Jan-13-2004
1
BBY56...
Silicon Tuning Diode
Excellent linearity
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
BBY56-02W
BBY56-03W
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BBY56-02W
BBY56-03W
SCD80
SOD323
single
single
0.6
1.8
66
6 red
Maximum Ratings at
T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Jan-13-2004
2
BBY56...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 6 V
V
R
= 6 V, T
A
= 85 C
I
R
-
-
-
-
5
100
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
37
22
14.8
-
40
-
15.8
12.1
43
25
16.8
-
pF
Capacitance ratio
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
C
T1
/C
T3
2.15
-
2.53
3.3
-
-
Series resistance
V
R
= 1 V, f = 470 MHz
r
S
-
0.25
-
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