.0354
-
0.90
D
0.0866
0.0945
2.20
2.40
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2677
0.2835
6.80
7.20
Notes:
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
E
F
G
H
J
I
3
2
1
K
C
D
B
Tab
3-Lead TO-251 Plastic Package
HSMC Package Code: I
Marking:
Date Code
3
1
4
H
T
Control Code
B
Rank Code
Serial Code
Style: Pin 1. Main terminal 1
2. Main terminal 2
3. Gate
Tab connected to main terminal 2
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