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Электронный компонент: BAS125-07W

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BAS125-07W
Aug-16-2001
1
Silicon Schottky Diode
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
VPS05605
4
2
1
3
3
2
EHA07008
1
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAS125-07W
17s
1 = C1
2 = C2
3 = A2
4 = A1
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
25
V
Forward current
I
F
100
mA
Surge forward current (t
100
s)
I
FSM
500
Total power dissipation
, T
S
= 96 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Maximum Ratings
Junction - soldering point
1)
R
thJS
215
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAS125-07W
Aug-16-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 20 V
V
R
= 25 V
I
R
-
-
-
-
100
150
nA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F
-
-
-
385
530
800
400
650
950
mV
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
1.1
pF
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
Rf
-
16
-
BAS125-07W
Aug-16-2001
3
Forward current I
F
= f (V
F
)
T
A
= Parameter
0.0
10
EHD07115
BAS 125...
F
F
V
-2
-1
10
0
10
1
10
10
2
mA
-40C
T
A
=
C
25
150 C
C
85
1.0
0.5
V
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
Reverse current I
R
= f (V
R
)
T
A
= Parameter
0
10
EHD07116
BAS 125...
R
R
V
-3
-2
10
-1
10
0
10
10
1
A
20
10
V
T
A
= 125 C
C
= 85
A
T
T
A
= 25 C
Differential forward resistance r
f
= f (I
F
)
f
= 10 kHz
10
EHD07118
BAS 125...
r
f
F
-2
2
10
mA
0
10
10
4
10
1
10
2
10
3
-1
10
0
10
1
10
BAS125-07W
Aug-16-2001
4
Diode capacitance C
T
= f (V
R
)
f
= 1MHz
0
0.0
EHD07117
BAS 125...
C
T
R
V
0.4
pF
1.0
10
V
20
0.6
0.2
0.8