Mar-19-2003
1
BBY57...
Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
High capacitance ratio
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs
BBY57-02L
BBY57-02V
BBY57-02W
BBY57-05W
1
2
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BBY57-02L*
BBY57-02V
BBY57-02W
BBY57-05W
TSLP-2
SC79
SCD80
SOT323
single
single
single
common cathode
0.4
0.6
0.6
1.4
55
5
55
D5s
* Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Mar-19-2003
2
BBY57...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 8 V
V
R
= 8 V, T
A
= 85 C
I
R
-
-
-
-
10
100
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2.5 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
16.5
-
-
3.5
17.5
9.35
7
4.7
18.6
-
-
5.5
pF
Capacitance ratio
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
C
T1
/C
T3
-
2.45
-
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
C
T1
/C
T4
3
3.7
4.5
Series resistance
V
R
= 1 V, f = 470 MHz, BBY57-02L
V
R
= 1 V, f = 470 MHz, all others
r
S
-
-
0.35
0.3
-
-
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