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Электронный компонент: 6116LA

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2000 Integrated Device Technology, Inc.
FEBRUARY 2001
DSC-3089/03
1
Features
x
x
x
x
x
High-speed access and chip select times
Military: 20/25/35/45/55/70/90/120/150ns (max.)
Industrial: 20/25/35/45ns (max.)
Commercial: 15/20/25/35/45ns (max.)
x
x
x
x
x
Low-power consumption
x
x
x
x
x
Battery backup operation
2V data retention voltage (LA version only)
x
x
x
x
x
Produced with advanced CMOS high-performance
technology
x
x
x
x
x
CMOS process virtually eliminates alpha particle soft-error
rates
x
x
x
x
x
Input and output directly TTL-compatible
x
x
x
x
x
Static operation: no clocks or refresh required
x
x
x
x
x
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
x
x
x
x
x
Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When
CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as
CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1W to 4W operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
Functional Block Diagram
CS
A
0
A
10
I/O
0
I/O
7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings
(1)
Truth Table
(1)
Pin Description
Capacitance
(T
A
= +25C, f = 1.0 MH
Z
)
DIP/SOIC/SOJ
Top View
3089 drw 02
5
6
7
8
9
10
11
12
GND
1
2
3
4
24
23
22
21
20
19
18
17
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
V
CC
A
9
WE
A
10
I/O
5
I/O
4
OE
16
15
14
13
A
7
A
6
I/O
7
I/O
6
CS
A
8
I/O
2
I/O
3
,
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
8
pF
3089 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed V
CC
+0.5V.
Symbol
Rating
Com'l.
Mil.
Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
A
Operating
Temperature
0 to +70
-55 to +125
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
T
STG
Storage Temperature
-55 to +125
-65 to +150
o
C
P
T
Power Dissipation
1.0
1.0
W
I
OUT
DC Output Current
50
50
mA
3089 tbl 04
Name
Description
A
0
- A
10
Address Inputs
I/O
0
- I/O
7
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
V
CC
Power
GND
Ground
3089 tbl 01
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care.
Mode
CS
OE
WE
I/O
Standby
H
X
X
High-Z
Read
L
L
H
DATA
OUT
Read
L
H
H
High-Z
Write
L
X
L
DATA
IN
3089 tbl 02
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges
3
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, only address inputs are cycling at f
MAX,
f = 0 means address inputs are not changing.
DC Electrical Characteristics
(1)
(V
CC
= 5.0V 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
DC Electrical Characteristics
(V
CC
= 5.0V 10%)
Recommended Operating
Temperature and Supply Voltage
Recommended DC
Operating Conditions
NOTES:
1. V
IL
(min.) = 3.0V for pulse width less than 20ns, once per cycle.
2. V
IN
must not exceed V
CC
+0.5V.
Grade
Ambient
Temperature
GND
Vcc
Military
-55
O
C to +125
O
C
0V
5.0V 10%
Industrial
-45
O
C to +85
O
C
0V
5.0V 10%
Commercial
0
O
C to +70
O
C
0V
5.0V 10%
3089 tbl 05
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
(2)
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
3.5
V
CC
+0.5
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
3089 tbl 06
Symbol
Parameter
Test Conditions
IDT6116SA
IDT6116LA
Unit
Min.
Max.
Min.
Max.
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM'L.
____
____
10
5
____
____
5
2
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM'L.
____
____
10
5
____
____
5
2
A
V
OL
Output Low Voltage
I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA, V
CC
= Min.
2.4
____
2.4
____
V
3089 tbl 07
Symbol
Parameter
Power
6116SA15
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35
6116LA35
Unit
Com'l
Only
Com'l
& Ind
Mil
Com'l
& Ind
Mil
Com'l.
& Ind.
Mil
I
CC1
Operating Power Supply Current
CS < V
IL
, Outputs Open
V
CC
= Max., f
=
0
SA
105
105
130
80
90
80
90
mA
LA
95
95
120
75
85
75
85
I
CC2
Dynamic Operating Current
CS < V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
150
130
150
120
135
100
115
mA
LA
140
120
140
110
125
95
105
I
SB
Standby Power Supply Current
(TTL Level)
CS > V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
40
40
50
40
45
25
35
mA
LA
35
35
45
35
40
25
30
I
SB1
Full Standby Power Supply Current
(CMOS Level)
CS > V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA
2
2
10
2
10
2
10
mA
LA
0.1
0.1
0.9
0.1
0.9
0.1
0.9
3089 tbl 08
4
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges
NOTES:
1. T
A
= + 25C
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics
(1)
(continued)
(V
CC
= 5.0V 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, only address inputs are toggling at f
MAX
, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (V
LC
= 0.2V, V
HC
= V
CC
0.2V)
Symbol
Parameter
Power
6116SA45
6116LA45
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90
6116LA90
6116SA120
6116LA120
6116SA150
6116LA150
Unit
Com'l
& Ind
Mil
Mil Only
Mil Only
Mil Only
Mil Only
Mil Only
I
CC1
Operating Power Supply
Current,
CS < V
IL
,
Outputs Open
V
CC
= Max., f
=
0
SA
80
90
90
90
90
90
90
mA
LA
75
85
85
85
85
85
85
I
CC2
Dynamic Operating
Current,
CS < V
IL
,
Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
100
100
100
100
100
100
90
mA
LA
90
95
90
90
85
85
85
I
SB
Standby Power Supply
Current (TTL Level)
CS > V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
25
25
25
25
25
25
25
mA
LA
20
20
20
20
25
15
15
I
SB1
Full Standby Power
Supply Current (CMOS
Level),
CS > V
HC
,
V
CC
= Max., V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA
2
10
10
10
10
10
10
mA
LA
0.1
0.9
0.9
0.9
0.9
0.9
0.9
3089 tbl 09
Typ.
(1)
V
CC
@
Max.
V
CC
@
Symbol
Parameter
Test Condition
Min.
2.0V
3.0V
2.0V
3.0V
Unit
V
DR
V
CC
for Data Retention
____
2.0
____
____
____
____
V
I
CCDR
Data Retention Current
MIL.
COM'L.
____
____
0.5
0.5
1.5
1.5
200
20
300
30
A
t
CDR
(3)
Chip Deselect to Data
Retention Time
CS > V
HC
V
IN
> V
HC
or < V
LC
____
0
____
____
____
ns
t
R
(3)
Operation Recovery Time
t
RC
(2)
____
____
____
____
ns
I
I
LI
I
Input Leakage Current
____
____
____
2
2
A
3089 tbl 10
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges
5
Low V
CC
Data Retention Waveform
AC Test Conditions
DATA RETENTION MODE
V
CC
CS
t
CDR
4.5V
V
DR
2V
V
DR
4.5V
t
R
V
IH
V
IH
3089 drw 03
,
Figure 2. AC Test Load
(for t
OLZ
, t
CLZ
, t
OHZ
, t
WHZ
, t
CHZ
& t
OW
)
Figure 1. AC Test Load
*Including scope and jig.
3089 drw 04
30pF*
255
5V
DATA
OUT
480
,
5pF*
255
5V
480
DATA
OUT
3089 drw 05
,
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
3089 tbl 11