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Электронный компонент: HLB123

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 1/4
HLB123D
HSMC Product Specification
HLB123D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123D is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ........................................................................................................ -50 ~ +150
C
Junction Temperature ................................................................................................ +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C)................................................................................................. 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC) .................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Electrical Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=1mA, IE=0
BVCEO
400
-
-
V
IC=10mA, IB=0
BVEBO
8
-
-
V
IE=1mA, IC=0
ICBO
-
-
10
uA
VCB=600V, IE=0
IEBO
-
-
10
uA
VBE=9V, IC=0
*VCE(sat)1
-
-
0.8
V
IC=0.1A, IB=10mA
*VCE(sat)2
-
-
0.9
V
IC=0.3A, IB=30mA
*VBE(sat)1
-
-
1.2
V
IC=0.1A, IB=10mA
*VBE(sat)2
-
-
1.8
V
IC=0.3A, IB=30Ma
*hFE1
10
-
50
IC=0.3A, VCE=5V
*hFE2
10
-
-
IC=0.5A, VCE=5V
*hFE3
6
-
-
IC=1A, VCE=5V
Ton
-
0.4
1.1
uS
VCC=100V, IC=1A, IB1=IB2=0.2A
Tstg
-
2.4
4
uS
VCC=100V, IC=1A, IB1=IB2=0.2A
Toff
-
0.3
0.7
uS
VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Classification Of hFE1
Rank
B1
B2
B3
B4
B5
B6
B7
B8
Range
10-17
13-22
18-27
23-32
28-37
33-42
38-47
43-50
TO-126ML
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 2/4
HLB123D
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1
10
100
1000
10000
Collector Current I
C
(mA)
hFE
hFE @ V
CE
=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
ag
e (
m
V
)
125
o
C
75
o
C
25
o
C
V
BE(sat)
@ I
C
=10I
B
On Voltage & Collector Current
100
1000
1
10
100
1000
Collector Current (mA)
O
n
V
o
l
t
ag
e (
m
V
)
V
BE(on)
@ V
CE
=5V
Capacitance & Reverse-Biased Volatge
1
10
100
0.1
1
10
100
Reverse-Biased Voltage (V)
C
apa
c
i
t
anc
e (
p
F)
Cob
Switching Time & Collector Current
0.1
1.0
10.0
0.1
1.0
Collector Current (A)
S
w
it
c
h
in
g
T
i
m
e
(
u
s
)
Tstg
V
CC
=100V, I
C
=5I
B1
=-5I
B2
Tf
Ton
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 3/4
HLB123D
HSMC Product Specification
Safe Operating Area
10
100
1000
10000
1
10
100
1000
Forward Voltage (V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
m
A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 4/4
HLB123D
HSMC Product Specification
TO-126ML Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1356
0.1457
3.44
3.70
I
-
*0.1795
-
*4.56
B
0.0170
0.0272
0.43
0.69
J
0.0268
0.0331
0.68
0.84
C
0.0344
0.0444
0.87
1.12
K
0.5512
0.5906
14.00
15.00
D
0.0501
0.0601
1.27
1.52
L
0.2903
0.3003
7.37
7.62
E
0.1131
0.1231
2.87
3.12
M
0.1378
0.1478
3.50
3.75
F
0.0737
0.0837
1.87
2.12
N
0.1525
0.1625
3.87
4.12
G
0.0294
0.0494
0.74
1.25
O
0.0740
0.0842
1.88
2.14
H
0.0462
0.0562
1.17
1.42
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
N
D
E
M
L
K
F
I
A
B
C
H
J
3
2
1
O
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
Marking:
Date Code
2
1
3
H
B
Control Code
L
D
B
Rank would show on label