1
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
JULY 2000
2000 Integrated Device Technology, Inc.
DSC-5837/1
c
IDT49FCT806/A
COMMERCIAL TEMPERATURE RANGE
FAST CMOS
BUFFER/CLOCK DRIVER
FUNCTIONAL BLOCK DIAGRAM
FEATURES:
0.5 MICRON CMOS Technology
Guaranteed low skew < 700ps (max.)
Low duty cycle distortion < 1ns (max.)
Low CMOS power levels
TTL compatible inputs and outputs
Rail-to-rail output voltage swing
High drive: -24mA I
OH
, +64mA I
OL
Two independent output banks with 3-state control
1:5 fanout per bank
"Heartbeat" monitor output
Available in SSOP and SOIC packages
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
DESCRIPTION:
The FCT806 is an inverting buffer/clock driver built using advanced dual
metal CMOS technology. Each bank consists of two banks of drivers. Each
bank drives five output buffers from a standard TTL compatible input. These
devices feature a "heart-beat" monitor for diagnostics and PLL driving. The
MON output is identical to all other outputs and complies with the output
specifications in this document.
The FCT806 offers low capacitance inputs and hysteresis. Rail-to-rail
output swing improves noise margin and allows easy interface with CMOS
inputs.
IN
A
IN
B
O E
B
OE
A
OA
1
-OA
5
OB
1
-OB
5
M ON
5
5
2
COMMERCIAL TEMPERATURE RANGE
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
V
CCA
OA
1
OA
2
GND
A
(1)
IN
A
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1
OA
3
OA
4
OA
5
OE
A
V
CC
OB
1
GND
B
MON
IN
B
OB
2
OB
3
OB
4
OB
5
OE
B
NC
NOTE:
1. Pin 8 is not internally connected on devices with a "K" prefix in the date code. On older
devices, pin 8 is internally connected to GND. To insure compatibility with all products,
pin 8 should be connected to GND at the board level.
PIN DESCRIPTION
Pin Names
Description
OE
A
, OE
B
3-State Output Enable Inputs (Active LOW)
IN
A
, IN
B
Clock Inputs
OAn, OBn
Clock Outputs
MON
Monitor Output
FUNCTION TABLE
(1)
Inputs
Outputs
OE
A
, OE
B
IN
A
, IN
B
OAn, OBn
MON
L
L
H
H
L
H
L
L
H
L
Z
H
H
H
Z
L
NOTE:
1. H = HIGH
L = LOW
Z = High-Impedance
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Max
Unit
V
TERM(2)
Terminal Voltage with Respect to GND
0.5 to +7
V
V
TERM(3)
Terminal Voltage with Respect to GND
0.5 to V
CC
+0.5
V
T
STG
Storage Temperature
65 to +150
C
I
OUT
DC Output Current
60 to +120
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Input and V
CC
terminals.
3. Output and I/O terminals.
CAPACITANCE (T
A
= +25
O
C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
4.5
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5.5
8
pF
NOTE:
1. This parameter is measured at characterization but not tested.
PIN CONFIGURATION
SOIC/ SSOP
TOP VIEW
3
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
- 0.2V
Commercial: T
A
= 0C to +70C, V
CC
= 5V 5%
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
2
--
--
V
V
IL
Input LOW Level
Guaranteed Logic LOW Level
--
--
0.8
V
I
IH
Input HIGH Current
V
CC
= Max.
V
I
= V
CC
--
--
1
A
I
IL
Input LOW Current
V
CC
= Max.
V
I
= GND
--
--
1
A
I
OZH
Off State (Hi-Z) Output Current
V
CC
= Max.
V
O
= V
CC
--
--
1
A
I
OZL
V
O
= GND
--
--
1
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= 18mA
--
0.7
1.2
V
I
OS
Short Circuit Current
V
CC
= Max., V
O
= GND
(3)
60
120
--
mA
V
CC
= 3V, V
IN
= V
LC
or V
HC
I
OH
= 32
A
V
HC
V
CC
--
V
OH
Output HIGH Voltage
V
CC
= Min.
I
OH
= 300
A
V
HC
V
CC
--
V
V
IN
= V
IH
or V
IL
I
OH
= 15mA
3.6
4.3
--
I
OH
= 24mA
2.4
3.8
--
V
CC
= 3V, V
IN
= V
LC
or V
HC
I
OL
= 300
A
--
GND
V
LC
V
OL
Output LOW Voltage
V
CC
= Min.
I
OL
= 300mA
--
GND
V
LC
V
V
IN
= V
IH
or V
IL
I
OL
= 64mA
--
0.3
0.55
V
H
Input Hysteresis for all inputs
--
--
200
--
mV
I
CC
Quiescent Power Supply Current
V
CC
= Max., V
IN
= GND or V
CC
--
5
500
A
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5V, +25C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4
COMMERCIAL TEMPERATURE RANGE
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5V, +25C ambient.
3. Per TTL driven input (V
IN
= 3.4V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the I
C
formula. These limits are guaranteed but not tested.
6.
I
C
= I
QUIESCENT
+
I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input (V
I
N
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
N
O
= Number of Outputs at f
O
All currents are in milliamps and all frequencies are in megahertz.
POWER SUPPLY CHARACTERISTICS
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
I
CC
Quiescent Power Supply Current
V
CC
= Max.
--
1
2.5
mA
TTL Inputs HIGH
V
IN
= 3.4V
(3)
I
CCD
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= V
CC
--
0.15
0.2
mA/MHz
Outputs Open
V
IN
= GND
OE
A
= OE
B
= GND
50% Duty Cycle
I
C
Total Power Supply Current
(6)
V
CC
= Max.
V
IN
= V
CC
--
1.5
2.5
Outputs Open
V
IN
= GND
f
O
= 10MHz
50% Duty Cycle
V
IN
= 3.4V
--
2
3.8
OE
A
= OE
B
= V
CC
V
IN
= GND
Mon. Output Toggling
V
CC
= Max.
V
IN
= V
CC
--
4.1
6
(5)
mA
Outputs Open
V
IN
= GND
f
O
= 2.5MHz
50% Duty Cycle
V
IN
= 3.4V
--
5.1
8.5
(5)
OE
A
= OE
B
= GND
V
IN
= GND
Eleven Outputs Toggling
5
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
NOTES:
1. Propagation delay range indicated by Min. and Max. limit is due to V
CC
, operating temperature and process parameters. These propagation delay limits do not imply skew.
2. See test circuits and waveforms.
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
(1)
FCT806
FCT806A
Symbol
Parameter
Conditions
(2)
Min
.
Max
.
Min
.
Max
.
Unit
t
PLH
Propagation Delay
C
L
= 50pF
1.5
5.6
1.5
5.3
ns
t
PHL
IN
A
to OAn, IN
B
to OBn
R
L
= 500
t
R
Output Rise Time
--
1.5
--
1.5
ns
t
F
Output Fall Time
--
1.5
--
1.5
ns
t
SK(O)
Output skew: skew between outputs of all banks of
--
0.7
--
0.7
ns
same package (inputs tied together)
t
SK(P)
Pulse skew: skew between opposite transitions
--
1
--
1
ns
of same output (|t
PHL -
t
PLH
|)
t
SK(PP)
Part-to-part skew: skew between outputs of different
--
1.5
--
1.5
ns
packages at same power supply voltage,
temperature, package type and speed grade
t
PZL
Output Enable Time
1.5
8
1.5
8
ns
t
PZH
OE
A
to OAn, OE
B
to OBn
t
PLZ
Output Disable Time
1.5
7
1.5
7
ns
t
PHZ
OE
A
to OAn, OE
B
to OBn
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