BAT15-03W
Jul-12-2001
1
Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
VPS05176
1
2
1
2
EHA07001
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAT15-03W
P/white
1 = C
2 = A
SOD323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
4
V
V
R
mA
100
I
F
Forward current
Total power dissipation
, T
S
= 70 C
P
tot
100
mW
Junction temperature
C
T
j
150
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
C
Thermal Resistance
Junction - soldering point
1)
R
thJS
690
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAT15-03W
Jul-12-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics (per diode)
V
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
-
-
4
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
-
0.23
0.32
0.32
0.41
AC characteristics (per diode)
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
0.35
pF
Forward resistance
IF = 10mA / 50mA
R
F
-
5.5
-
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