The GM71C(S)17803C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17803C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17803C/CL offers
Extended Data out(EDO) Page Mode as a high
speed access mode. Multiplexed address inputs
p e r m i t t h e G M 7 1 C ( S ) 1 7 8 0 3 C / C L t o b e
packaged in standard 400 mil 28 pin plastic
SOJ, and standard 400mil 28pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely
available automated testing and insertion
equipment.

Description

Features

* 2,097,152 Words x 8 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time

* Low Power
Active : 715/660/605/550mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)

Pin Configuration

2,097,152 WORDS x 8 BIT

CMOS DYNAMIC RAM

(Top View)

28 SOJ

I/O0

I/O1

I/O2

I/O3

RAS

A10

I/O7

I/O6

I/O5

I/O4

CAS

(Unit: ns)

GM71C(S)17803C/CL-5
GM71C(S)17803C/CL-6

GM71C(S)17803C/CL-7

RAC

CAC

HPC

50
60

13
15

104

20
25

124

28 TSOP II

I/O7

I/O6

I/O5

I/O4

CAS

I/O0

I/O1

I/O2

I/O3

RAS

A10

I/O7

I/O6

I/O5

I/O4

CAS

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

Pin Description

Pin

Function

Pin

Function

A0-A10

I/O0-I/O7

Address Inputs

Refresh Address Inputs

Data-In/Out

Row Address Strobe

Read/Write Enable

Power (+5V)

Ground

No Connection

Ordering Information

RAS

Column Address Strobe

Output Enable

CAS

Absolute Maximum Ratings*

1.0

Power Dissipation

Symbol

Parameter

Rating

Unit

STG

IN/

OUT

0 ~

-55 ~

125

Ambient Temperature under Bias

Storage Temperature (Plastic)

Voltage on any Pin Relative to V

Supply voltage Relative to V

Short Circuit Output Current

-1.0 ~

7.0

-1.0 ~

7.0

Type No.

Access Time

Package

GM71C(S)17803CJ/CLJ -5
GM71C(S)17803CJ/CLJ -6
GM71C(S)17803CJ/CLJ -7

50ns
60ns
70ns

400 Mil
28 Pin
Plastic SOJ

50ns
60ns
70ns

400 Mil
28 Pin
Plastic TSOP II

GM71C(S)17803CT/CLT -5
GM71C(S)17803CT/CLT -6
GM71C(S)17803CT/CLT -7

Recommended DC Operating Conditions (T

= 0 ~

70C)

Symbol

Parameter

Unit

Supply Voltage

Input High Voltage

Input Low Voltage

Max

5.5

6.0

0.8

Typ

5.0

Min

4.5

2.4

-1.0

Note: All voltage referred to Vss.

Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

DC Electrical Characteristics (V

= 5V+/-10%, Vss = 0V, T

= 0 ~ 70C)

Symbol

Parameter

Note

Output Level
Output "H" Level Voltage (I

OUT

-2mA

)

Unit

Max

0.4

Min

2.0

Output Level
Output "L" Level Voltage (I

OUT

mA)

CC1

130

Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling

min)

50ns

60ns

70ns

120

110

CC2

Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V

OUT

High-Z)

CC3

RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(t

min)

CC4

CC5

Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS

- 0.2V, D

OUT

= High-Z)

CC6

CAS-before-RAS Refresh Current
(t

min)

130

50ns

60ns

70ns

CC7

150

L(I)

-10

L(O)

-10

Input Leakage Current
Any Input (0V

6V)

Output Leakage Current
(D

OUT

is Disabled, 0V

OUT

6V)

Note: 1. I

depends on output load condition when the device is selected.

(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = V

3. Address can be changed once or less while CAS = V

4. CAS = L (

0.2V) while RAS = L (

0.2V).

5. L-version.

EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(t

HPC

= t

HPC

min)

120

110

130

50ns

60ns

70ns

120

110

130

50ns

60ns

70ns

120

110

CC8

1, 2

1, 3

Standby Current RAS = V

CAS = V

OUT

Enable

Battery Back Up Operating Current(Standby with CBR Refresh)
(CBR refresh, t

=62.5us

RAS

0.3

us,

OUT

High-Z ,CMOS interface)

500

4,5

CC9

Self-Refresh Mode Current
(RAS, CAS<=0.2V

OUT

High-Z)

300

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

Capacitance (V

= 5V+/-10%, T

= 25C)

Symbol

Parameter

Note

I/O

Input Capacitance (Address)

Input Capacitance (Clocks)

Output Capacitance (Data-In/Out)

