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Электронный компонент: Q62702-G0092

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BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Pin Configuration
(circuit Diagram)
Package
BGC420
42s
Q62702-G0092
see below
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V 4.5V)
ESD: Electrostatic discharge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Symbol
Unit
Device current
I
CC
15
mA
Device voltage
Vcc
4.5
V
Total power dissipation, T
s
110C
1)
P
tot
68
mW
Control voltage
Vc
Vcc+0.5
V
Input Current for pin 1
Ir
380
A
Junction temperature
T
j
150
C
Ambient temperature range
T
A
-65...+150
C
Storage temperature range
T
stg
-65...+150
C
Thermal Resistance
Junction-soldering point
1)
R
th JS
270
K/W
1)TS is measured on the Ground lead at the soldering point to the pcb
.
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25C, Vcc=3V, I
CC
7mA unless noted
Symbol
Parameter
Unit
Min
Typ
Max
Gp
Power Gain (
S
21
2
)
f=900MHz
f=1.8GHz
dB
17.5
14.5
19
16
NF
Noise Figure (in 50
W
System)
f=900MHz
f=1.8GHz
dB
1.3
1.5
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
f=1.8GHz
dBm
1
1
IP
3
Third Order Intercept Point
f=900MHz
(Output,
G
Opt
)
f=1.8GHz
dBm
15
15
RL
in
Input Return Loss
f=900MHz
f=1.8GHz
dB
7
9
RL
out
Output Return Loss
f=900MHz
f=1.8GHz
dB
4
7
t
on
On Switching Time
3)
s
3.7
t
off
Off Switching Time
3)
s
2.5
I
leak
Leakage Current In Sleep Mode
A
<10
I
VcOn
Controll Pin (Vc) Current in Active Mode
2)
A
35
I
VcOff
Controll Pin (Vc) Current in Sleep Mode
2)
nA
-60
V
cmin
Minimum Voltage at Vc for Sleep Mode
V
V
cc
- 0.3V
V
cmax
Maximum Voltage at Vc for Active Mode
V
0V+0.3V
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40C
= +27
C
= +85
C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x = 5 6
R x = 8 2
R x = 1 2 0
R x = 6 8 0
12
10
8
6
4
2
0
1
2
3
4
14
16
R x = 3 3
Device Current
versus Device Voltage
=
-40C
= +27
C
= +85
C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
To provide low frequency stability C2 should be 10 times C3.
2)
Be aware that also coupling capacitors determine the switching times.
3)
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
4)
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3V,
DC
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit