BAT 14-099R
Oct-07-1999
1
Silicon Crossover Ring Quad Schottky Diode
Medium barrier diode for double balanced mixer,
phase detectors and modulators
VPS05178
2
1
3
4
EHA07012
2
4
1
3
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
SOT-143
BAT 14-099R
S8s
1=A1/C4 2=C2/A3 3=C1/A2 4=C3/A4
Maximum Ratings
Parameter
Symbol
Value
Unit
Forward current
I
F
90
mA
Total power dissipation
, T
S
70 C
100
mW
P
tot
Junction temperature
T
j
150
C
Operating temperature range
-55 ... 150
C
T
op
Storage temperature
-55 ... 150
C
T
stg
Thermal Resistance
Junction - ambient
1)
R
thJA
K/W
1020
Junction - soldering point
R
thJS
780
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
BAT 14-099R
Oct-07-1999
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics (per diode)
-
-
-
-
V
F
V
Forward voltage
I
F
= 1 mA
I
F
= 10
0.4
0.48
V
F
-
-
20
mV
Forward voltage matching
1)
I
F
= 10 mA
AC characteristics (per diode)
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
0.38
-
-
pF
Forward resistance
IF = 10mA / 50mA
R
F
-
5.5
-
1)
V
F
is difference between lowest and highest
V
F
in component
Forward current I
F
= f (V
F
)
T
A
= Parameter
0.0
10
EHD07089
BAT 14-099R
F
F
V
10
10
10
10
A
-40 C
T
A
=
0.5
1.0
V
m
-2
-1
0
1
2
25
85
125
C
C
C
Forward current I
F
= f (T
A
*; T
S)
* Package mounted on alumina
0
C
0
EHD07090
BAT 14-099R
F
A
T ; T
S
50
100
150
20
40
60
80
mA
100
T
A
S
T
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