1, 2

Unit

Max

Min

Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V

to disable D

OUT

AC Characteristics (V

= 5V+/-10%, T

= 0 ~

70C, Vss = 0V Note 1, 2, 18)

Test Conditions

Input rise and fall times : 2 ns

Output timing reference levels : 0.8V, 2.0V

Input timing reference levels : 0.8V, 2.4V Output load : 1TTL gate + C

(100 pF)

(Including scope and jig)

Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

Random Read or Write Cycle Time

104

124

RAS Precharge Time

RAS

RAS Pulse Width

10,000

CAS

CAS Pulse Width

10,000

ASR

Row Address Set up Time

RAH

Row Address Hold Time

ASC

Column Address Set-up Time

CAH

Column Address Hold Time

RCD

RAS to CAS Delay Time

RAD

RAS to Column Address Delay Time

RSH

RAS Hold Time

CSH

CAS Hold Time

CRP

CAS to RAS Precharge Time

Transition Time (Rise and Fall)

DZO

OE Delay Time from D

DZC

CAS Delay Time from D

GM71C(S)17803
C/CL-5

OE to D

Delay Time

CAS Precharge Time

ODD

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

Read Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

RAC

Access Time from RAS

CAC

Access Time from CAS

Access Time from Address

RCS

Read Command Setup Time

RCH

Read Command Hold Time to CAS

8,9

9,10,17

9,11,17

Access Time from OE

GM71C(S)17803
C/CL-6

OAC

GM71C(S)17803
C/CL-7

RRH

Read Command Hold Time to RAS

RAL

Column Address to RAS Lead Time

OFF

Output Buffer Turn-off Time

CAL

Column Address to CAS Lead Time

CLZ

CAS to Output in Low-Z

OEZ

Output Buffer Turn-off Time to OE

Output Data Hold Time

OHO

Output Data Hold Time from OE

CDD

CAS to D

Delay Time

RCHR

OHR

OFR

WEZ

WDD

RDD

Read Command Hold Time from RAS

Output Data hold Time from RAS

Output Buffer turn off to RAS

Output Buffer turn off to WE

WE to D

Delay Time

RAS to D

Delay Time

Max

Min

GM71C(S)17803
C/CL-5

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

Write Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

WCS

WCH

RWL

CWL

Write Command Setup Time

Write Command Hold Time

Write Command Pulse Width

Write Command to RAS Lead Time

Write Command to CAS Lead Time

Data-in Setup Time

Data-in Hold Time

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

Min

Max

GM71C(S)17803
C/CL-5

Read- Modify-Write Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

RWC

136

161

RWD

CWD

AWD

OEH

Read-Modify-Write Cycle Time

RAS to WE Delay Time

CAS to WE Delay Time

Column Address to WE Delay Time

OE Hold Time from WE

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

Min

111

Max

GM71C(S)17803
C/CL-5

Refresh Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

CSR

CHR

RPC

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

WRP

WRH

CAS Setup Time
(CAS-before-RAS Refresh Cycle)

CAS Hold Time
(CAS-before-RAS Refresh Cycle)

RAS Precharge to CAS Hold Time

WE Setup Time
(CAS-before-RAS Refresh Cycle)

WE Hold Time
(CAS-before-RAS Refresh Cycle)

Min

GM71C(S)17803
C/CL-5

Max

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

9,17

100,000

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

EDO Page Mode Cycle

Min

GM71C(S)17803
C/CL-5

Max

100,000

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

EDO Page Mode RAS Pulse Width

EDO Page Mode Cycle Time

Output data Hold Time from CAS low

Read command Hold Time
from CAS Precharge

CAS Hold Time referred OE

CAS to OE Setup Time

EDO Page Mode Read-Modify-Write Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

EDO Page Mode Read-Modify-Write
Cycle Time

WE Delay Time from CAS Precharge

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

Refresh

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

HPC

RASP

ACP

RHCP

DOH

COL

COP

RCHP

HPRWC

CPW

REF

Refresh period

Refresh period (L -Series)

128

GM71C(S)17803
C/CL-6

GM71C(S)17803
C/CL-7

2048

cycles

2048

cycles

Max

Min

GM71C(S)17803
C/CL-5

Max

Min

128

GM71C(S)17803
C/CL-5

Self Refresh Mode ( L-version )

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

GM71CS17803
CL-5

RASS

100

�

RPS

110

130

CHS

-50

RAS Pulse Width ( Self-refresh )

RAS Precharge Time ( Self-refresh )

CAS Hold Time ( Self-refresh )

Min

100

-50

Max

GM71CS17803
CL-5

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

AC Measurements assume t

= 2

An initial pause of 200us is required after power up followed by a minimum of eight
initialization cycles (any combination of cycles containing RAS only refresh or CAS-before-
RAS refresh). If the internal refresh counter is used, a minimum of eight CAS-before-RAS
refresh cycles are required.

