BAS 125-07
Oct-07-1999
1
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
VPS05178
2
1
3
4
3
2
EHA07008
1
4
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAS 125-07
17s
1 = C1
2 = C2
3 = A2
4 = A1
SOT-143
Maximum Ratings
Parameter
Symbol
Unit
Value
V
Diode reverse voltage
V
R
25
Forward current
I
F
100
mA
Surge forward current (t
< 100s)
I
FSM
500
Total power dissipation
, T
S
= 25 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Maximum Ratings
Junction - ambient
1)
R
thJA
450
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAS 125-07
Oct-07-1999
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
max.
min.
typ.
DC characteristics
Reverse current
V
R
= 20 V
V
R
= 25 V
100
150
A
-
-
I
R
-
-
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F
-
-
-
385
530
800
400
650
950
AC characteristics
1.1
pF
C
T
-
Diode capacitance
V
R
= 0 V, f = 1 MHz
-
r
f
16
-
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
-
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