iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
FEATURES
APPLICATIONS
Laser diode driver of up to 250mA
Averaging control of laser power
Protective functions to prevent destruction of laser diode
Laser-current monitor with current or voltage output
Integrated oscillator for quartz, RC or resonator attachment
up to 4MHz
Integrated 16:1 divider for transmit pulse generation in the
kHz range
Stable 1:1 pulse duty ratio
Simple adjustment of the laser power via external resistor
Smooth starting after power-on
Complementary pulse repetition frequency output for ECL
level
Shutdown in case of overtemperature
Single 5V power supply
Very few external components
iC-VJ for laser diodes with 50..500
A monitor current
iC-VJZ for laser diodes with 0.15..1.5mA monitor current
Transmitter for laser light
barriers from 1 to 200kHz
PACKAGES
iC-VJ, iC-VJZ
SO16N
BLOCK DIAGRAM
DC-Monitor
5V
Sync
6
5
3
2
4
7
1
Q
NQ
NQ
OUTPUT
MONITOR
REFERENCE
DIVIDER
TH-SHUTDOWN
POWER ON
OSCILLATOR
DRIVER STAGE
16:1
R1
800
C1
100pF
RSET
10k
R3
10k
C2
100nF..470nF
C3
100nF
C4
100
F
KLD
PRF
AGND
GND
VCC
RC
AMD
MI
ISET
MO
CI
R
QZ
NPRF
usable LD models
MD LD
iC-VJ/VJZ
12
3
2
1
14
15
5
6
n.c.
11
9
4
13
7
1:1 iC-VJ
1:3 iC-VJZ
1997
Rev A0
iC-Haus GmbH
Tel
+49-6135-9292-0
Integrated Circuits
Fax +49-6135-9292-192
Am Kuemmerling 18, D-55294 Bodenheim
http://www.ichaus.com
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A0, Page 2/10
DESCRIPTION
The devices iC-VJ and iC-VJZ are control ICs for laser diodes. Control to the average of the laser current
and integrated protective functions ensure nondestructive operation of the sensitive semiconductor laser.
All required functions for the pulse operation of a CW laser are integrated: a power driver and monitor
amplifier for direct connection of the laser diode, an oscillator for pulse repetition frequency generation, a
start-up and temperature protector as well as monitor and pulse repetition frequency outputs for synchro-
nous control of a receiver circuit.
The laser power regulation is adapted to the laser diode used with an external resistor at ISET. The
capacitor at CI determines the control time constants.
The oscillator operates with an external RC circuit in the range from about 10kHz to 4MHz. The generated
pulse duty factor is a stable 1:1; the oscillator frequency is reduced to 1/16th by the integrated divider. A
different IC model permits the oscillator to be wired with ceramic resonator or quartz, for example with a
3.2MHz quartz to generate a pulse repetition frequency of 200kHz.
An image of the laser diode current is output via MI. The MI connection is designed for the circuit with a
low pass and then forms a voltage proportional to the average laser current. This voltage is output to MO
via the integrated voltage follower and is thus available for any applications. The Outputs PRF and NPRF
supply the pulse repetition frequency complementarily to analog levels (VCC/2
0.75 Vpk) to be able to
activate high-speed ECL logic of a receiver circuit.
The IC contains protective diodes against ESD destruction, a thermal shutdown, plus a start-up circuit for
the laser diode driver to protect the laser diode when the supply voltage is switched on.
PACKAGES SO16N to JEDEC Standard
PIN CONFIGURATION SO16N
PIN FUNCTIONS
(top view)
No. Name Function
1
AMD
Anode Monitor Diode
2
KLD
Cathode Laser Diode
3
GND
Ground
4
MI
Monitor Current Output
5
R
Oscillator Resistor
(Optional: Terminal for Crystal Oscil-
lator or Ceramic Resonator)
6
RC
Oscillator Capacitor
7
AGND Analog Ground
8
n.c.
9
CI
Capacitor Attachment
10
n.c.
