BAT14-03W
Jul-06-2001
1
Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
VPS05176
1
2
2
1
EHA07007
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAT14-03W
O/white
1 = C
2 = A
SOD323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
4
V
Forward current
I
F
90
mA
Total power dissipation
, T
S
85 C
P
tot
100
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
C
Thermal Resistance
Junction - soldering point
1)
R
thJS
690
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAT14-03W
Jul-06-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics (per diode)
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
4
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
0.36
0.48
0.43
0.55
0.52
0.66
AC characteristics (per diode)
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
0.22
0.35
pF
Forward resistance
IF = 10mA / 50mA
R
F
-
5.5
-
BAT14-03W
Jul-06-2001
3
Forward current I
F
= f (V
F
)
T
A
= parameter
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
V
F
-2
10
-1
10
0
10
1
10
2
10
mA
I
F
-40C
25C
85C
125C
Reverse current I
R
= f (V
R
)
T
A
= Parameter
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
R
-3
10
-2
10
-1
10
0
10
1
10
mA
I
R
T
A
=125C
T
A
=85C
T
A
=25C
Diode capacitance C
T
= f (V
R
)
f = 1MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
R
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
T
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