Jun-27-2003
1
BAR63...
Silicon PIN Diodes
PIN diode for high speed
switching of RF signals
Very low forward resistance (low insertion loss)
Very low capacitance (high isolation)
For frequencies up to 3GHz
BAR63-02..
BAR63-03W
BAR63-07L4
BAR63-04
BAR63-04W
BAR63-06
BAR63-06W
BAR63-05
BAR63-05W
1
2
1
D 2
2
3
4
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BAR63-02L*
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4*
TSLP-2-1
SC79
SCD80
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
TSLP-4-4
single, leadless
single
single
single
series
series
common cathode
common cathode
common anode
common anode
parallel pair, leadless
0.4
0.6
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
0.4
G
G
GG
G
G4s
G4s
G5s
G5s
G6s
G6s
P3s
* preliminary data
Jun-27-2003
2
BAR63...
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
50
V
Forward current
I
F
100
mA
Total power dissipation
BAR63-02L, T
S
118C
BAR63-02V, -02W, BAR63-03W, T
S
115C
BAR63-04...BAR63-06, T
S
55C
BAR63-04S, T
S
115C
BAR63-04W...BAR63-06W, T
S
105C
BAR63-07L4, T
S
tbd
P
tot
250
250
250
250
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAR63-02L
BAR63-02V, BAR63-02W
BAR63-03W
BAR63-04...BAR63-06
BAR63-04S
BAR63-04W...BAR63-06W
BAR63-07L4
R
thJS
125
140
155
380
180
180
tbd
K/W
1
For calculation of R
thJA
please refer to the Technical Information
Jun-27-2003
3
BAR63...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
50
-
-
V
Reverse current
V
R
= 35 V
I
R
-
-
10
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.95
1.2
V
Jun-27-2003
4
BAR63...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 5 V, f = 1 MHz
V
R
= 0 V, 100 MHz ... 1.8 GHz
C
T
-
-
0.21
0.3
0.3
-
pF
Reverse parallel resistance
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
V
R
= 0 V, f = 1.8 GHz
R
P
-
-
-
500
15
5
-
-
-
k
Forward resistance
I
F
= 5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
r
f
-
-
1.2
1
2
-
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3 mA,
R
L
= 100
rr
-
75
-
ns
I-region width
W
I
-
4.5
-
m
Insertion loss
1)
I
F
= 1 mA, f = 1.8 GHz
I
F
= 5 mA, f = 1.8 GHz
I
F
= 10 mA, f = 1.8 GHz
|S
21
|
2
-
-
-
-0.15
-0.11
-0.1
-
-
-
dB
Isolation
1)
V
R
= 0 V, f = 0.9 MHz
V
R
= 0 V, f = 1.8 MHz
V
R
= 0 V, f = 2.45 MHz
|S
21
|
2
-
-
-
-17.9
-12.3
-10
-
-
-
1
BAR63-02L in series configuration,
Z
= 50
Jun-27-2003
5
BAR63...
Diode capacitance C
T
=
(V
R
)
f = 1MHz - 1.8GHz
V
EHD07139
R
T
C
0
0
V
pF
0.1
0.2
0.3
0.4
0.5
10
20
30
Reverse parallel resistance R
P
=
(V
R
)
f = Parameter
0
5
10
15
20
V
30
V
R
-1
10
0
10
1
10
2
10
3
10
KOhm
R
p
100 MHz
1 GHz
1.8 GHz
Forward resistance r
f
=
(I
F
)
f = 100MHz
EHD07138
F
f
r
10
-2
-1
10
mA
10
-1
10
0
10
1
10
2
10
2
10
0
10
1
Forward current I
F
=
(V
F
)
T
A
= Parameter
mA
0.3
F
F
EHD07171
V
BAR 63...
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.5
0.8
1
V
1.2
40
25 C
85
C
C
Jun-27-2003
6
BAR63...
Forward current I
F
=
(T
S
)
BAR63-04...BAR63-06
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
mA
120
I
F
Forward current I
F
=
(T
S
)
BAR63-02V, BAR63-02W
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
mA
120
I
F
Forward current I
F
=
(T
S
)
BAR63-03W
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
mA
120
I
F
Forward current I
F
=
(T
S
)
BAR63-04W...BAR63-06W
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
mA
120
I
F
Jun-27-2003
7
BAR63...
Permissible Puls Load R
thJS
=
(t
p
)
BAR63-04...BAR63-06
t
EHB07146
P
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
5
T
t
P
D =
t
P
T
10
0
1
10
2
10
D=
0.5
0.2
0.1
0.05
0.05
0.01
0.005
0
R
thJS
5
5
K/W
Permissible Pulse Load
I
Fmax
/ I
FDC
=
(t
p
)
BAR63-04...BAR63-06
t
EHB07147
P
F
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
t
P
D =
t
P
T
10
0
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
max
DC
F
1
10
5
5
10
2
Permissible Puls Load R
thJS
=
(t
p
)
BAR63-02V, BAR63-02W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/ I
FDC
=
(t
p
)
BAR63-02V, BAR63-02W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Jun-27-2003
8
BAR63...
Permissible Pulse Load
I
Fmax
/ I
FDC
=
(t
p
)
BAR63-03W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load R
thJS
=
(t
p
)
BAR63-03W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/ I
FDC
=
(t
p
)
BAR63-04W...BAR63-06W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load R
thJS
=
(t
p
)
BAR63-04W...BAR63-06W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Jun-27-2003
9
BAR63...
Insertion loss |S
21
|
2
=
(f)
I
F
= Parameter
BAR63-02L in series configuration,
Z
= 50
0
1
2
3
4
GHz
6
f
-0.4
-0.3
-0.2
dB
0
Ins
e
r
t
i
on Los
s
1 mA
5 mA
10 mA
Isolation |S
21
|
2
=
(f)
V
R
= Paramter
BAR63-02L in series configuration,
Z
= 50
0
1
2
3
4
GHz
6
f
-30
-25
-20
-15
-10
dB
0
Is
ol
ati
o
n
0 V
1 V
10 V
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