Nov-07-2002
1
BB837 /BB857...
Silicon Tuning Diode
For SAT -indoor-units
High capacitance ratio
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB837
BB857
1
2
Type
Package
Configuration
L
S
(nH) Marking
BB837
BB857
SOD323
SCD80
single
single
1.8
0.6
M
OO
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage
R
5k
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Nov-07-2002
2
BB837 /BB857...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
6
0.5
0.45
6.6
0.55
0.52
7.2
0.65
-
pF
Capacitance ratio
V
R
= 1 V, V
R
= 25 V, f = 1 MHz
C
T1
/C
T25
10.2
12
-
-
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
9.7
12.7
-
Capacitance matching
1)
V
R
= 1V ... 28V, f = 1 MHz
C
T
/C
T
-
-
5
%
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
-
1.5
-
1
For details please refer to Application Note 047
PDF 
ZIP