Nov-07-2002
1
BB804...
Silicon Variable Capacitance Diode
For FM tuners
Monolithic chip with common cathode
for perfect tracking of both diodes
Uniform "square law" characteristics
Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration
BB804
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BB804
SOT23
common cathode
1.8
SF1/2/3*
*For differences see next page Capacitance groups
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
18
V
Peak reverse voltage
V
RM
20
Forward current
I
F
50
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Nov-07-2002
2
BB804...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 16 V
V
R
= 16 V, T
A
= 65 C
I
R
-
-
-
-
20
200
nA
AC Characteristics
Diode capacitance
1)
V
R
= 2 V, f = 1 MHz
C
T
42
-
47.5
pF
Capacitance ratio
V
R
= 2 V, V
R
= 8 V, f = 1 MHz
C
T2
/C
T8
1.65
1.71
-
Series resistance
V
R
= 2 V, f = 100 MHz
r
S
-
0.18
-
Figure of merit
f
= 100 MHz, V
R
= 2 V
Q
-
200
-
Temperature coefficient of diode capacitance
V
R
= 2 V, f = 1 MHz
TC
C
-
330
-
ppm/K
1
Capacitance groups at 2V , coded 1; 2 ; 3
C
T
/groups 1 2 3
C
2V
min 43pF 44pF 45pF
C
2V
max 44.5pF 45.5pF
46.5pF
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
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