11
ISET
Set-up Resistor for the
Laser Diode Power
12
VCC
5V Supply Voltage
13
MO
Monitor Voltage Output
14
PRF
Pulse Repetition Frequency Output
15
NPRF Inverted PRF
16
n.c.
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A0, Page 3/10
ABSOLUTE MAXIMUM RATINGS
Values beyond which damage may occur; device operation is not guaranteed.
Item
Symbol
Parameter
Conditions
Fig.
Unit
Min.
Max.
G001 VCC
Supply Voltage
0
6
V
G002 I(AGND)
Current in AGND
-4
4
mA
G003 I(CI)
Current in CI
-4
4
mA
G101 V(KLD)
Voltage at KLD
PRF= lo
0
6
V
G102 I(KLD)
Current in KLD
PRF= hi
-4
600
mA
G103 I(AMD)
Current in AMD
-4
4
mA
G201 I(PRF)
Current in PRF
-10
2
mA
G202 I(NPRF)
Current in NPRF
-10
2
mA
G301 I(R,RC)
Current in R, RC
-2
2
mA
G302 I(QZ)
Current in QZ
only for devices with pin QZ
-2
2
mA
G501 I(ISET)
Current at ISET
-2
2
mA
G701 I(MI)
Current in MI
-2
2
mA
G702 I(MO)
Current in MO
-2
2
mA
TG1 Tj
Junction Temperature
-40
150
C
TG2 Ts
Storage Temperature
-40
150
C
iC-VJZ with a monitor current range of 0.15..1.5mA
Max. ratings for iC-VJ are valid with the following replacements:
G103 I(AMD)
Current in AMD
-6
6
mA
THERMAL DATA
Operating Conditions: VCC= 5V
10%
Item
Symbol
Parameter
Conditions
Fig.
Unit
Min.
Typ.
Max.
T1
Ta
Operating Ambient Temperature
Range
(extended temperature range on
request)
-25
90
C
T2
Rthja
Thermal Resistance
Chip to Ambient
soldered on PCB, without special
cooling
140
K/W
All voltages are referenced to ground unless otherwise noted.
All currents into the device pins are positive; all currents out of the device pins are negative.
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A0, Page 4/10
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC= 5V
10%, RSET= 5..50k
,iC-VJ: I(AMD)= 50..500
A,
iC-VJZ: I(AMD)= 0.15..1.5mA; Tj= -25..125
C, unless otherwise noted.
Item
Symbol
Parameter
Conditions
Tj
Fig.
Unit
C
Min.
Typ.
Max.
Total Device
001
VCC
Permissible Supply Voltage
Range at VCC
4.5
5.5
V
002
Iav(VCC) Supply Current in VCC
(average value)
Iav(KLD)= 100mA,
fosc= 3.2MHz
20%,
I(PRF, NPRF)= 0
50
mA
003
tp(KLD-
PRF)
Pulse Edge Delay
I(KLD) to V(PRF)
PRF(hi
lo), I(50%):V(50%)
-70
70
ns
004
tp(KLD-
NPRF)
Pulse Edge Delay
I(KLD) to V(NPRF)
NPRF(hi
lo), I(50%):V(50%)
-70
70
ns
Driver Stage KLD, AMD
101
Vs(KLD)
Saturation Voltage at KLD
PRF= hi, I(KLD)= 200mA
1.5
V
102
I0(KLD)
Leakage Current in KLD
PRF= lo, V(KLD)= VCC
10
A
103
I(KLD)
Current in KLD
I(AMD)= 0
250
mA
104
V(AMD)
iC-VJ: Voltage at AMD
I(AMD)= 500
A
0.5
1.5
V
105
tr
Current Rise Time in KLD
Imax(KLD)= 20..250mA,
I(KLD): 10%
90%
150
ns
106
tf
Current Fall Time in KLD
Imax(KLD)= 20..250mA,
I(KLD): 90%
10%
150
ns
107
CR1()av
iC-VJ: Mean Value for Current
Ratio I(AMD) / I(ISET)
I(CI)= 0,
closed control loop
0.8
1
1.2
108
CR2()
iC-VJ: Current Ratio
I(AMD) / I(CI)
V(CI)= 1..3.5V,
ISET open
0.9
1
1.1
Output PRF, NPRF
201
Vav()
Average Value of Output Voltage I(PRF,NPRF)= 0..-4mA
47.5
50
52.5
%VCC
202
Vpk()
Amplitude
I(PRF,NPRF)= 0..-4mA
625
750
875
mV
203
tpp()
Pulse/Pause Ratio
0.95
1.0
1.05
204
j()
Jitter
VCC, fosc = const.
