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Электронный компонент: 70V27

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2000 Integrated Device Technology, Inc.
6.01
1
JANUARY 2001
DSC 3603/7
Features:
x
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
x
High-speed access
Industrial: 35ns (max.)
Commercial: 15/20/25/35/55ns (max.)
x
Low-power operation
IDT70V27S
Active: 500mW (typ.)
Standby: 3.3mW (typ.)
IDT70V27L
Active: 500mW (typ.)
Standby: 660
W (typ.)
x
Separate upper-byte and lower-byte control for bus
matching capability
x
Dual chip enables allow for depth expansion without
external logic
IDT70V27S/L
x
IDT70V27 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
x
M/
S = V
IH
for
BUSY output flag on Master,
M/
S = V
IL
for
BUSY input on Slave
x
Busy and Interrupt Flags
x
On-chip port arbitration logic
x
Full on-chip hardware support of semaphore signaling
between ports
x
Fully asynchronous operation from either port
x
LVTTL-compatible, single 3.3V (0.3V) power supply
x
Available in 100-pin Thin Quad Flatpack (TQFP), 108-pin
Ceramic Pin Grid Array (PGA), and 144-pin Fine Pitch BGA
(fpBGA)
x
Industrial temperature range (-40C to +85C) is available
for selected speeds
I/O
Control
Address
Decoder
32Kx16
MEMORY
ARRAY
70V27
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0L
OE
L
R/
W
L
A
14L
A
0L
A
14L
A
0L
SEM
L
INT
L
(2)
BUSY
L
(1,2)
LB
L
CE
0L
OE
L
UB
L
I/O
Control
Address
Decoder
CE
0R
OE
R
R/
W
R
A
14R
A
0R
A
14R
A
0R
SEM
R
INT
R
(2)
BUSY
R
(1,2)
LB
R
R/
W
R
OE
R
UB
R
M/
S
(2)
CE
1L
CE
0R
CE
1R
3603 drw 01
I/O
0-7L
CE
1R
CE
1L
I/O
8-15L
I/O
0-7R
I/O
8-15R
R/
W
L
NOTES:
1)
BUSY is an input as a Slave (M/S=V
IL
) and an output as a Master (M/
S=V
IH
).
2)
BUSY and INT are non-tri-state totem-pole outputs (push-pull).
HIGH-SPEED 3.3V
32K x 16 DUAL-PORT
STATIC RAM
Functional Block Diagram
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
2
Description:
The IDT70V27 is a high-speed 32K x 16 Dual-Port Static RAM,
designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a
combination MASTER/SLAVE Dual-Port RAM for 32-bit and wider word
systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-
bit or wider memory system applications results in full-speed, error-free
operation without the need for additional discrete logic.
The device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by the chip enables (
CE
0
and
CE
1
) permits the on-chip
circuitry of each port to enter a very low standby power mode.
Fabricated using IDT's CMOS high-performance technology,
these devices typically operate on only 500mW of power. The IDT70V27
is packaged in a 100-pin Thin Quad Flatpack (TQFP), a 108-pin ceramic
Pin Grid Array (PGA), and a 144-pin Fine Pitch BGA (fp BGA).
Pin Configurations
(1,2,3)
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
INDEX
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
IDT70V27PF
PN100-1
(4)
100-PIN TQFP
TOP VIEW
(5)
GND
OE
R
R/
W
R
SEM
R
CE
1R
CE
0R
NC
NC
GND
A
12R
A
13R
A
11R
A
10R
A
9R
A
14R
NC
I/O
10R
I/O
11R
I/O
12R
I/O
13R
I/O
14R
I/O
15R
GND
UB
R
LB
R
3603 drw 02
I/O
15L
GND
OE
L
R/
W
L
SEM
L
CE
1L
CE
0L
Vcc
NC
A
14L
A
13L
NC
NC
A
12L
A
11L
A
10L
A
9L
I/O
10L
I/O
11L
I/O
12L
I/O
13L
I/O
14L
UB
L
LB
L
GND
I
/
O
5
R
I
/
O
4
R
I
/
O
3
R
I
/
O
2
R
I
/
O
0
R
I
/
O
0
L
G
N
D
I
/
O
2
L
I
/
O
4
L
I
/
O
5
L
I
/
O
6
L
I
/
O
7
L
I
/
O
3
L
I
/
O
1
R
I
/
O
7
R
N
C
I
/
O
8
R
I
/
O
9
R
I
/
O
8
L
I
/
O
9
L
I
/
O
6
R
A
7
R
A
8
L
A
7
L
A
6
R
A
5
R
A
4
R
A
3
R
A
2
R
A
1
R
A
0
R
I
N
T
R
B
U
S
Y
R
M
/
S
B
U
S
Y
L
I
N
T
L
N
C
A
0
L
A
2
L
A
3
L
A
5
L
A
6
L
A
1
L
A
4
L
A
8
R
G
N
D
V
c
c
I
/
O
1
L
V
c
c
G
N
D
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
3
Pin Configurations
(1,2,3)
(con't.)
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 12mm x 12mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
3603 drw 02a
IDT70V27BF
BF144-1
(4)
144-Pin fpBGA
Top View
(5)
M/
S
BUSY
L
A
2L
A
4L
A
7L
NC
NC
A
11L
I/O
3R
V
CC
I/O
2R
GND
I/O
0R
GND
I/O
0L
I/O
3L
NC
I/O
6L
I/O
5L
V
CC
NC
NC
NC
NC
LB
R
CE
0R
SEM
R
GND
I/O
14R
GND
NC
GND
R/
W
R
OE
R
I/O1
5R
I/O
12R
NC
GND
CE
1R
NC
I/O
10R
NC
NC
NC
A
12L
A
13L
NC
NC
UB
L
CE
0L
V
CC
V
CC
NC
R/
W
L
CE
1L
I/O
15L
NC
NC
NC
OE
L
I/O
14L
NC
A
9L
I/O
10L
I/0
13L
A
6L
NC
NC
I/O
11R
NC
I/O
8R
NC
I/O
6R
NC
I/O
2L
I/O
4L
I/O
5R
NC
NC
NC
I/O
4R
I/O
7R
NC
UB
R
NC
NC
I/O
13R
A1
NC
A2
NC
A3
A
8L
A4
A
5L
A5
A
1L
A6
INT
L
A7
GND
A8
BUSY
R
A9
A
1R
NC
A
10L
A
14L
A10
A
5R
A11
NC
A12
NC
A13
NC
LB
L
SEM
L
V
CC
NC
GND
I/O
12L
I/O
11L
I/O
9L
NC
NC
I/O
8L
I/O
7L
NC
I/O
1L
V
CC
I/O
1R
NC
V
CC
NC
NC
NC
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
B11
B12
B13
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
E1
E2
E3
E4
E10
E11
E12
E13
F1
F2
F3
F4
F10
F11
F12
F13
G1
G2
G3
G4
G10
G11
G12
G13
H1
H2
H3
H4
H10
H11
H12
H13
J1
J2
J3
J4
J10
J11
J12
J13
K1
K2
K3
K4
K5
K6
K7
K8
K9
K10
K11
K12
K13
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
L13
M1
M2
M3
M4
M5
M6
M7
M8
M9
M10
M11
M12
M13
N1
N2
N3
N4
N5
N6
N7
N8
N9
N10
N11
N12
N13
INT
R
A
2R
A
6R
A
3L
NC
NC
NC
A
3R
A
7R
A
9R
A
10R
A
11R
A
4R
A
8R
A
12R
A
13R
A
14R
A
0R
A
0L
I/O
9R
,
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
4
Pin Configurations
(1,2,3)
(con't.)
3603 drw 03
80
77
74
72
69
68
65
63
60
83
78
76
73
70
67
64
61
59
84
56
86
87
88
90
91
92
94
95
97
96
100
99
103
101
105
104
2
1
5
4
7
8
10
12
13
17
16
21
19
25
22
28
24
32
31
34
35
37
39
40
44
43
48
46
52
49
55
51
IDT70V27G
G108-1
(4)
108-PIN PGA
TOP VIEW
(5)
A
B
C
D
E
F
G
H
J
K
L
M
81
57
54
53
82
79
75
71
66
62
58
50
33
36
38
41
42
45
47
3
6
9
11
14
15
18
20
23
29
30
26
27
85
89
93
98
102
106
107
108
12
11
10
09
08
07
06
05
04
03
02
01
INDEX
GND
OE
R
R/
W
R
SEM
R
CE
1R
CE
0R
NC
NC
GND
A
12R
A
13R
A
11R
A
10R
A
9R
GND
OE
L
R/
W
L
SEM
L
CE
1L
CE
0L
Vcc
NC
A
14L
A
13L
NC
NC
A
12L
A
11L
A
10L
A
9L
I/O
6R
I/O
5R
I/O
4R
I/O
3R
I/O
2R
I/O
0R
GND
Vcc
I/O
0L
I/O
1L
GND
I/O
2L
I/O
4L
I/O
5L
I/O
6L
I/O
7L
I/O
3L
I/O
1R
I/O
7R
NC
I/O
8R
I/O
9R
I/O
8L
I/O
9L
Vcc
A
6R
A
5R
A
4R
A
3R
A
2R
A
1R
A
0R
INT
R
BUSY
R
M/
S
BUSY
L
INT
L
NC
A
0L
GND
A
2L
A
3L
A
5L
A
6L
A
1L
A
4L
A
8R
A
7R
A
8L
A
7L
A
14R
NC
I/O
10R
I/O
11R
I/O
12R
I/O
13R
I/O
14R
I/O
15R
I/O
10L
I/O
11L
I/O
12L
I/O
13L
I/O
14L
GND
UB
R
LB
R
UB
L
LB
L
GND
NC
NC
NC
NC
NC
NC
NC
NC
I/O
15L
Left Port
Right Port
Names
CE
0L
, CE
1L
CE
0R
, CE
1R
Chip Enable
R/W
L
R/W
R
Read/Write Enable
OE
L
OE
R
Output Enable
A
0L
- A
14L
A
0R
- A
14R
Address
I/O
0L
- I/O
15L
I/O
0R
- I/O
15R
Data Input/Output
SEM
L
SEM
R
Semaphore Enable
UB
L
UB
R
Upper Byte Select
LB
L
LB
R
Lower Byte Select
INT
L
INT
R
Interrupt Flag
BUSY
L
BUSY
R
Busy Flag
M/S
Master or Slave Select
V
CC
Power
GND
Ground
3603 tbl 01
Pin Names
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 1.21in x 1.21in x .16in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
5
Truth Table II Non-Contention Read/Write Control
NOTES:
1. Chip Enable references are shown above with the actual
CE
0
and CE
1
levels,
CE is a reference only.
2. Port "A" and "B" references are located where
CE is used.
3. "H" = V
IH
and "L" = V
IL
Truth Table I Chip Enable
(1,2,3)
Truth Table III Semaphore Read/Write Control
NOTES:
1. A
0L
-- A
14L
A
0R
-- A
14R.
2. Refer to Chip Enable Truth Table.
NOTES:
1. There are eight semaphore flags written to I/O
0
and read from all the I/Os (I/O
0
-I/O
15
). These eight semaphore flags are addressed by A
0
-A
2
.
