Feb-03-2003
1
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications
High breakdown voltage
BAW79D
BAW78D
3
1
2
2
3
1
2
2
Type
Package
Configuration
Marking
BAW78D
BAW79D
SOT89
SOT89
single
common cathode
GD
GH
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
400
V
Peak reverse voltage
V
RM
400
Forward current
I
F
1
A
Peak forward current
I
FM
1
Surge forward current, t = 1 s
I
FS
10
Total power dissipation
BAW78D, T
S
125C
BAW79D, T
S
115C
P
tot
1
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAW78D
BAW79D
R
thJS
25
35
K/W
Feb-03-2003
2
BAW78.../BAW79...
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
400
-
-
V
Reverse current
V
R
= 400 V
V
R
= 400 V, T
A
= 150 C
I
R
-
-
-
-
1
50
A
Forward voltage
I
F
= 1 A
I
F
= 2 A
V
F
-
-
-
-
1.6
2
V
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
10
-
pF
Reverse recovery time
I
F
=
200mA, I
R
=
200mA, measured at I
R
= 20mA ,
R
L
= 100
t
rr
-
1
-
s
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Puls generator: t
p
= 10s, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograp: R = 50
, t
r
= 0.35ns
C
1pF
PDF 
ZIP
