TECHNICAL DATA
120
Quad Bilateral Switch
High-Voltage Silicon-Gate CMOS
The IW4066B is a quad bilateral switch intended for the
transmission or multiplexing of analog or digital signals. In addition,
the on-state resistance is relatively constant over the full input-signal
range.
The IW4066B consists of four independent bilateral switches. A
single control signal is required per switch. Both the p and the n device
in a given switch are biased on or off simultaneously by the control
signal.(As show in Fig.1.)The well of the n-channel device on each
switch is either tied to the input when the switch is on or to GND when
the switch is off. This configuration eliminates the variation of the
switch-transistor threshold voltage with input signal, and thus keeps the
on-state resistance low over the full operating-signal range.
The advantages over single-channel switches include peak input-
signal voltage swings equal to the full supply voltage, and more
constant on-state impedance over the input-signal range.
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1
A at 18 V over full package-
temperature range; 100 nA at 18 V and 25
C
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
IW4066B
ORDERING INFORMATION
IW4066BN Plastic
IW4066BD SOIC
T
A
= -55
to 125
C for all packages
PIN ASSIGNMENT
FUNCTION TABLE
On/Off
Control Input
State of
Analog Switch
L
Off
H
On
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
IW4066B
121
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +20
V
V
IN
DC Input Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
10
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
P
D
Power Dissipation per Output Transistor
100
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65
to 125
C
SOIC Package: : - 7 mW/
C from 65
to 125
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
3.0
18
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
IW4066B
122
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
-55
C
25
C
125
C
Unit
V
IH
Minimum High-Level
Voltage ON/Off
Control Inputs
R
ON
= Per Spec
5.0
10
15
3.5(Min)
7(Min)
11(Min)
V
V
IL
Minimum Low-Level
Voltage ON/Off
Control Inputs
R
ON
= Per Spec
5.0
10
15
1
2
2
1
2
2
1
2
2
V
I
IN
Maximum Input
Leakage Current,
ON/OFF Control
Inputs
V
IN
= V
CC
or GND
18
0.1
0.1
1.0
A
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
= V
CC
or GND
5.0
10
15
20
0.25
0.5
1
5
0.25
0.5
1
5
7.5
15
30
150
A
R
ON
Maximum "ON"
Resistance
V
C
= V
CC
R
L
=10 k
returned
to
V
CC
- GND
2
V
IS
= GND to V
CC
5.0
10
15
800
310
200
1050
400
240
1300
550
320
R
ON
Maximum Difference
in "ON" Resistance
Between Any Two
Channels in the Same
Package
V
C
= V
CC
R
L
=10 k
5.0
10
15
-
-
-
15
10
5
-
-
-
I
OFF
Maximum Off-
Channel Leakage
Current, Any One
Channel
V
C
= 0 V
V
IS
=18 V; V
OS
= 0 V
V
IS
=0 V; V
OS
= 18V
18
0.1
0.1
1.0
A
I
ON
Maximum On-
Channel Leakage
Current, Any One
Channel
V
C
= 0 V
V
IS
=18 V; V
OS
= 0 V
V
IS
=0 V; V
OS
= 18V
18
0.1
0.1
1.0
A
IW4066B
123
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF, R
L
=200k
, Input t
r
=t
f
=20 ns)
V
CC
Guaranteed Limit
Symbol
Parameter
V
-55
C
25
C
125
C
Unit
t
PLH
, t
PHL
Maximum Propagation Delay, Analog Input to
Analog Output (Figure 2)
5.0
10
15
40
20
15
40
20
15
80
40
30
ns
t
PLZ
, t
PHZ
,
t
PZL
, t
PZH
Maximum Propagation Delay, ON/OFF
Control to Analog Output (Figure 3)
5.0
10
15
70
40
30
70
40
30
140
80
60
ns
C
Maximum Capacitance
ON/OFF Control Input
Control Input = GND
Analog I/O
Feedthrough
-
15
7.5
0.6
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless
Noted)
V
CC
Limit
*
Symbol
Parameter
Test Conditions
V
25
C
Unit
THD
Total Harmonic
Distortion
V
C
= V
CC
, GND = -5 V
R
L
= 10 k
, f
IS
=1 kHz sine wave
5
0.4
%
BW
Maximum On-
Channel Bandwidth or
Minimum Frequency
Response
V
C
= V
CC
, GND = -5 V
R
L
= 1 k
5
40
MHz
BW
Maximum On-
Channel Bandwidth or
Minimum Frequency
Response
V
C
= GND , V
IS
= 5 V
R
L
= 1 k
10
1
MHz
BW
Maximum On-
Channel Bandwidth or
Minimum Frequency
Response
V
C
(A)
= V
CC
= 5 V
V
C
(B)
= GND = -5 V
V
IS
(A)
= 5 V
P - P
,50
source
R
L
= 1 k
5
8
MHz
-
Cross talk (Control
Input to Signal
Output)
V
C
= 10 V
t
r
, t
f
= 20 ns
R
L
= 10 k
10
50
mV
-
Maximum Control
Input Repetition Rate
V
IS
= V
CC
, R
L
= 1 k
C
L
= 50 pF
V
C
= 10 V (square wave centered on 5 V)
t
r
, t
f
= 20 ns,
V
OS
= 1/2 V
OS
@1 kHz
5
10
15
6
9
9.5
MHz
*
Guaranteed limits not tested. Determined by design and verified by qualification.
IW4066B
124
Switch Input
Switch Output,
I
IS
(mA)
V
OS
(V)
V
CC
(V)
V
IS
(V)
-55
C
+25
C
+125
C
Min
Max
5
5
0
5
0.64
-0.64
0.51
-0.51
0.36
-0.36
-
4.6
0.4
-
10
10
0
10
1.6
-1.6
1.3
-1.3
0.9
-0.9
-
9.5
0.5
-
15
15
0
15
4.2
-4.2
3.4
-3.4
2.4
-2.4
-
13.5
1.5
-
Figure 1. Schematic diagram of 1 of 4 identical switches and its associated control circuitry.
GND
V
IS
V
CC
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