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PROFET Data Sheet BTS 443 P
Infineon Technologies AG
Page 1 of 13
2003-Oct-01
Smart Highside Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump)
Loss of ground protection
Loss of V
bb
protection (with external diode for
charged inductive loads)
Very low standby current
Fast demagnetisation of inductive loads
Electrostatic discharge (ESD) protection
Optimized static electromagnetic compatibility (EMC)
Diagnostic Function
Proportional load current sense (with defined fault signal during thermal shutdown)
Application
Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
All types of resistive, capacitive and inductive loads (no PWM with inductive loads)
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
Overvoltage
protection
+ Vbb
PROFET
OUT
3 & Tab
1, 5
Load GND
Load
Output
Voltage
detection
R
IS
IS
4
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R bb
V
IN
Product Summary
Operating voltage
V
bb(on)
5.0
...
36
V
On-state resistance
R
ON
16
m
Load current (ISO)
I
L(ISO)
25
A
Current limitation
I
L(SCr)
65
A
Package
TO-252-5-1
Data Sheet BTS 443 P
Infineon Technologies AG
Page 2 of 13
2003-Oct-01
Pin Symbol
Function
1 OUT
O
Output to the load. The pin 1 and 5 must be shorted with each
other especially in high current applications!*)
2 IN I
Input, activates the power switch in case of short to ground
Tab/(3) Vbb +
Positive power supply voltage, the tab is shorted to this pin.
4 IS S
Diagnostic feedback providing a sense current proportional to the load
current; high current on failure (see Truth Table on page 6)
5 OUT
O
Output to the load. The pin 1 and 5 must be shorted with each
other especially in high current applications!*)
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
36
V
Supply voltage for full short circuit protection
(see also diagram on page 9) T
j
=-40...150 C:
V
bb
24
1
)
V
Load dump protection V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
= 2
, R
L
= 2.7
, t
d
= 200 ms, IN= low or high
V
Load dump
2
)
60
V
Load current (Short-circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC) TC
25C
P
tot
42
W
Inductive load switch-off energy dissipation,
single pulse U=12V, I=10A, L=3mH
T
j
=150 C:
E
AS
0.15
J
Electrostatic discharge capability (ESD)
(Human Body Model)
acc.
ESD assn. std. S5.1-1993; R=1.5k
; C=100pF
V
ESD
4.0
kV
Current through input pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 7
I
IN
I
IS
+15, -100
+15, -100
mA
1
)
Short circuit is tested with 100m
and 20H
2)
V
Load dump
is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Data Sheet BTS 443 P
Infineon Technologies AG
Page 3 of 13
2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol
Values
Unit
min typ
max
Thermal resistance
chip - case
:
R
thJC
3
)
-- --
1.5
K/W
junction - ambient (free air):
R
thJA
--
80 --
SMD version, device on PCB
4)
:
--
45
--
3)
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
4
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T
j
= -40C...150C, V
bb
= 12 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,5)
V
IN
= 0, I
L
= 5 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
13
25
16
31
m
Output voltage drop limitation at small load
currents (Tab to pin 1,5)
T
j
