IDT12S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
No reverse recovery/ No forward recovery
No temperature influence on the switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 5mA
2)
thinQ! 2G Diode specially designed for fast switching applications like:
CCM PFC
Motor Drives
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous forward current
I
F
T
C
<140 C
12
A
RMS forward current
I
F,RMS
f =50 Hz
18
Surge non-repetitive forward current,
sine halfwave
I
F,SM
T
C
=25 C, t
p
=10 ms
98
Repetitive peak forward current
I
F,RM
T
j
=150 C,
T
C
=100 C, D =0.1
49
Non-repetitive peak forward current
I
F,max
T
C
=25 C, t
p
=10 s
410
it value
i
2
dt
T
C
=25 C, t
p
=10 ms
48
A
2
s
Repetitive peak reverse voltage
V
RRM
600
V
Diode ruggedness dv/dt
dv/ dt
V
R
=0...480V
50
V/ns
Power dissipation
P
tot
T
C
=25 C
115
W
Operating and storage temperature
T
j
, T
stg
-55 ... 175
C
Mounting torque
M3 and M3.5 screws
60
Ncm
Value
V
DC
600
V
Q
c
30
nC
I
F
12
A
Product Summary
PG-TO220-2-2
Type
Package
Marking
Pin 1
Pin 2
IDT12S60C
PG-TO220-2-2
D12S60C
C
A
Rev. 2.0
page 1
2006-03-14
IDT12S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.3
K/W
Thermal resistance,
junction - ambient
R
thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm(0.063 in.) from
case for 10s
-
-
260
C
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.16 mA
600
-
-
V
Diode forward voltage
V
F
I
F
=12 A, T
j
=25 C
-
1.5
1.7
I
F
=12 A, T
j
=150 C
-
1.7
2.1
Reverse current
I
R
V
R
=600 V, T
j
=25 C
-
1.5
160
A
V
R
=600 V, T
j
=150 C
-
6
1600
AC characteristics
Total capacitive charge
Q
c
-
30
-
nC
Switching time
3)
t
c
-
-
<10
ns
Total capacitance
C
V
R
=1 V, f =1 MHz
-
530
-
pF
V
R
=300 V, f =1 MHz
-
70
-
V
R
=600 V, f =1 MHz
-
70
-
4)
Only capacitive charge occuring, guaranteed by design.
Values
V
R
=400 V, I
F
I
F,max
,
di
F
/dt =200 A/s,
T
j
=150 C
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
Rev. 2.0
page 2
2006-03-14
IDT12S60C
1 Power dissipation
2 Diode forward current
P
tot
=f(T
C
)
I
F
=f(T
C
); T
j
175 C
parameter: R
thJC(max)
parameter. R
thJC(max)
; V
F(max)
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I
F
=f(V
F
); t
p
=400 s
mode
parameter: T
j
I
F
=f(V
F
); t
p
=400 s; parameter: T
j
0
20
40
60
80
100
120
25
50
75
100
125
150
175
200
T
C
[C]
P
tot
[W]
-55 C
25 C
100 C
150 C
175 C
0
10
20
30
40
0
1
2
3
4
V
F
[V]
I
F
[A]
0
5
10
15
20
25
30
35
25
50
75
100
125
150
175
200
T
C
[C]
I
F
[A]
-55 C
25 C
100 C
150 C
175 C
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
V
F
[V]
I
F
[A]
Rev. 2.0
page 3
2006-03-14
IDT12S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I
R
=f(V
R
)
P
F,AV
=f(I
F
), T
C
=100 C, parameter: D =t
p
/T
parameter: T
j
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z
thJC
=f(t
p
)
C =f(V
R
); T
C
=25 C, f =1 MHz
parameter: D =t
p
/T
10
3
10
2
10
1
10
0
10
-1
0
100
200
300
400
500
600
700
V
R
[V]
C
[pF]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
10
0
10
-1
10
-2
t
P
[s]
Z
thJ
C
[K/W]
-55 C
25 C
100 C
150 C
175 C
10
2
10
1
10
0
10
-1
10
-2
10
-3
100
200
300
400
500
600
V
R
[V]
I
R
[A]
0.1
0.2
0.5
1
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
I
F(AV)
[A]
P
F(AV
)
[W]
Rev. 2.0
page 4
2006-03-14
IDT12S60C
9 Typ. C stored energy
10 Typ. capacitance charge vs. current slope
E
C
=f(V
R
)
Q
C
=f(di
F
/dt )
4)
; T
j
=150 C; I
F
I
F,max
0
10
20
30
40
100
400
700
1000
di
F
/dt [A/s]
Q
c
[nC]
0
5
10
15
0
100
200
300
400
500
600
V
R
[V]
E
c
[C]
Rev. 2.0
page 5
2006-03-14
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