ChipFind - документация

Электронный компонент: HM772

Скачать:  PDF   ZIP
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 1/5
HM772
HSMC Product Specification
HM772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM772 is designed for use in output stage of amplifier, voltage
regulator, DC-DC converter and driver.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) ........................................................................... 0.5 W
(Note1)
Total Power Dissipation (Ta=25
C) ............................................................................... 2 W
(Note2)
Total Power Dissipation (Tc=25
C)............................................................................... 1 W
(Note1)
Total Power Dissipation (Tc=25
C) ............................................................................... 4 W
(Note2)
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage ........................................................................................ -40 V
VCEO Collector to Emitter Voltage ..................................................................................... -30 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current (continuous) ......................................................................................... -3 A
IC Collector Current (pulse).......................................................................................... -7 A
(Note3)
Thermal Characteristic
Characteristic
Symbol
Max.
Unit
Thermal Resistance, junction to ambient
(Note1)
R
ja
250
o
C/W
Thermal Resistance, junction to ambient
(Note2)
R
ja
62.5
o
C/W
Thermal Resistance, junction to case
(Note1)
R
jc
125
o
C/W
Thermal Resistance, junction to case
(Note2)
R
jc
31.25
o
C/W
Note1: When tested in free air condition, without heat sinking.
Note2: When mounted on a 40X40X1mm ceramic board.
Note3: Single pulse PW=1ms
SOT-89
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 2/5
HM772
HSMC Product Specification
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA
BVCEO
-30
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-10uA
ICBO
-
-
-1
uA
VCB=-30V
IEBO
-
-
-1
uA
VEB=-3V
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-0.2A
*VBE(sat)
-
-1
-2
V
IC=-2A, IB=-0.2A
*hFE1
30
-
-
VCE=-2V, IC=-20mA
*hFE2
100
160
500
VCE=-2V, IC=-1A
fT
-
80
-
MHz
VCE=-5V, IC=-100mA, f=100MHz
Cob
-
55
-
pF
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE2
Rank
Q
P
E
Range
100-200
160-320
250-500
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 3/5
HM772
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hF
E
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=2V
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=20I
B
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=40I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
125
o
C
25
o
C
75
o
C
V
BE(sat)
@ I
C
=10I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 4/5
HM772
HSMC Product Specification
Capacitance & Reverse-Biased Voltage
1
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
C
a
pac
i
t
an
c
e
(
p
F
)
Cob
Cutoff Frequency & Collector Current
1
10
100
1000
1
10
100
1000
Collector Current (mA)
C
u
to
ff F
r
e
q
u
e
n
c
y
(
M
H
z
)
...
V
CE
=5V
Power Derating
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
25
50
75
100 125 150 175 200 225 250
Ta (C), Ambient Temperature
P
d
(W
),
P
o
w
e
r D
i
s
s
i
p
a
t
i
o
n
Safe Operating Area
1
10
100
1000
10000
1
10
100
Forward Biased Voltage-V
CE
(V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
-
I
C
(mA
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 5/5
HM772
HSMC Product Specification
SOT-89 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1732
0.1811
4.40
4.60
F
0.0583
0.0598
1.48
1.52
B
0.1594
0.1673
4.05
4.25
G
0.1165
0.1197
2.96
3.04
C
0.0591
0.0663
1.50
1.70
H
0.0551
0.0630
1.40
1.60
D
0.0945
0.1024
2.40
2.60
I
0.0138
0.0161
0.35
0.41
E
0.0141
0.0201
0.36
0.51
Notes:
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
2
1
A
B
C
D
E
F
G
H
I
Style: Pin 1.Base 2.Collector 3.Emitter
Marking:
Date Code
7
H M
7 2
Laser Marking
3-Lead SOT-89 Plastic Surface Mounted Package
HSMC Package Code: M