20
ns
205
tr()
Rise Time
CL()= 50pF, V(): 10%
90%
150
ns
206
tf()
Fall Time
CL()= 50pF, V(): 90%
10%
150
ns
Oscillator R, RC (Option: QZ)
301
fosc
Oscillator Frequency
R1= 800
, C1= 100pF
2.64
2.9
3.19
MHz
302
fosc/f0
Frequency Drift
R
C= constant
0.85
1
1.15
303
fosc(QZ) Oscillator Frequency with Crystal
Oscillator
Device with Pin QZ:
3.2MHz Quarz at QZ
2.88
3.2
3.52
MHz
Divider
401
Div
Division Factor fosc/PRF
16
Reference ISET
501
V(ISET)
Reference Voltage
27
1.20
1.22
1.27
V
V
502
CR()
Current Ratio I(CI) / I(ISET)
V(CI)= 1..3.5V, I(AMD)= 0
0.9
1.0
1.1
503
RSET
Permissible Resistor at ISET to
AGND (Control Set-up Range)
2.7
50
k
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A0, Page 5/10
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC= 5V
10%, RSET= 5..50k
,iC-VJ: I(AMD)= 50..500
A,
iC-VJZ: I(AMD)= 0.15..1.5mA; Tj= -25..125
C, unless otherwise noted.
Item
Symbol
Parameter
Conditions
Tj
Fig.
Unit
C
Min.
Typ.
Max.
Power-on and Thermal Shutdown
601
VCCon
Turn-on Threshold VCC
3.0
4.1
V
602
VCChys
Hysteresis
300
450
mV
603
Toff
Thermal Shutdown Threshold
125
150
C
604
Thys
Thermal Shutdown Hysteresis
10
C
605
Vs(CI)lo
Saturation Voltage lo at CI in
case of undervoltage
VCC= 0..VCCon-VCChys,
I(CI)= 300
A
1.5
V
606
Vs(CI)hi
iC-VJ: Saturation Voltage hi at CI Vs(CI)hi= VCC-V(CI);
RSET= 25k
, I(AMD)= 30
A
0.3
V
Monitor Outputs MI, MO
701
Iav(MI)
Current in MI (Average Value)
R(MI)=10k
,C(MI)=100nF
Iav(KLD)= 10..50mA
0.15
0.19
0.23
%I
(KLD)
702
Iav(MI)
Current in MI (Average Value)
R(MI)=10k
,C(MI)=100nF
Iav(KLD)= 50..125mA
0.12
0.19
0.26
%I
(KLD)
703
I0(MI)
Leakage Current in MI
PRF= lo, V(MI)= 0V
3
A
704
Vos
(MO-MI)
Offset Voltage V(MO-MI)
V(MI)= 0.2..3.5V,
R(MO)= 5k
-30
30
mV
iC-VJZ with a monitor current range of 0.15..1.5mA
Characteristics for iC-VJ are valid with the following replacements:
104
V(AMD)
Voltage at AMD
I(AMD)= 1.5mA
0.5
1.5
V
107
CR1()av
Mean Value for Current Ratio
I(AMD) / I(ISET)
I(CI)= 0,
closed control loop
2.4
3
3.6
108
CR2()
Current Ratio
I(AMD) / I(CI)
V(CI)= 1..3.5V,
ISET open
2.7
3
3.3
606
Vs(CI)hi
Saturation Voltage hi at CI
Vs(CI)hi= VCC-V(CI);
RSET= 25k
, I(AMD)= 90
A
0.3
V
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