Oct-25-2002
1
BB679...
Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio C
1V
/C
28V
(typ. 18.3)
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB679-02V
1
2
Type
Package
Configuration
L
S
(nH) Marking
BB679-02V*
SC79
single
0.6
K
* Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage ( R
5k )
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Oct-25-2002
2
BB679...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
10
100
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
43.5
33
2.55
2.4
47.5
36
2.75
2.6
51.5
38.8
2.95
2.8
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
16.5
18.3
20
-
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
12
13.1
14.5
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
2
%
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
-
0.6
0.8
1
For details please refer to Application Note 047.
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