=-40...150 C:
V
ON(NL)
--
50
--
mV
Nominal load current (Tab to pin 1,5)
ISO Proposal: T
C
=85C, V
ON
0.5V, T
j
150C
SMD
4)
: T
A
=85C, V
ON
0.5V, T
j
150C
I
L(ISO)
I
L(nom)
21
6.2
25
7.6
--
--
A
Turn-on time
IIN
to 90% V
OUT
:
Turn-off time
IIN
to 10% V
OUT
:
R
L
= 2,5
,
T
j
=-40...150 C
t
on
t
off
150
70
--
--
410
410
s
Slew rate on
10 to 30% V
OUT
,
R
L
= 2.5
,
T
j
=-40...150 C
dV /dt
on
0.1 -- 1
V/
s
Slew rate off
70 to 40% V
OUT
, R
L
= 2.5
,
T
j
=-40...150 C
-dV/dt
off
0.1 -- 1
V/
s
Data Sheet BTS 443 P
Infineon Technologies AG
Page 4 of 13
2003-Oct-01
Parameter and Conditions Symbol
Values
Unit
at T
j
= -40C...150C, V
bb
= 12 V unless otherwise specified
min typ
max
Operating Parameters
Operating voltage (V
IN
=0V)
V
bb(on)
5.0
--
36
V
Undervoltage shutdown
5
)
V
bIN(u)
1.5 3.0 4.5
V
Undervoltage restart of charge pump (V
IN
=0V)
V
bb(ucp)
3.0 4.5 6.0
V
Overvoltage protection
6
)
I
bb
=15 mA
V
Z,IN
61
68
--
V
Standby current
T
j
=-40...+25C
:
I
IN
=0
T
j
=150C:
I
bb(off)
--
--
2
4
5
8
A
Protection Functions
7
)
Short circuit current limit (Tab to pin 1,5)
V
ON
=8V, time until limitation max. 300s
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
I
L(SC)
35
35
35
75
65
65
110
110
125
A
Repetitive short circuit current limit,
Tj = Tjt
I
L(SCr)
--
65
--
A
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
8
)
V
ON(CL)
38
42 48
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse Battery
Reverse battery voltage
-V
bb
--
--
20
V
On-state resistance (pin 1,5 to pin 3)
V
bb
= - 8V, V
IN
= 0, I
L
= -5 A, R
IS
= 1 k
, T
j
=25 C:
V
bb
= -12V, V
IN
= 0, I
L
= -5 A, R
IS
= 1 k
, T
j
=25 C:
T
j
=150 C:
R
ON(rev)
--
--
--
16
25
22
19
32
m
Integrated resistor in V
bb
line
R
bb
--
200
--
5)
V
bIN
=V
bb
-V
IN
see diagram on page 11.
6)
see also V
ON(CL)
in circuit diagram on page 7.
7)
Integrated protection functions are designed to prevent IC destruction under fault condition described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
for continuous repetitive operation.
8
) see also page 12.
Data Sheet BTS 443 P
Infineon Technologies AG
Page 5 of 13
2003-Oct-01
Diagnostic Characteristics
Current sense ratio, static on-condition
k
ILIS
=
I
L
:
I
IS
V
ON
<1.5
V, V
IS
<V
OUT
-
5
V, V
bIN
>4.5
V
9)
k
ILIS
--
8200
--
IL = 20A, Tj = -40C:
Tj = +25C:
Tj = +150C:
IL = 5A, Tj = -40C:
Tj = +25C:
Tj = +150C:
IL = 2.5A, Tj = -40C:
Tj = +25C:
Tj = +150C:
IL = 1A, Tj = -40C:
Tj = +25C:
Tj = +150C:
7400
7500
7500
6800
7200
7200
6800
6800
6800
6800
6800
6800
8300
8300
8200
8300
8300
8200
8500
8500
8100
8600
8600
8600
9100
9100
8800
9700
9300
9000
10000
9800
9200
10500
10500
10500
I
IN
= 0
(e.g. during de-energising of inductive loads)
:
-- n.a.
--
Sense current under fault conditions;
V
DS
>1.5V, typ.
T
j
= -40...+150C
:
I
IS,fault
2.5
4 --
mA
Fault-Sense signal delay after negative input slope t
delay(fault)
0.8
ms
Current sense leakage current
I
IN
=
0:
V
IN
=
0, I
L
=
0:
I
IS(LL)
I
IS(LH)
--
--
--
4
0.5
12
A
Current sense settling time to I
IS static
10% after
positive input slope, I
L
= 0
20 A
10
)
T
j
= -40...+150C
:
t
son(IS)
--
--
400
s
Overvoltage protection
I
bb
=
15
mA
T
j
=
-40...+150C:
V
bIS(Z)
61
68
--
V
9)
If
V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation.
