Nov-07-2002
1
BB639/BB659...
Silicon Variable Capacitance Diodes
For tuning of extended frequency band
in VHF TV / VTR tuners
High capactance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639
BB659
1
2
Type
Package
Configuration
L
S
(nH) Marking
BB639
BB659
SOD323
SCD80
single
single
1.8
0.6
yellow S
DE
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage
( R
5k )
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Nov-07-2002
2
BB639/BB659...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
36
27.7
2.5
2.4
38.3
29.75
2.85
2.6
40
31.8
3.2
2.9
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
13.5
14.7
-
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
9.8
10.4
-
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz, 7 diode sequence
BB639
V
R
= 1 V, V
R
= 28 V, f = 1 MHz, 4 diode sequence
BB659
V
R
= 1 V, V
R
= 28 V, f = 1 MHz, 7 diode sequence
BB659
C
T
/C
T
-
-
-
-
0.3
0.4
2.5
1
2
%
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
-
0.65
0.7
1
For details please refer to Application Note 047.
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