2. Refer to Chip Enable Truth Table.
CE
CE
0
CE
1
Mode
L
V
IL
V
IH
Port Selected (TTL Active)
< 0.2V
>V
CC
-0.2V
Port Selected (CMOS Active)
H
V
IH
X
Port Deselected (TTL Inactive)
X
V
IL
Port Deselected (TTL Inactive)
>V
CC
-0.2V
X
Port Deselected (CMOS Inactive)
X
<0.2V
Port Deselected (CMOS Inactive)
3603 tbl 02
Inputs
(1)
Outputs
Mode
CE
(2)
R/
W
OE
UB
LB
SEM
I/O
8-15
I/O
0-7
H
X
X
X
X
H
High-Z
High-Z
Deselected: Power-Down
X
X
X
H
H
H
High-Z
High-Z
Both Bytes Deselected
L
L
X
L
H
H
DATA
IN
High-Z
Write to Upper Byte Only
L
L
X
H
L
H
High-Z
DATA
IN
Write to Lower Byte Only
L
L
X
L
L
H
DATA
IN
DATA
IN
Write to Both Bytes
L
H
L
L
H
H
DATA
OUT
High-Z
Read Upper Byte Only
L
H
L
H
L
H
High-Z
DATA
OUT
Read Lower Byte Only
L
H
L
L
L
H
DATA
OUT
DATA
OUT
Read Both Bytes
X
X
H
X
X
X
High-Z
High-Z
Outputs Disabled
3603 tbl 03
Inputs
(1)
Outputs
Mode
CE
(2)
R/
W
OE
UB
LB
SEM
I/O
8-15
I/O
0-7
H
H
L
X
X
L
DATA
OUT
DATA
OUT
Read Data in Semaphore Flag
X
H
L
H
H
L
DATA
OUT
DATA
OUT
Read Data in Semaphore Flag
H
X
X
X
L
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
X
X
H
H
L
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
L
X
X
L
X
L
______
______
Not Allowed
L
X
X
X
L
L
______
______
Not Allowed
3603 tbl 04
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
6
Capacitance
(1)
(T
A
= +25C, f = 1.0mhz)TQFP ONLY
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 3.3V 0.3V)
NOTE:
1. At Vcc
<
2.0V, input leakages are undefined.
Maximum Operating Temperature
and Supply Voltage
(1,2)
Recommended DC Operating
Conditions
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 0.3V.
Absolute Maximum Ratings
(1)
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.3V.
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
Symbol
Rating
Commercial
& Industrial
Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +4.6
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output
Current
50
mA
3603 tbl 05
Grade
Ambient
Temperature
GND
Vcc
Commercial
0
O
C to +70
O
C
0V
3.3V
+
0.3V
Industrial
-40
O
C to +85
O
C
0V
3.3V
+
0.3V
3603 tbl 06
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
Output
Capacitance
V
OUT
= 3dV
10
pF
3603 tbl 08
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
3.0
3.3
3.6
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
____
V
CC
+0.3V
(2)
V
V
IL
Input Low Voltage
-0.3
(1)
____
0.8
V
3603 tbl 07
Symbol
Parameter
Test Conditions
70V27S
70V27L
Unit
Min.
Max.
Min.
Max.
|I
LI
|
Input Leakage Current
(1)
V
CC
= 3.6V, V
IN
= 0V to V
CC
___
10
___
5
A
|I
LO
|
Output Leakage Current
CE = V
IH
, V
OUT
= 0V to V
CC
___
10
___
5
A
V
OL
Output Low Voltage
I
OL
= 4mA
___
0.4
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
2.4
___
V
3603 tbl 09
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
7
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,6,7)
(V
CC
= 3.3V 0.3V)
NOTES:
1.
'X' in part numbers indicates power rating (S or L).
2.
V
CC
= 3.3V, T
A
= +25C, and are not production tested. I
CCDC
= 90mA (Typ.)
3.
At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC,
and using "AC Test Conditions" of input
levels of GND to 3V.
4.
f = 0 means no address or control lines change.
5.
Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Refer to Chip Enable Truth Table.
7. Industrial temperature: for other speeds, packages and powers contact your sales office.
70V27X15
Com'l Only
70V27X20
Com'l Only
70V27X25
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ.
(2)
Max.
Typ.
(2)
Max.
Typ.
(2)
Max.
Unit
I
CC
Dynamic Operating
Current
(Both Ports Active)
CE = V
IL
, Outputs Disabled
SEM = V
IH
f = f
MAX
(3)
COM'L
S
L
170
170
260
225
165
165
255
220
145
145
245
210
mA
IND'L
S
L
____
____
____
____
____
____
____
____
145
145
280
245
I
SB1
Standby Current
(Bo th Ports - TTL Level
Inputs)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
COM'L
S
L
44
44
70
60
39
39
60
50
27
27
50
40
mA
IND'L
S
L
____
____
____
____
____
____
____
____
27
27
60
50
I
SB2
Standby Current
(One Port - TTL Level
Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
COM'L
S
L
115
115
160
145
105
105
155
140
90
90
150
135
mA
IND'L
S
L
____
____
____
____
____
____
____
____
90
90
170
150
I
SB3
Full Standby Current
(Both Ports - All
CMOS Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COM'L
S
L
1.0
0.2
6
3
1.0
0.2
6
3
1.0
0.2
6
3
mA
IND'L
S
L
____
____
____
____
____
____
____
____
1.0
0.2
10
6
I
SB4
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
COM'L
S
L
115
115
155
140
105
105
150
135
90
90
145
130
mA
IND'L
S
L
____
____
____
____
____
____
____
____
90
90
170
145
3603 tbl 10a
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
8
AC Test Conditions
Figure 1. AC Output Test Load
3603 drw 04
590
30pF
435
3.3V
DATA
OUT
BUSY
INT
590
5pF*
435
3.3V
DATA
OUT
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns Max.
1.5V
1.5V
Figures 1 and 2
3603 tbl 11
Figure 2. Output Test Load
(for t
LZ
, t
HZ
, t
WZ
, t
OW
)
*Including scope and jig.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,6,7)
(V
CC
= 3.3V 0.3V)
NOTES:
1.
'X' in part numbers indicates power rating (S or L).
2.
V
CC
= 3.3V, T
A
= +25C, and are not production tested. I
CCDC
= 90mA (Typ.)
3.
At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC,
and using "AC Test Conditions" of input
levels of GND to 3V.
4.
f = 0 means no address or control lines change.
5.
Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Refer to Chip Enable Truth Table.
7. Industrial temperature: for other speeds, packages and powers contact your sales office.
70V27X35
Com'l & Ind
70V27X55
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ.
