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P/N:PM1143
REV. 0.02, MAR. 23, 2005
MX29LV033M
32M-BIT SINGLE VOLTAGE 3V ONLY
UNIFORM SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
Configuration
- 4,194,304 x 8 byte structure
Sector structure
- 64KB x 64
Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
Secured Silicon Sector
- Provides a 256-byte OTP area for permanent, secure
identification
- Can be programmed and locked at factory or by cus-
tomer
Latch-up protected to 250mA from -1V to VCC + 1V
Low VCC write inhibit is equal to or less than 1.5V
Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
PERFORMANCE
High Performance
- Fast access time: 70R/90ns
- Page read time: 25ns
- Sector erase time: 0.5s (typ.)
- Effective write buffer byte programming time: 11us
- 8 byte page read buffer
- 32 byte write buffer: reduces programming time for
multiple-byte updates
Low Power Consumption
- Active read current: 18mA(typ.)
- Active write current: 50mA(typ.)
- Standby current: 20uA(typ.)
Minimum 100,000 erase/program cycle
20-year data retention
SOFTWARE FEATURES
Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
Program Suspend/Program Resume
- Suspend program operation to read other sectors
Erase Suspend/Erase Resume
- Suspends sector erase operation to read or program
other sectors
Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
ACC input
- ACC (high voltage) accelerates programming time
for higher throughput during system
PACKAGE
40-pin TSOP
GENERAL DESCRIPTION
The MX29LV033M is a 32-mega bit Flash memory orga-
nized as 4M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV033M is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV033M offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV033M has separate chip enable (CE#) and
PRELIMINARY
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MX29LV033M
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV033M uses a command register to manage this
functionality.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and programming operations produces reliable
cycling. The MX29LV033M uses a 2.7V to 3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
AUTOMATIC PROGRAMMING
The MX29LV033M is byte/page programmable using the
Automatic Programming algorithm. The Automatic Pro-
gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to DATA# polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm. The
Automatic Erase algorithm automatically programs the
entire array prior to electrical erase. The timing and veri-
fication of electrical erase are controlled internally within
the device.
AUTOMATIC SECTOR ERASE
The MX29LV033M is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically programs
the specified sector(s) prior to electrical erase. The tim-
ing and verification of electrical erase are controlled inter-
nally within the device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29LV033M elec-
trically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
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MX29LV033M
PIN CONFIGURATION
40 TSOP
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RESET#
ACC
RY/BY#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A17
VSS
A20
A19
A10
Q7
Q6
Q5
Q4
VCC
VCC
A21
Q3
Q2
Q1
Q0
OE#
VSS
CE#
A0
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
MX29LV033M
LOGIC SYMBOL
8
Q0-Q7
RY/BY#
A0-A21
ACC
CE#
OE#
WE#
RESET#
22
SYMBOL
PIN NAME
A0~A21
Address Input
Q0~Q7
8 Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
RESET#
Hardware Reset Pin, Active Low
RY/BY#
Read/Busy Output
VCC
+3.3V single power supply
ACC
Hardware Acceleration Pin
VSS
Device Ground
NC
Pin Not Connected Internally
PIN DESCRIPTION
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