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Электронный компонент: HI122

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 2000.11.01
Page No. : 1/2
HSMC Product Specification
HI122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI122 is designed of general purpose and low speed switching
applications.
Features
High DC current gain
Bult-in a damper diode at E-C
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150
C
Junction Temperature ......................................................................................................+150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) ...................................................................................... 20W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................. 8 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=1mA
BVCEO
100
-
-
V
IC=30mA
BVEBO
5
-
-
V
IE=1mA
ICBO
-
-
10
uA
VCB=100V
ICEO
-
-
10
uA
VCE=50V
IEBO
-
-
2
mA
VEB=5V
*VCE(sat)1
-
-
2
V
IC=4A, IB=16mA
*VCE(sat)2
-
-
4
V
IC=8A, IB=80mA
*VBE(sat)
-
-
4.5
V
IC=8A, IB=80mA
*VBE(on)
-
-
2.8
V
VCE=4V, IC=4A
*hFE1
1K
-
12K
VCE=4V, IC=4A
*hFE2
100
-
-
VCE=4V, IC=8A
Cob
-
130
-
pF
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 2000.11.01
Page No. : 2/2
HSMC Product Specification
TO-251 Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.2559
-
6.50
-
B
0.0354
0.0591
0.90
1.50
H
-
*0.1811
-
*4.60
C
0.0177
0.0236
0.45
0.60
I
-
0.0354
-
0.90
D
0.0866
0.0945
2.20
2.40
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2677
0.2835
6.80
7.20
Notes :
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
A
E
F
G
H
J
I
3
2
1
K
C
D
B
Style : Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
HSMC Package Code : I
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Mark