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Электронный компонент: HMBT6517

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 1/3
HMBT6517
HSMC Product Specification
HMBT6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
The HMBT6517 is complementary to HMBT6520
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
C
Junction Temperature................................................................................................ +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C)............................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage ................................................................................................... 350 V
VCEO Collector to Emitter Voltage ................................................................................................ 350 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
350
-
-
V
IC=100uA
BVCEO
350
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=10uA
ICBO
-
-
50
nA
VCB=250V
IEBO
-
-
50
nA
VEB=5V
*VCE(sat)1
-
-
300
mV
IC=10mA, IB=1mA
*VCE(sat)2
-
-
350
mV
IC=20mA, IB=2mA
*VCE(sat)3
-
-
500
mV
IC=30mA, IB=3mA
*VCE(sat)4
-
-
1
V
IC=50mA, IB=5mA
VBE(on)
-
-
2
V
VCE=10V, IC=100mA
*VBE(sat)1
-
-
750
mV
IB=1mA, IC=10mA
*VBE(sat)2
-
-
850
mV
IB=2mA, IC=20mA
*VBE(sat)3
-
-
900
mV
IB=3mA, IC=30mA
*hFE1
20
-
-
VCE=10V, IC=1mA
*hFE2
30
-
-
VCE=10V, IC=10mA
*hFE3
30
-
200
VCE=10V, IC=30mA
*hFE4
20
-
200
VCE=10V, IC=50mA
*hFE5
15
-
-
VCE=10V, IC=100mA
fT
40
-
200
MHz
IC=10mA, VCE=20V, f=20MHz
Cob
-
-
6
pF
VCB=20V, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
SOT-23
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 2/3
HMBT6517
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
0.1
1
10
100
1000
Collector Current (mA)
hF
E
hFE @ V
CE
=10V
Saturation Voltage & Collector Current
10
100
1000
10000
100000
0.1
1
10
100
1000
Collector Current (mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
BE(sat)
@ I
C
=10I
B
V
CE(sat)
@ I
C
=10I
B
On Voltage & Collector Current
100
1000
10000
1
10
100
1000
Collector Current (mA)
O
n
Vo
l
t
a
g
e
(
m
V)
V
BE(on)
@ V
CE
=10V
Capacitance & Reverse-Biased Voltage
1
10
0.1
1
10
100
Reverse-Biased Voltage (V)
C
apac
i
t
a
n
c
e
(
p
F
)
Cob
Cutoff Frequency & Collector Current
10
100
1
10
100
Collector Current (mA)
C
u
to
ff F
r
e
q
u
e
n
c
y
(
M
H
z
)
V
CE
=20V
Safe Operating Area
1
10
100
1000
10000
1
10
100
1000
Forward Voltage-V
CE
(V)
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
-I
C
(m
A
)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 3/3
HMBT6517
HSMC Product Specification
SOT-23 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1102
0.1204
2.80
3.04
J
0.0034
0.0070
0.085
0.177
B
0.0472
0.0630
1.20
1.60
K
0.0128
0.0266
0.32
0.67
C
0.0335
0.0512
0.89
1.30
L
0.0335
0.0453
0.85
1.15
D
0.0118
0.0197
0.30
0.50
S
0.0830
0.1083
2.10
2.75
G
0.0669
0.0910
1.70
2.30
V
0.0098
0.0256
0.25
0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
Marking:
Rank Code
1 Z
Control Code