Jan-07-2003
1
BAT18...
Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance
BAT18-04
BAT18-05
3
1
D 2
2
D 1
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BAT18-04
BAT18-05
SOT23
SOT23
series
common cathode
1.8
1.8
AUs
ASs
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAT18-04, BAT18-05
R
thJS
290
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jan-07-2003
2
BAT18...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 20 V
V
R
= 20 V, T
A
= 60 C
I
R
-
-
-
-
20
200
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.92
1.2
V
AC Characteristics
Diode capacitance
V
R
= 20 V, f = 1 MHz
C
T
-
0.75
1
pF
Forward resistance
I
F
= 5 mA, f = 100 MHz
r
f
-
0.4
0.7
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3 mA ,
R
L
= 100
rr
-
120
-
ns
I-region width
W
I
-
3
-
m
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