(2)
Max.
Typ.
(2)
Max.
Unit
I
CC
Dynamic Operating Current
(Both Ports Active)
CE = V
IL
, Outputs Disabled
SEM = V
IH
f = f
MAX
(3)
COM'L
S
L
135
135
235
190
125
125
225
180
mA
IND'L
S
L
135
135
270
235
125
125
260
225
I
SB1
Standby Current
(Bo th Ports - TTL Level
Inputs)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
COM'L
S
L
22
22
45
35
15
15
40
30
mA
IND'L
S
L
22
22
55
45
15
15
50
40
I
SB2
Standby Current
(One Port - TTL Level
Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
COM'L
S
L
85
85
140
125
75
75
140
125
mA
IND'L
S
L
85
85
160
140
75
75
160
140
I
SB3
Full Standby Current (Both
Ports - All CMOS Level
Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COM'L
S
L
1.0
0.2
6
3
1.0
0.2
6
3
mA
IND'L
S
L
1.0
0.2
10
6
1.0
0.2
10
6
I
SB4
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
COM'L
S
L
85
85
135
120
75
75
135
120
mA
IND'L
S
L
85
85
160
135
75
75
160
135
3603 tbl 10b
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
9
AC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(4, 6)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE = V
IL
and
SEM = V
IH
. To access semaphore,
CE= V
IH
and
SEM = V
IL
.
4. 'X' in part numbers indicates power rating (S or L).
5. Refer to Chip Enable Truth Table.
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
70V27X15
Com'l Only
70V27X20
Com'l Only
70V27X25
Com'l Only
Unit
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
READ CYCLE
t
RC
Read Cycle Time
15
____
20
____
25
____
ns
t
AA
Address Access Time
____
15
____
20
____
25
ns
t
ACE
Chip Enable Access Time
(3)
____
15
____
20
____
25
ns
t
ABE
Byte Enable Access Time
(3)
____
15
____
20
____
25
ns
t
AOE
Output Enable Access Time
____
10
____
12
____
15
ns
t
OH
Output Hold from Address Change
3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
12
____
12
____
15
ns
t
PU
Chip Enable to Power Up Time
(2,5)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2,5)
____
15
____
20
____
25
ns
t
SOP
Semaphore Flag Update Pulse (
OE or SEM)
10
____
10
____
15
____
ns
t
SAA
Semaphore Address Access Time
____
15
____
20
____
35
ns
3603 tbl 12a
70V27X35
Com'l & Ind
70V27X55
Com'l Only
Unit
Symbol
Parameter
Min.
Max.
Min.
Max.
READ CYCLE
t
RC
Read Cycle Time
35
____
55
____
ns
t
AA
Address Access Time
____
35
____
55
ns
t
ACE
Chip Enable Access Time
(3)
____
35
____
55
ns
t
ABE
Byte Enable Access Time
(3)
____
35
____
55
ns
t
AOE
Output Enable Access Time
____
20
____
30
ns
t
OH
Output Hold from Address Change
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
20
____
25
ns
t
PU
Chip Enable to Power Up Time
(2,5)
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2,5)
____
45
____
50
ns
t
SOP
Semaphore Flag Update Pulse (
OE or SEM)
15
____
15
____
ns
t
SAA
Semaphore Address Access Time
____
45
____
65
ns
3603 tbl 12b
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
10
Waveform of Read Cycles
(5)
Timing of Power-Up Power-Down
NOTES:
1. Timing depends on which signal is asserted last:
CE, OE, LB, or UB.
2. Timing depends on which signal is de-asserted first:
CE, OE, LB, or UB.
3. t
BDD
delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last t
AOE
, t
ACE
, t
AA
or t
BDD
.
5.
SEM = V
IH
.
6. Refer to Chip Enable Truth Table.
t
RC
R/
W
CE
ADDR
t
AA
OE
UB
,
LB
3603 drw 05
(4)
t
ACE
(4)
t
AOE
(4)
t
ABE
(4)
(1)
t
LZ
t
OH
(2)
t
HZ
(3,4)
t
BDD
DATA
OUT
BUSY
OUT
VALID DATA
(4)
(6)
CE
3603 drw 06
t
PU
I
CC
I
SB
t
PD
50%
50%
(6)
,
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
11
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM
CE= V
IL
and
SEM = V
IH
. To access semaphore,
CE = V
IH
and
SEM = V
IL
. Either condition must be valid for the entire t
EW
time. Refer to Chip Enable
Truth Table.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary over voltage
and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. 'X' in part numbers indicates power rating (S or L).
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
(5,6)
Symbol
Parameter
70V27X15
Com'l Only
70V27X20
Com'l Only
70V27X25
Com'l Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
15
____
20
____
25
____
ns
t
EW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
t
AW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
12
____
15
____
20
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
t
HZ
Output High-Z Time
(1,2)
____
10
____
10
____
15
ns
t
DH
Data Hold Time
(4)
0
____
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
10
____
10
____
15
ns
t
OW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
0
____
ns
t
SWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
t
SPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
3603 tbl 13a
Symbol
Parameter
70V27X35
Com'l & Ind
70V27X55
Com'l Only
Unit
Min.
Max.
Min.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
35
____
55
____
ns
t
EW
Chip Enable to End-of-Write
(3)
30
____
45
____
ns
t
AW
Address Valid to End-of-Write
30
____
45
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
ns
t
WP
Write Pulse Width
25
____
40
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
20
____
30
____
ns
t
HZ
Output High-Z Time
(1,2)
____
20
____
25
ns
t
DH
Data Hold Time
(4)
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
20
____
25
ns
t
OW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
ns
t
SWRD
SEM Flag Write to Read Time
5
____
5
____
ns
t
SPS
SEM Flag Contention Window
5
____
5
____
ns
3603 tbl 13b
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
12
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing
(1,5,8)
NOTES:
1. R/
W or CE or UB and LB must be HIGH during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of a LOW
CE and a LOW R/W for memory array writing cycle.
