2004-03-30
Rev. 2.1
Page 1
SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOSTM
Power Transistor
V
DS
600
V
R
DS(on)
0.38
I
D
11
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO262
P-TO220-3-1
P-TO263-3-2
2
P-TO220-3-1
2 3
1
Type
Package
Ordering Code
SPP11N60S5
P-TO220-3-1
Q67040-S4198
SPB11N60S5
P-TO263-3-2
Q67040-S4199
SPI11N60S5
P-TO262
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
11
7
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
22
Avalanche energy, single pulse
I
D
= 5.5 A, V
DD
= 50 V
E
AS
340
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
= 11 A, V
DD
= 50 V
E
AR
0.6
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
11
A
Gate source voltage
V
GS
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
Power dissipation,
T
C
= 25C
P
tot
125
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2004-03-30
Rev. 2.1
Page 2
SPP11N60S5, SPB11N60S5
SPI11N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 11 A, T
j
= 125 C
dv/dt
20
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
1
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V,
I
D
=11A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=500
, V
GS
=V
DS
3.5
4.5
5.5
Zero gate voltage drain current
I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
-
-
25
250
A
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V,
I
D
=7A,
T
j
=25C
T
j
=150C
-
-
0.34
0.92
0.38
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
29
-
2004-03-30
Rev. 2.1
Page 3
SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics , at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=7A
-
6
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
1460
-
pF
Output capacitance
C
oss
-
610
-
Reverse transfer capacitance
C
rss
-
21
-
Effective output capacitance,
3)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
45
-
pF
Effective output capacitance,
4)
time related
C
o(tr)
-
85
-
Turn-on delay time
t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=11A, R
G
=6.8
-
130
-
ns
Rise time
t
r
-
35
-
Turn-off delay time
t
d(off)
-
150
225
Fall time
t
f
-
20
30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=11A
-
10.5
-
nC
Gate to drain charge
Q
gd
-
24
-
Gate charge total
Q
g
V
DD
=350V, I
D
=11A,
V
GS
=0 to 10V
-
41.5
54
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=11A
-
8
-
V
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
3C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
4C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2004-03-30
Rev. 2.1
Page 4
SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
11
A
Inverse diode direct current,
pulsed
I
SM
-
-
22
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt
=100A/s
-
650
1105 ns
Reverse recovery charge
Q
rr
-
7.9
-
C
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.015
K/W
R
th2
0.03
R
th3
0.056
R
th4
0.197
R
th5
0.216
R
th6
0.083
Thermal capacitance
C
th1
0.0001878
Ws/K
C
th2
0.0007106
C
th3
0.000988
C
th4
0.002791
C
th5
0.007285
C
th6
0.063
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2004-03-30
Rev. 2.1
Page 5
SPP11N60S5, SPB11N60S5
SPI11N60S5
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
SPP11N60S5
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0
5
10
15
V
DS
25
V
0
5
10
15
20
25
A
35
I
D
6V
7V
8V
9V
20V
12V
10V
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