Sep-04-2001
1
BAS40...
1
2
3
VPS05161
Silicon Schottky Diodes
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
BAS40-04
BAS40-05
BAS40-06
BAS40
EHA07005
1
3
2
EHA07004
1
3
2
1
3
EHA07002
EHA07006
1
3
2
Type
Marking
Pin Configuration
Package
BAS40
BAS40-04
BAS40-05
BAS40-06
43s
44s
45s
46s
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3=C
3=C1/A2
3=C1/2
3=A1/2
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
120
mA
Surge forward current, t
10 ms
I
FSM
200
Total power dissipation
T
S
81C, BAS40
T
S
56C, BAS40-04; BAS40-06
T
S
31C , BAS40-05
P
tot
250
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 150
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAS40
BAS40-04; BAS40-06
BAS40-05
R
thJS
275
375
475
K/W
1
For calculation of RthJA please refer to Application Note Thermal Resistance
Sep-04-2001
2
BAS40...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
40
-
-
V
Reverse current
V
R
= 30 V
V
R
= 40 V
I
R
-
-
-
-
1
10
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
V
F
-
-
-
310
450
720
380
500
1000
mV
AC Characteristics
Diode capacitance-
V
R
= 0 V, f = 1 MHz
C
T
-
3
5
pF
Differential forward resistance
I
F
= 10 mA, f = 10 kHz
R
F
-
10
-
Charge carrier life time
I
F
= 25 mA
rr
-
-
100
ps
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