15
IMP, Inc.
ISO 9001 Registered
Process C0810
CMOS 0.8
m
High-Resistance Poly for Analog
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Threshold Voltage
VT
N
0.6
0.8
1.0
V
100x0.8
m
Body Factor
N
0.74
V
1/2
100x0.8
m
Conduction Factor
N
75
94
115
A/V
2
100x100
m
Effective Channel Length
Leff
N
0.8
m
100x0.8
m
Width Encroachment
W
N
0.3
m
Per side
Punch Through Voltage
BVDSS
N
7
13
V
Poly Field Threshold
VTF
P(N)
10
17
V
P-Channel Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Threshold Voltage
VT
P
0.7
0.9
1.1
V
100x0.8
m
Body Factor
P
0.57
V
1/2
100x0.8
m
Conduction Factor
P
25
31
37
A/V
2
100x100
m
Effective Channel Length
Leff
P
0.85
m
100x0.8
m
Width Encroachment
W
P
0.4
m
Per side
Punch Through Voltage
BVDSS
P
7
12
V
Poly Field Threshold Voltage
VTF
P(P)
10
17
V
Diffusion & Thin Films
Symbol
Minimum
Typical
Maximum
Unit
Comments
Well (field) Sheet Resistance
N-well(f)
0.50
0.65
0.80
K
/
n-well
N+ Sheet Resistance
N+
45
60
75
/
N+ Junction Depth
x
jN+
0.25
m
P+ Sheet Resistance
P+
68
90
112
/
P+ Junction Depth
x
jP+
0.4
m
Gate Oxide Thickness
T
GOX
17.5
nm
Field Oxide Thickness
T
FIELD
700
nm
Bottom Poly Sheet Res.
POLY1
15
23
32
/
Gate Poly Sheet Resistance
POLY2
15
23
32
/
Metal-1 Sheet Resistance
M1
40
60
80
m
/
Metal-2 Sheet Resistance
M2
20
30
40
m
/
Passivation Thickness
T
PASS
200+900
nm
oxide+nit.
High Resistance Poly
HI-POLY
1.5
2.0
2.5
K
/
Capacitance
Symbol
Minimum
Typical
Maximum
Unit
Comments
Gate Oxide
C
OX
1.97
fF/
m
2
Metal-1 to Poly1
C
M1P
0.046
fF/
m
2
Metal-1 to Silicon
C
M1S
0.028
fF/
m
2
Metal-2 to Metal-1
C
MM
0.038
fF/
m
2
Poly-1 to Poly-2
C
PP
0.69
0.822
1.015
fF/
m
2
16
C0810-4-98
Process C0810
Physical Characteristics
Starting Material
P <100>
N+/P+ Width/Space
1.4 / 1.6
m
Starting Mat. Resistivity
25 - 50
-cm
N+ To P+ Space
5.9
m
Typ. Operating Voltage
5V
Contact To Poly Space
0.8
m
Well Type
N-well
Contact Overlap Of Diffusion
0.7
m
Metal Layers
2
Contact Overlap Of Poly
0.7
m
Poly Layers
2
Metal-1 Overlap Of Contact
0.7
m
Contact Size
0.8x0.8
m
Metal-1 Overlap Of Via
0.7
m
Via Size
0.8x0.8
m
Metal-2 Overlap Of Via
0.7
m
Metal-1 Width/Space
1.4 / 1.0
m
Minimum Pad Opening
65x65
m
Metal-2 Width/Space
1.4 / 1.1
m
Minimum Pad-to-Pad Spacing
5.0
m
Gate Poly Width/Space
0.8 / 1.0
m
Minimum Pad Pitch
80.0
m
Collector Voltage, V
CE
, Volt.
C0810 Vertical pnp Transistor Characteristics
IC V/S VC, 60 x 7.2
m
Collector Current, I
C
,
A
0
-400.0
0
-1
-2
-3
-4
-5
I
B
= -12.5
A
I
B
= -10.0
A
I
B
= -7.5
A
I
B
= -5.0
A
I
B
= -2.5
A
Base Voltage, V
BE
, Millivolts.
C0810 Vertical pnp Transistor Characteristics
I
C
/I
B
, pnp 60 x 7.2
m
Collector/Base I
C
/I
B
Current, Amps
-10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
-400
-500
-600
-700
-800
I
C
I
B
-900
40.00
20
Drain Voltage, V
DS
, Volts.
C0810 - n - Channel Transistor Characteristics
ID V/S VD, W/L = 100 x 0.8
m
Dr
ain Current, I
DS
, mA
0
0
1
2
3
4
5
V
GS
=5V
V
GS
=4V
V
GS
=3V
V
GS
=2V
V
GS
=1V
-20.0
-10.0
Drain Voltage, V
DS
, Volts.
C0810 - P - Channel Transistor Characteristics
ID V/S VD, W/L = 100 x 0.8
m
Dr
ain Current, I
DS
, mA
0
0
-1
-2
-3
-4
-5
V
GS
= -5V
V
GS
= -4V
V
GS
= -3V
V
GS
= -2V
V
GS
= -1V
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