Operation with the t

RCD

(max) limit insures that t

RAC

(max) can be met, t

RCD

(max) is specified as a

reference point only; if t

RCD

is greater than the specified t

RCD

(max) limit, then access time is

controlled exclusively by t

CAC

Operation with the t

RAD

(max) limit insures that t

RAC

(max) can be met, t

RAD

(max) is specified as a

reference point only; if t

RAD

is greater than the specified t

RAD

(max) limit, then access time is

controlled exclusively by t

Either t

ODD

or t

CDD

must be satisfied.

Either t

DZO

or t

DZC

must be satisfied.

(min) and V

(max) are reference levels for measuring timing of input signals. Also,

transition times are measured between V

(min) and V

(max).

Assumes that t

RCD

<= t

RCD

(max) and t

RAD

<= t

RAD

(max). If t

RCD

or t

RAD

is greater than the

maximum recommended value shown in this table, t

RAC

exceeds the value shown.

Measured with a load circuit equivalent to 1TTL loads and 100pF.

Assumes that t

RCD

>= t

RCD

(max) and t

RAD

<= t

RAD

(max).

Assumes that t

RCD

<= t

RCD

(max) and t

RAD

>= t

RAD

(max).

Either t

RCH

or t

RRH

must be satisfied for a read cycles.

OFF

(max) and t

OEZ

(max) define the time at which the outputs achieve the open circuit condition

and are not referred to output voltage levels.

WCS

, t

RWD

, t

CWD

, t

AWD

and t

CPW

are not restrictive operating parameters. They are included in the

data sheet as electrical characteristics only; if t

WCS

>=t

WCS

(min), the cycle is an early write cycle

and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if
t

RWD

>=t

RWD

(min), t

CWD

>=t

CWD

(min) and t

AWD

>=t

AWD

(min), or t

CWD

>=t

CWD

(min), t

AWD

>=t

AWD

(min)

and t

CPW

>=t

CPW

(min), the cycle is a read modify write and the data output will contain data read

from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the
data out (at access time) is indeterminate.

These parameters are referred to CAS leading edge in early write cycle and to WE leading edge
in a delayed write or a read modify write cycle.

RASP

defines RAS pulse width in EDO page mode cycles.

Access time is determined by the longest among t

, t

CAC

and t

ACP

In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying
data to the device. After RAS is reset, if t

OEH

>=t

CWL

, the I/O pin will remain open circuit (high

impedance): if t

OEH

<=t

CWL

, invalid data will be out at each I/O.

HPC

(min ) can be achieved during a series of EDO page mode write cycles or EDO page

mode read cycles. If both write and read operation are mixed in a EDO page mode RAS cycle
(EDO page mode mix cycle (1)(2) ),minimum value of CAS cycle

(

CAS

+ 2

)

becomes

greater than the specified

HPC

(min) value.

The value of CAS cycle time of mixed EDO page

mode is shown in EDO page mode mix cycle(1) and (2).

Notes:

10.

11.

12.

13.

14.

15.

16.
17.

18.

19.

GM71C17803C

GM71CS17803CL

Rev 0.1 / Apr'01

Package Dimensions

Unit: Inches (mm)

28 SOJ

28 TSOP (TYPE II)

0.405(10.29)

MAX

0.394(10.03)

MIN

0.455(11.56)

MIN

0.471(11.96)

MAX

0.730(18.54) MAX

0.720(18.28) MIN

0.020(0.50) MAX

0.012(0.30) MIN

TYP

0.050(1.27)

0.007(0.18) MAX

0.003(0.08) MIN

0.047(1.20)

MAX

0.041(1.05) MAX

0.037(0.95) MIN

0.024(0.60) MAX

0.016(0.40) MIN

0.008(0.21) MAX

0.004(0.12) MIN

0 ~ 5

0.395(10.03)

MIN

0.435(11.06)

MIN

0.445(11.30)

MAX

0.366(9.30)

MIN

0.375(9.55)

MAX

0.025(0.64)

MIN

0.405(10.29)

MAX

0.032(0.81) MAX

0.026(0.66) MIN

TYP

0.050(1.27)

0.020(0.50) MAX

0.015(0.38) MIN

0.148(3.75) MAX

0.128(3.25) MIN

0.710(18.04) MIN

0.720(18.30) MAX

0.083(2.10)

MIN

Электронный компонент: GM71CS17803CT/CLT-7