IDC05S60C
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
2
nd
generation thinQ!
TM
SiC Schottky Diode
Applications:
SMPS, PFC, snubber
FEATURES:
Revolutionary semiconductor material -
Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
No forward recovery
High surge current capability
A
C
Chip Type
V
BR
I
F
Die Size
Package
IDC05S60C
600V
5A
1.45 x 1.162 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
1.45x 1.162
Anode pad size
1.213 x 0.925
mm
Area total / active
1.68 / 1.22
mm
2
Thickness
355
m
Wafer size
75
mm
Flat position
0
deg
Max. possible chips per wafer
2182 pcs
Passivation frontside
Photoimide
Anode metalization
3200 nm Al
Cathode metalization
1400 nm Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Al,
350m
Reject Ink Dot Size
0.3 mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23C
IDC05S60C
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
DC blocking voltage
V
DC
600
V
Continuous forward current limited by
T
jmax
I
F
5
Surge non repetitive forward current
sine halfwave
I
F , S M
T
C
=25
C, t
P
=10 ms
42
Repetitive peak forward current
limited by T
jmax
I
F,RM
T
C
= 100
C, T
j
= 1 5 0
C,
D = 0 . 1
21
Non-repetitive peak forward current
I
F,max
T
C
=25
C, tp=10s
180
A
Operating junction and storage
temperature
T
j
, T
s t g
-55...+175
C
Static Electrical Characteristics
(tested on chip), Tj=25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse current
I
R
V
R
=600V
T
j
=25
C
0.6
70
A
Diode forward voltage
V
F
I
F
= 5A
T
j
=25
C
1.5
1.7
V
Dynamic Electrical Characteristics
, at T
j
= 25
C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Total capacitive charge
Q
C
T
j
= 150 C
12
nC
Switching time
1)
t
c
I
F
<=I
F , m a x
di/dt=200A/
s
V
R
=400V
T
j
= 150 C
<10
ns
V
R
= 1V
240
V
R
=30 0V
30
Total capacitance
C
f=1MHz
V
R
= 600V
30
pF
1)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection
.
IDC05S60C
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
CHIP DRAWING:
IDC05S60C
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES
IDT05S60C
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
Infineon Technologies AG 2000
All Rights Reserved
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in question please contact your nearest Infineon Technologies Office.
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