3. t
WR
is measured from the earlier of
CE or R/W (or SEM or R/W) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last,
CE or R/W.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure
2).
8. If
OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off and data to be placed
on the bus for the required t
DW
. If
OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified t
WP
.
9. To access RAM,
CE = V
IL
and
SEM = V
IH
. To access semaphore,
CE = V
IH
and
SEM = V
IL
. t
EW
must be met for either condition.
10. Refer to Chip Enable Truth Table.
Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing
(1,5)
R/
W
t
WC
t
HZ
t
AW
t
WR
t
AS
t
WP
DATA
OUT
(2)
t
WZ
t
DW
t
DH
t
OW
OE
ADDRESS
DATA
IN
(6)
(4)
(4)
(7)
UB
or
LB
3603 drw 07
(9)
CE
or
SEM
(9,10)
(7)
(3)
3603 drw 08
t
WC
t
AS
t
WR
t
DW
t
DH
ADDRESS
DATA
IN
R/
W
t
AW
t
EW
UB
or
LB
(3)
(2)
(6)
CE
or
SEM
(9,10)
(9)
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
13
Timing Waveform of Semaphore Read after Write Timing, Either Side
(1)
NOTES:
1. D
OR
= D
OL
= V
IL
,
CE
R
=
CE
L
= V
IH
, or both
UB & LB = V
IH
(refer to Chip Enable Truth Table).
2. All timing is the same for left and right ports. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
3. This parameter is measured from R/
W
"A"
or
SEM
"A"
going HIGH to R/W
"B"
or
SEM
"B"
going HIGH.
4. If t
SPS
is not satisfied, there is no guarantee which side will be granted the semaphore flag.
SEM
3603 drw 09
t
AW
t
EW
t
SOP
I/O
VALID ADDRESS
t
SAA
R/
W
t
WR
t
OH
t
ACE
VALID ADDRESS
DATA
VALID
IN
DATA
OUT
t
DW
t
WP
t
DH
t
AS
t
SWRD
t
AOE
Read Cycle
Write Cycle
A
0
-A
2
OE
VALID
(2)
NOTES:
1.
CE
= V
IH
or
UB and LB = V
IH
for the duration of the above timing (both write and read cycle), refer to Chip Enable Truth Table.
2. "DATA
OUT
VALID" represents all I/O's (I/O
0
-I/O
15
) equal to the semaphore value.
SEM
"A"
3603 drw 10
t
SPS
MATCH
R/
W
"A"
MATCH
A
0"A"
-A
2"A"
SIDE
"A"
(2)
SEM
"B"
R/
W
"B"
A
0"B"
-A
2"B"
SIDE
(2)
"B"
Timing Waveform of Semaphore Write Contention
(1,3,4)
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
14
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and
BUSY (M/S = V
IH
)".
2. To ensure that the earlier of the two ports wins.
3. t
BDD
is a calculated parameter and is the greater of 0, t
WDD
t
WP
(actual), or t
DDD
t
DW
(actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. 'X' in part numbers indicates power rating (S or L).
7. Industrial temperature: for other speeds, packages and powers contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(6,7)
70V27X15
Com'l Only
70V27X20
Com'l Only
70V27X25
Com'l Only
Unit
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
BUSY TIMING (M/
S=V
IH
)
t
BAA
BUSY Access Time from Address Match
____
15
____
20
____
25
ns
t
BDA
BUSY Disable Time from Address Not Matched
____
15
____
20
____
25
ns
t
BAC
BUSY Access Time from Chip Enable Low
____
15
____
20
____
25
ns
t
BDC
BUSY Disable Time from Chip Enable High
____
15
____
20
____
25
ns
t
APS
Arbitration Priority Set-up Time
(2)
5
____
5
____
5
____
ns
t
BDD
BUSY Disable to Valid Data
(3)
____
17
____
35
____
35
ns
t
WH
Write Hold After
BUSY
(5)
12
____
15
____
20
____
ns
BUSY TIMING (M/
S=V
IL
)
t
WB
BUSY Input to Write
(4)
0
____
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(5)
12
____
15
____
20
____
ns
PORT-TO-PORT DELAY TIMING
t
WDD
Write Pulse to Data Delay
(1)
____
30
____
45
____
55
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
25
____
30
____
50
ns
3603 tbl 14a
70V27X35 Com'l
& Ind
70V27X55
Com'l Only
Unit
Symbol
Parameter
Min.
Max.
Min.
Max.
BUSY TIMING (M/
S=V
IH
)
t
BAA
BUSY Access Time from Address Match
____
35
____
45
ns
t
BDA
BUSY Disable Time from Address Not Matched
____
35
____
45
ns
t
BAC
BUSY Access Time from Chip Enable Low
____
35
____
45
ns
t
BDC
BUSY Disable Time from Chip Enable High
____
35
____
45
ns
t
APS
Arbitration Priority Set-up Time
(2)
5
____
5
____
ns
t
BDD
BUSY Disable to Valid Data
(3)
____
40
____
50
ns
t
WH
Write Hold After
BUSY
(5)
25
____
25
____
ns
BUSY TIMING (M/S=V
IL
)
t
WB
BUSY Input to Write
(4)
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(5)
25
____
25
____
ns
PORT-TO-PORT DELAY TIMING
t
WDD
Write Pulse to Data Delay
(1)
____
65
____
85
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
60
____
80
ns
3603 tbl 14b
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
15
Timing Waveform of Write with Port-to-Port Read and BUSY
(2,5)
(M/S = V
IH
)
(4)
NOTES:
1. t
WH
must be met for both
BUSY input (SLAVE) and output (MASTER).
2.
BUSY is asserted on port "B" blocking R/W
"B"
, until
BUSY
"B"
goes HIGH.
3. t
WB
is only for the "Slave" version.
Timing Waveform Write with BUSY (M/S = V
IL
)
3603 drw 11
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD
(3)
t
WDD
t
BAA
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S = V
IL
(SLAVE).
2.