10
) not subject to production test, specified by design
Input
Required current capability of input switch
T
j
=-40..+150C:
I
IN(on)
-- 0.7 1.2
mA
Maximum input current for turn-off
T
j
=-40..+150C: I
IN(off)
-- --
50
A
Data Sheet BTS 443 P
Infineon Technologies AG
Page 6 of 13
2003-Oct-01
Truth Table
Input
Current
level
Output
level
Current
Sense
I
IS
Normal
operation
L
H
L
H
0
nominal
Overload
L
H
L
H
0
I
ISfault
Short circuit to GND
L
H
L
L
0
I
ISfault
Overtemperature
L
H
L
L
0
I
ISfault
Short circuit to V
bb
L
H
H
H
0
<nominal
11
Open load
L
H
Z
H
0
0
L = "Low" Level
Z = high impedance, potential depends on external circuit
H = "High" Level
11
) Low ohmic short to
V
bb
may reduce the output current
I
L
and therefore also the sense current
I
IS
.
Terms
PROFET
V
IN
IS
OUT
bb
V
IN
I
IS
I
IN
V
bb
I bb
I L
V
OUT
V
ON
2
4
3
1,5
R
IS
V
IS
V
bIN
R
IN
D
S
V
bIS
Two or more devices can easily be connected in
parallel to increase load current capability.
Data Sheet BTS 443 P
Infineon Technologies AG
Page 7 of 13
2003-Oct-01
Input circuit (ESD protection)
IN
ZD
IN
I
V bb
Rbb
V
Z,IN
V bIN
V IN
ESD-Zener diode: 68 V typ., max 15 mA;
Current sense output
Normal operation
IS
IS
R
ZD
IS
V
Vbb
Z,IS
V
Rbb
IIS
IIS,fault
V
Z,IS
=
68
V
(typ.), R
IS
=
1
k
nominal (or 1
k
/n, if n
devices are connected in parallel). I
S
= I
L
/k
ilis
can be
only driven by the internal circuit as long as
V
out
- V
IS
>
5V. If you want to measure load currents
up to I
L(M)
, R
IS
should be less than
ilis
M
L
bb
K
I
V
V
/
5
)
(
-
.
Note: For large values of R
IS
the voltage V
IS
can reach
almost V
bb
. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
+ V
bb
OUT
PROFET
V
Z1
V
ON
V
ON
is clamped to V
ON(Cl)
=
42
V typ.
Overvoltage protection of logic part
+ V
bb
V
OUT
IN
bb
R
Signal GND
Logic
PROFET
V
Z,IS
R
IS
IN
R
IS
V
Z,IN
R
V
V
Z,VIS
R
bb
=
200
typ
.
,
V
Z,IN
= V
Z,IS
=
68
V
typ.,
R
IS
=
1
k
nominal. Note that when overvoltage exceeds 73
V
typ.
a voltage above 5V can occur between IS and GND, if
R
V
, V
Z,VIS
are not used.
Data Sheet BTS 443 P
Infineon Technologies AG
Page 8 of 13
2003-Oct-01
Reversave
(
Reverse battery protection)
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power
Signal
Vbb
-
Power
Transistor
IN
R
bb
R
D
R
V
1k
, R
IS
=
1
k
nominal. Add
R
IN
for reverse
battery protection in applications with
V
bb
above 16V;
recommended value:
1
R
IN
+
1
R
IS
+
1
R
V
=
V
V
A
bb
12
|
|
,
05
.
0
-
To minimise power dissipation at reverse battery
operation, the summarised current into the IN and IS
pin should be about 50mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through R
IS
and R
V.
Since the current through R
bb
generates additional
heat in the device, this has to be taken into account in
the overall thermal considerations.
V
bb
disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (V
ZL
<
73 V or
V
Zb
<
30 V if R
IN
=0). For higher clamp voltages
currents at IN and IS have to be limited to
250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
V
bb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
V
bb
V
Zb
Note that there is no reverse battery protection when
using a diode without additional Z-diode V
ZL
, V
Zb
.
Version c:
Sometimes a necessary voltage clamp is given by non
inductive loads R
L
connected to the same switch and
eliminates the need of clamping circuit:
PROFET
V
IN
OUT
IS
bb
V
bb
R
L
Data Sheet BTS 443 P
Infineon Technologies AG
Page 9 of 13
2003-Oct-01
Inductive load switch-off energy
dissipation
PROFET
V
IN
OUT
IS
bb
E
E
E
EAS
bb
L
R
ELoad
L
RL
{
Z L
RIS
I
IN
Vbb
i (t)
L
Energy stored in load inductance:
E
L
=
1/2
L
I
2
L
While demagnetising load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
=
I
L
L
2
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
R
L
|V
OUT(CL)
|
)
The device is not suitable for permanent PWM with
inductive loads if active clamping occurs every cycle.
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150C, Vbb =
12
V, RL =
0
L[mH]
0.01
0.1
1
10
100
0
25
50
75
100
IL [A]
Data Sheet BTS 443 P
Infineon Technologies AG
Page 10 of 13
2003-Oct-01
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
I
IN
t
V
OUT
I
L
I
IS
t
son(IS)
t
t
slc(IS)
Load 1
Load 2
soff(IS)
t
t
t
on
off
slc(IS)
90%
dV/dton
dV/dtoff
10%
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 1b: typical behaviour of sense output:
I
L(lim) = 20A
I
S
I
L
I
IS,fault >= 2.5mA
Figure 2a: Switching motors and lamps:
I
IN
t
V
OUT
I
IL
I
IS
Sense current above IIS,fault can occur at very high
inrush currents.
Figure 2b: Switching an inductive load:
I
IN
t
V
OUT
I
L
I
IS
Data Sheet BTS 443 P
Infineon Technologies AG
Page 11 of 13
2003-Oct-01
Figure 3a: Short circuit:
t
I
IIS
IN
L
L(SCr)
I
I
L(SCp)
IISfault
Figure 4a: Overtemperature
Reset if T
j
<T
jt
I
IN
t
I
IS
V
OUT
T
j
Auto Restart
IIS,fault
Figure 5a: Undervoltage restart of charge pump,
overvoltage clamp
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
OUT
V
bIN(ucp)
V
IN
= 0
I
IN
= 0
V
ON(CL)
V
ON(CL)
V
bIN(u)
V
bIN(u)
dynamic, short
Undervoltage
not below
V
bb
Data Sheet BTS 443 P
Infineon Technologies AG
Page 12 of 13
2003-Oct-01
Figure 6a: Current sense versus load current:
0
1.0
2.0
0
5
10
15
20
I L
[A]
[mA]
IIS
Figure 6b: Current sense ratio
12
)
:
0
8200
0
2.5
10
20
IL
[A]
kILIS
5
12
)
This range for the current sense ratio refers to all
devices. The accuracy of the k
ILIS
can be raised by
means of calibration the value of k
ILIS
for every
single device.
Figure 7a: Output voltage drop versus load current:
0.0
0.05
0.1
0
1
2
3
4
5
6
7
8
I L
[A]
[V]
VON
ON(NL)
V
ON
R
Data Sheet BTS 443 P
Infineon Technologies AG
Page 13 of 13
2003-Oct-01
Package and Ordering Code
All dimensions in mm
D-Pak-5 Pin: TO-252-5-1
Sales Code
BTS443P
Ordering code
Q67060-S7404-A 2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
GPT09161
5.4
0.1
-0.10
6.5
+0.15
A
0.5
9.9
6.22
-0.2
1
0.1
0.15
0.8
0.15 max
0.1
per side
5x0.6
1.14
4.56
+0.08
-0.04
0.9
2.3
-0.10
+0.05
B
0.51 min
0.1
1
+0.08
-0.04
0.5
0...0.15
B
A
0.25
M
0.1
All metal surfaces tin plated, except area of cut.
(4.17)
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