2004-02-02
Page 1
HITFET
====
BTS 3134 D
Smart Lowside Power Switch
Product Summary
Drain source voltage
V
DS
42
V
On-state resistance
R
DS(on)
50
m
Nominal load current
I
D(Nom)
3.5
A
Clamping energy
E
AS
3
J
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
C compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
V
bb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
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BTS 3134 D
Maximum Ratings at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
V
DS
42
V
Drain source voltage for short circuit protection
T
j
= -40...150C
V
DS(SC)
30
Continuous input current
-0.2V
V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
|
2
mA
Operating temperature
T
j
-40 ...+150
C
Storage temperature
T
stg
-55 ... +150
Power dissipation
T
C
= 85 C
6cm
2
cooling area , T
A
= 85 C
P
tot
43
1.1
W
Unclamped single pulse inductive energy
1)
E
AS
3
J
Load dump protection V
LoadDump
2)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2
,
R
L
= 4.5
, V
A
= 13.5 V
V
LD
65
V
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
2
kV
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R
thJC
1.5
K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
115
55
1 Not tested, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain
connection. PCB mounted vertical without blown air.
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BTS 3134 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42
-
55
V
Off-state drain current T
j
= -40 ... +150C
V
DS
= 32 V, V
IN
= 0 V
I
DSS
-
1.5
10
A
Input threshold voltage
I
D
=
1.4 mA, T
j
= 25 C
I
D
=
1.4 mA, T
j
= 150 C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current
I
IN(on)
-
10
30
A
On-state resistance
V
IN
= 5 V, I
D
= 3 A, T
j
= 25 C
V
IN
= 5 V, I
D
= 3 A, T
j
= 150 C
R
DS(on)
-
-
45
75
60
100
m
On-state resistance
V
IN
= 10 V, I
D
= 3 A, T
j
= 25 C
V
IN
= 10 V, I
D
= 3 A, T
j
= 150 C
R
DS(on)
-
-
35
65
50
90
Nominal load current
T
j
< 150C, V
IN
= 10 V, T
A
= 85 C, SMD
1)
I
D(Nom)
3.5
-
-
A
Nominal load current
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 C, T
j
< 150C
I
D(ISO)
7.1
-
-
Current limit (active if V
DS
>2.5 V)
2)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 s
I
D(lim)
18
24
30
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 s.
2004-02-02
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BTS 3134 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
-
60
100
s
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
-
60
100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
-
0.3
1.5
V/s
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
-
0.7
1.5
Protection Functions
1)
Thermal overload trip temperature
T
jt
150
175
-
C
Input current protection mode
I
IN(Prot)
80
160
300
A
Input current protection mode
T
j
= 150 C
I
IN(Prot)
-
130
300
Unclamped single pulse inductive energy
2)
I
D
= 3 A, T
j
= 25 C, V
bb
= 12 V
E
AS
3
-
-
J
Inverse Diode
Inverse diode forward voltage
I
F
= 15 A, t
m
= 250 s, V
IN
= 0 V,
t
P
= 300 s
V
SD
-
1.0
-
V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
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BTS 3134 D
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN
D
VIN
ID
VDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
Input circuit (ESD protection)
IN
t
V
t
I
IN
t
I
D
t
T
j
Gate Drive
Source/
Ground
Input
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BTS 3134 D
1 Maximum allowable power dissipation
P
tot
= f(T
C
) resp.
P
tot
= f(T
A
) @ R
thJA
=55 K/W
-50
-25
0
25
50
75
100
C
150
T
A
;T
C
0
0.5
1
1.5
2
W
3
P
tot
SMD @ 6cm2
Rthjc = 1.5 K/W
2 On-state resistance
R
ON
=f(T
j
); I
D
=3A; V
IN
=10V
-50
-25
0
25
50
75
100 125 C
175
T
j
0
10
20
30
40
50
60
70
80
m
100
R
DS(on)
typ.
max.
3 On-state resistance
R
ON
=f(T
j
); I
D
=3A; V
IN
=5V
-50
-25
0
25
50
75
100 125 C
175
T
j
0
10
20
30
40
50
60
70
80
90
m
110
R
DS(on)
typ.
max.
4 Typ. input threshold voltage
V
IN(th)
= f(T
j
); I
D
= 0.7 mA; V
DS
= 12V
-50
-25
0
25
50
75
100
C
150
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
V
GS(th)
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BTS 3134 D
5 Typ. transfer characteristics
I
D
=f(V
IN
); V
DS
=12V; T
Jstart
=25C
0
1
2
3
4
5
6
7
8
V
10
V
IN
0
5
10
15
20
A
30
I
D
6 Typ. short circuit current
I
D(lim)
= f(T
j
); V
DS
=12V
Parameter: V
IN
-50
-25
0
25
50
75
100 125 C
175
T
j
0
5
10
15
20
A
30
I
D(SC)
5V
Vin=10V
7 Typ. output characteristics
I
D
=f(V
DS
); T
Jstart
=25C
Parameter: V
IN
0
1
2
3
4
V
6
V
DS
0
5
10
15
20
25
A
35
I
D
Vin=3V
4V
5V
6V
10V
7V
8 Typ. off-state drain current
I
DSS
= f(T
j
)
-50
-25
0
25
50
75
100 125 C
175
T
j
0
1
2
3
4
5
6
7
8
9
A
11
I
DSS
typ.
max.
2004-02-02
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BTS 3134 D
9 Typ. overload current
I
D(lim)
= f(t), V
bb
=12 V, no heatsink
Parameter: T
jstart
0
1
2
3
ms
5
t
0
5
10
15
20
25
30
A
40
I
D(lim)
-40C
25C
85C
150C
10 Typ. transient thermal impedance
Z
thJA
=f(t
p
) @ 6 cm
2
cooling area
Parameter: D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of I
D(lim)
I
D(lim)
= f(t); t
m
= 200s
Parameter: T
Jstart
0
0.1
0.2
0.3
0.4
ms
0.6
t
0
5
10
15
20
25
30
A
40
I
D(lim)
-40C
25C
85C
150C
2004-02-02
Page 9
BTS 3134 D
Package
Ordering Code
P-TO252-3-1
Q67060-S7433-A001
GPT09051
5.4
0.1
-0.10
6.5
+0.15
A
0.5
9.9
6.22
-0.2
1
0.1
0.15
0.8
0.15
0.1
max
per side
0.75
2.28
4.57
+0.08
-0.04
0.9
2.3
-0.10
+0.05
B
min
0.51
0.1
1
+0.08
-0.04
0.5
0...0.15
B
A
0.25
M
0.1
All metal surfaces tin plated, except area of cut.
3x
Page 10
2004-02-02
BTS 3134 D
Revision History :
2004-02-02
Previous version :
2002-09-04
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET
, SIPMOS
are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen, Germany
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page
Subjects (major changes since last revision)
3
V
IN(th)
test conditions from I
D
=0.7mA to I
D
=1.4mA
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