CE
L
=
CE
R
= V
IL
(refer to Chip Enable Truth Table).
3.
OE = V
IL
for the reading port.
4. If M/
S = V
IL
(SLAVE), then
BUSY is an input. Then for this example BUSY "
A
"= V
IH
and
BUSY "
B
"= input is shown above.
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
3603 drw 12
R/W
"A"
BUSY
"B"
t
WP
t
WB
R/
W
"B"
t
WH
(2)
(3)
(1)
,
,
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
16
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing
(M/S = V
IH
)
(1)
NOTES:
1. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
2. If t
APS
is not satisfied, the busy signal will be asserted on one side or another but there is no guarantee on which side busy will be asserted.
3. Refer to Chip Enable Truth Table.
Waveform of BUSY Arbitration Controlled by CE Timing
(M/S = V
IH
)
(1,3)
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
2. Industrial temperature: for other speeds, packages and powers contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(1,2)
3603 drw 13
ADDR
"A"
and
"B"
ADDRESSES MATCH
CE
"B"
BUSY
"B"
t
APS
t
BAC
t
BDC
(2)
CE
"A"
3603 drw 14
ADDR
"A"
ADDRESS "N"
ADDR
"B"
BUSY
"B"
t
APS
t
BAA
t
BDA
(2)
MATCHING ADDRESS "N"
Symbol
Parameter
70V27X15
Com'l Only
70V27X20
Com'l Only
70V27X25
Com'l Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
INTERRUPT TIMING
t
AS
Address Set-up Time
0
____
0
____
0
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
ns
t
INS
Interrupt Set Time
____
15
____
20
____
25
ns
t
INR
Interrupt Reset Time
____
25
____
20
____
35
ns
3603 tbl 15a
Symbol
Parameter
70V27X35
Com'l &Ind
70V27X55
Com'l Only
Unit
Min.
Max.
Min.
Max.
INTERRUPT TIMING
t
AS
Address Set-up Time
0
____
0
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
INS
Interrupt Set Time
____
30
____
40
ns
t
INR
Interrupt Reset Time
____
35
____
45
ns
3603 tbl 15b
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
17
Waveform of Interrupt Timing
(1,5)
Truth Table IV Interrupt Flag
(1,4)
NOTES:
1. Assumes
BUSY
L
=
BUSY
R
=V
IH
.
2. If
BUSY
L
= V
IL
, then no change.
3. If
BUSY
R
= V
IL
, then no change.
4. Refer to Chip Enable Truth Table.
NOTES:
1. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
2. See Interrupt Truth Table.
3. Timing depends on which enable signal (
CE
or R/
W) is asserted last.
4. Timing depends on which enable signal (
CE or R/W) is de-asserted first.
5. Refer to Chip Enable Truth Table.
3603 drw 15
ADDR
"A"
INTERRUPT SET ADDRESS
CE
"A"
R/
W
"A"
t
AS
t
WC
t
WR
(3)
(4)
t
INS
(3)
INT
"B"
(2)
3603 drw 16
ADDR
"B"
INTERRUPT CLEAR ADDRESS
CE
"B"
OE
"B"
t
AS
t
RC
(3)
t
INR
(3)
INT
"B"
(2)
Left Port
Right Port
Function
R/
W
L
CE
L
OE
L
A
14L
-A
0L
INT
L
R/
W
R
CE
R
OE
R
A
14R
-A
0R
INT
R
L
L
X
7FFF
X
X
X
X
X
L
(2)
Set Right
INT
R
Flag
X
X
X
X
X
X
L
L
7FFF
H
(3)
Reset Right
INT
R
Flag
X
X
X
X
L
(3)
L
L
X
7FFE
X
Set Left
INT
L
Flag
X
L
L
7FFE
H
(2)
X
X
X
X
X
Reset Left
INT
L
Flag
3603 tbl 16
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
18
Truth Table V Address BUSY Arbritration
(4)
NOTES:
1. Pins
BUSY
L
and
BUSY
R
are both outputs when the part is configured as a master. Both are inputs when configured as a slave.
BUSY
outputs on the IDT70V27 are
push-pull, not open drain outputs. On slaves the
BUSY input internally inhibits writes.
2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address
and enable inputs of this port. If t
APS
is not met, either
BUSY
L
or
BUSY
R
= LOW will result.
BUSY
L
and
BUSY
R
outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when
BUSY
L
outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored
when
BUSY
R
outputs are driving LOW regardless of actual logic level on the pin.
4. Refer to Chip Enable Truth Table.
Truth Table VI Example of Semaphore Procurement Sequence
(1,2)
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V27.
2. There are eight semaphore flags written to via I/O
0
and read from all the I/O's (I/O
0
-I/O
15
). These eight semaphores are addressed by A
0
- A
2
.
Functional Description
The IDT70V27 provides two ports with separate control, address and
I/O pins that permit independent access for reads or writes to any location
in memory. The IDT70V27 has an automatic power down feature
controlled by
CE
0
and CE
1
. The
CE
0
and
CE
1
control the on-chip power
down circuitry that permits the respective port to go into a standby mode
when not selected (
CE HIGH). When a port is enabled, access to the entire
memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail box
or message center) is assigned to each port. The left port interrupt flag
(
INT
L
) is asserted when the right port writes to memory location 7FFE
(HEX), where a write is defined as
CE
R
= R/
W
R
= V
IL
per the Truth Table
IV. The left port clears the interrupt through access of address location
7FFE when
CE
L
=
OE
L
= V
IL
, R/
W is a "don't care". Likewise, the right
port interrupt flag (
INT
R
) is asserted when the left port writes to memory
location 7FFF (HEX) and to clear the interrupt flag (
INT
R
), the
right port must read the memory location 7FFF. The message (16 bits) at
7FFE or 7FFF is user-defined since it is an addressable SRAM location.
If the interrupt func-tion is not used, address locations 7FFE and 7FFF are
not used as mail boxes, but as part of the random access memory. Refer
to Truth Table IV for the interrupt operation.
Busy Logic
Busy Logic provides a hardware indication that both ports of the RAM
have accessed the same location at the same time. It also allows one of the
two accesses to proceed and signals the other side that the RAM is "Busy".
The
BUSY pin can then be used to stall the access until the operation on
Inputs
Outputs
Function
CE
L
CE
R
A
0L
-A
14L
A
0R
-A
14R
BUSY
L
(1)
BUSY
R
(1)
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit
(3)
3603 tbl 17
Functions
D0 - D15 Left
D
0
- D
15
Right
Status
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
3603 tbl 18
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
19
the other side is completed. If a write operation has been attempted from
the side that receives a
BUSY indication, the write signal is gated internally
to prevent the write from proceeding.
The use of
BUSY logic is not required or desirable for all applications.
In some cases it may be useful to logically OR the
BUSY outputs together
and use any
BUSY indication as an interrupt source to flag the event of
an illegal or illogical operation. If the write inhibit function of
BUSY logic is
not desirable, the
BUSY logic can be disabled by placing the part in slave
mode with the M/
S pin. Once in slave mode the BUSY pin operates solely
as a write inhibit input pin. Normal operation can be programmed by tying
the
BUSY pins HIGH. If desired, unintended write operations can be
prevented to a port by tying the
BUSY pin for that port LOW.
The
BUSY outputs on the IDT 70V27 RAM in master mode, are push-
pull type outputs and do not require pull up resistors to operate. If these
RAMs are being expanded in depth, then the
BUSY indication for the
resulting array requires the use of an external AND gate.
Width Expansion with BUSY Logic
Master/Slave Arrays
When expanding an IDT70V27 RAM array in width while using
BUSY
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT70V27 RAMs.
logic, one master part is used to decide which side of the RAM array
will receive a
BUSY indication, and to output that indication. Any number
of slaves to be addressed in the same address range as the master, use
the busy signal as a write inhibit signal. Thus on the IDT70V27 RAM the
BUSY pin is an output if the part is used as a master (M/S pin = V
IH
), and
the
BUSY pin is an input if the part is used as a slave (M/S pin = V
IL
) as
shown in Figure 3.
If two or more master parts were used when expanding in width, a split
decision could result with one master indicating
BUSY on one side of the
array and another master indicating
BUSY on one other side of the array.
This would inhibit the write operations from one port for part of a word and
inhibit the write operations from the other port for the other part of the word.
The
BUSY arbitration, on a master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write. In
a master/slave array, both address and chip enable must be valid long
enough for a
BUSY flag to be output from the master before the actual write
pulse can be initiated with either the R/
W signal or the byte enables. Failure
to observe this timing can result in a glitched internal write inhibit signal and
corrupted data in the slave.
Semaphores
The IDT70V27 is a fast Dual-Port 32K x 16 CMOS Static RAM with
an additional 8 address locations dedicated to binary semaphore flags.
These flags allow either processor on the left or right side of the Dual-Port
RAM to claim a privilege over the other processor for functions defined by
the system designer's software. As an example, the semaphore can be
used by one processor to inhibit the other from accessing a portion of the
Dual-Port RAM or any other shared resource.
The Dual-Port RAM features a fast access time, and both ports are
completely independent of each other. This means that the activity on the
left port in no way slows the access time of the right port. Both ports are
identical in function to standard CMOS Static RAM and can be read from,
or written to, at the same time with the only possible conflict arising from the
simultaneous writing of, or a simultaneous READ/WRITE of, a non-
semaphore location. Semaphores are protected against such ambiguous
situations and may be used by the system program to avoid any conflicts
in the non-semaphore portion of the Dual-Port RAM. These devices have
an automatic power-down feature controlled by
CE the Dual-Port RAM
enable, and
SEM, the semaphore enable. The CE and SEM pins control
on-chip power down circuitry that permits the respective port to go into
standby mode when not selected. This is the condition which is shown in
Truth Table II where
CE
and
SEM are both HIGH.
Systems which can best use the IDT70V27 contain multiple processors
or controllers and are typically very high-speed systems which are
software controlled or software intensive. These systems can benefit from
a performance increase offered by the IDT70V27's hardware sema-
phores, which provide a lockout mechanism without requiring complex
programming.
Software handshaking between processors offers the maximum in
system flexibility by permitting shared resources to be allocated in varying
configurations. The IDT70V27 does not use its semaphore flags to control
any resources through hardware, thus allowing the system designer total
flexibility in system architecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred in
either processor. This can prove to be a major advantage in very high-
speed systems.
How the Semaphore Flags Work
The semaphore logic is a set of eight latches which are independent
of the Dual-Port RAM. These latches can be used to pass a flag, or token,
from one port to the other to indicate that a shared resource is in use. The
semaphores provide a hardware assist for a use assignment method
called "Token Passing Allocation." In this method, the state of a semaphore
latch is used as a token indicating that shared resource is in use. If the left
processor wants to use this resource, it requests the token by setting the
latch. This processor then verifies its success in setting the latch by reading
it. If it was successful, it proceeds to assume control over the shared
resource. If it was not successful in setting the latch, it determines that the
right side processor has set the latch first, has the token and is using the
shared resource. The left processor can then either repeatedly request
that semaphore's status or remove its request for that semaphore to perform
another task and occasionally attempt again to gain control of the token via
the set and test sequence. Once the right side has relinquished the token,
the left side should succeed in gaining control.
The semaphore flags are active low. A token is requested by writing
a zero into a semaphore latch and is released when the same side writes
3603 drw 17
MASTER
Dual Port RAM
BUSY
R
CE
0
MASTER
Dual Port RAM
BUSY
R
SLAVE
Dual Port RAM
BUSY
R
SLAVE
Dual Port RAM
BUSY
R
CE
1
CE
1
CE
0
A
15
BUSY
L
BUSY
L
BUSY
L
BUSY
L
BUSY
L
BUSY
R
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
20
D
3603 drw 18
0
D
Q
WRITE
D
0
D
Q
WRITE
SEMAPHORE
REQUEST FLIP FLOP
SEMAPHORE
REQUEST FLIP FLOP
L PORT
R PORT
SEMAPHORE
READ
SEMAPHORE
READ
a one to that latch.
The eight semaphore flags reside within the IDT70V27 in a separate
memory space from the Dual-Port RAM. This address space is accessed
by placing a low input on the
SEM pin (which acts as a chip select for the
semaphore flags) and using the other control pins (Address,
OE, and
R/
W) as they would be used in accessing a standard Static RAM. Each
of the flags has a unique address which can be accessed by either side
through address pins A
0
A
2
. When accessing the semaphores, none of
the other address pins has any effect.
When writing to a semaphore, only data pin D
0
is used. If a low level
is written into an unused semaphore location, that flag will be set to a zero
on that side and a one on the other side (see Table VI). That semaphore
can now only be modified by the side showing the zero. When a one is
written into the same location from the same side, the flag will be set to a
one for both sides (unless a semaphore request from the other side is
pending) and then can be written to by both sides. The fact that the side
which is able to write a zero into a semaphore subsequently locks out writes
from the other side is what makes semaphore flags useful in interprocessor
communications. (A thorough discussion on the use of this feature follows
shortly.) A zero written into the same location from the other side will be
stored in the semaphore request latch for that side until the semaphore is
freed by the first side.
When a semaphore flag is read, its value is spread into all data bits so
that a flag that is a one reads as a one in all data bits and a flag containing
a zero reads as all zeros. The read value is latched into one side's output
register when that side's semaphore select (
SEM) and output enable (OE)
signals go active. This serves to disallow the semaphore from changing
state in the middle of a read cycle due to a write cycle from the other side.
Because of this latch, a repeated read of a semaphore in a test loop must
cause either signal (
SEM or OE) to go inactive or the output will never
change.
A sequence WRITE/READ must be used by the semaphore in order
to guarantee that no system level contention will occur. A processor
requests access to shared resources by attempting to write a zero into a
semaphore location. If the semaphore is already in use, the semaphore
request latch will contain a zero, yet the semaphore flag will appear as a
one, a fact which the processor will verify by the subsequent read (see
Table VI). As an example, assume a processor writes a zero to the left port
at a free semaphore location. On a subsequent read, the processor will
verify that it has written successfully to that location and will assume control
over the resource in question. Meanwhile, if a processor on the right side
attempts to write a zero to the same semaphore flag it will fail, as will be
verified by the fact that a one will be read from that semaphore on the right
side during the subsequent read. Had a sequence of READ/WRITE been
used instead, system contention problems could have occurred during the
gap between the read and write cycles.
It is important to note that a failed semaphore request must be followed
by either repeated reads or by writing a one into the same location. The
reason for this is easily understood by looking at the simple logic diagram
of the semaphore flag in Figure 4. Two semaphore request latches feed
Figure 4. IDT70V27 Semaphore Logic
into a semaphore flag. Whichever latch is first to present a zero to the
semaphore flag will force its side of the semaphore flag low and the other
side high. This condition will continue until a one is written to the same
semaphore request latch. Should the other side's semaphore request latch
have been written to a zero in the meantime, the semaphore flag will flip
over to the other side as soon as a one is written into the first side's request
latch. The second side's flag will now stay low until its semaphore request
latch is written to a one. From this it is easy to understand that, if a semaphore
is requested and the processor which requested it no longer needs the
resource, the entire system can hang up until a one is written into that
semaphore request latch.
The critical case of semaphore timing is when both sides request a
single token by attempting to write a zero into it at the same time. The
semaphore logic is specially designed to resolve this problem. If simulta-
neous requests are made, the logic guarantees that only one side receives
the token. If one side is earlier than the other in making the request, the first
side to make the request will receive the token. If both requests arrive at
the same time, the assignment will be arbitrarily made to one port or the
other.
One caution that should be noted when using semaphores is that
semaphores alone do not guarantee that access to a resource is secure.
As with any powerful programming technique, if semaphores are misused
or misinterpreted, a software error can easily happen.
Initialization of the semaphores is not automatic and must be handled
via the initialization program at power-up. Since any semaphore request
flag which contains a zero must be reset to a one, all semaphores on both
sides should have a one written into them at initialization from both sides
to assure that they will be free when needed.
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
21
Ordering Information
NOTE:
1. Industrial temperature range is available on selected TQFP packages in low power.
For other speeds, packages and powers contact your sales office.
A
Power
999
Speed
A
Package
A
Process/
Temperature
Range
Blank
I
(1)
Commercial (0C to +70C)
Industrial (-40C to +85C)
15
20
25
35
55
S
L
Standard Power
Low Power
XXXXX
Device
Type
512K (32K x 16) 3.3V Dual-Port RAM
70V27
IDT
3603 drw 19
Speed in nanoseconds
Commercial
Commercial
Commercial
Commercial & Industrial
Commercial
144-pin fpBGA (BF144-1)
100-pin TQFP (PN100-1)
108-pin PGA (G108-1)
BF
PF
G
Preliminary Datasheet:
"PRELIMINARY' datasheets contain descriptions for products that are in early release.
Commercial and Industrial Temperature Range
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
22
Datasheet Document History
12/3/98:
Initiated Document History
Converted to new format
Typographical and cosmetic changes
Added fpBGA information
Added 15ns and 20ns speed grades
Updated DC Electrical Characteristics
Added additional notes to pin configurations
4/2/99:
Page 5
Fixed typo in Table III
8/1/99:
Page 3
Changed package body height from 1.1mm to 1.4mm
8/30/99:
Page 1
Changed 660mW to 660
W
4/25/00:
Replaced IDT logo
Page 2 Made pin correction
Changed 200mV to 0mV in notes
1/12/01:
Page 1
Fixed page numbering; copywright
Page 6
Increated storage temperature parameter
Clarified T
A
Parameter
Page 7 and8 DC Electrical parameterschanged wording from "open" to "disabled"
Removed Preliminary status
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