2003-03-26
Page 1
Final data
SN7002N
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
60
V
R
DS(on)
5
I
D
0.2
A
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
SOT-23
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
sSN
sSN
Type
Package
Ordering Code
Tape and Reel Information
SN7002N
SOT-23
Q67042-S4185
E6327: 3000 pcs/reel
SN7002N
SOT-23
Q67042-S4192
E6433: 10000 pcs/reel
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
0.2
0.16
A
Pulsed drain current
T
A
=25C
I
D puls
0.8
Reverse diode dv/dt
I
S
=0.2A, V
DS
=48V, di/dt=200A/s, T
jmax
=150C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Power dissipation
T
A
=25C
P
tot
0.36
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2003-03-26
Page 2
Final data
SN7002N
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - ambient
at minimal footprint
R
thJA
-
-
350
K/W
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250A
V
(BR)DSS
60
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=26A
V
GS(th)
0.8
1.4
1.8
Zero gate voltage drain current
V
DS
=60V, V
GS
=0, T
j
=25C
V
DS
=60V, V
GS
=0, T
j
=150C
I
DSS
-
-
-
-
0.1
5
A
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
-
-
10
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.17A
R
DS(on)
-
3.9
7.5
Drain-source on-state resistance
V
GS
=10V, I
D
=0.5A
R
DS(on)
-
2.5
5
2003-03-26
Page 3
Final data
SN7002N
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.16A
0.09
0.17
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
-
34
45
pF
Output capacitance
C
oss
-
7.2
9.6
Reverse transfer capacitance C
rss
-
2.8
4.2
Turn-on delay time
t
d(on)
V
DD
=30V, V
GS
=10V,
I
D
=0.5A, R
G
=6
-
2.4
3.6
ns
Rise time
t
r
-
3.2
4.8
Turn-off delay time
t
d(off)
-
5.3
8
Fall time
t
f
-
3.6
5.4
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=48V, I
D
=0.5A
-
0.14
0.21 nC
Gate to drain charge
Q
gd
-
0.42
0.63
Gate charge total
Q
g
V
DD
=48V, I
D
=0.5A,
V
GS
=0 to 10V
-
1
1.5
Gate plateau voltage
V
(plateau) V
DD
=48V, I
D
= 0.5 A
-
4.5
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
0.2
A
Inv. diode direct current, pulsedI
SM
-
-
0.8
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= IS
-
0.83
1.2
V
Reverse recovery time
t
rr
V
R
=30V, I
F=
l
S
,
di
F
/dt=100A/s
-
14.2
21.3 ns
Reverse recovery charge
Q
rr
-
5.9
8.8
nC
2003-03-26
Page 4
Final data
SN7002N
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
SN7002N
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
A
0.22
SN7002N
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
10
0
10
1
10
2
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
SN7002N
I
D
R
DS(on)
=
V
DS
/ I
D
DC
10 ms
1 ms
tp = 200.0s
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
SN7002N
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2003-03-26
Page 5
Final data
SN7002N
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 C, V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VDS
0
0.125
0.25
0.375
0.5
0.625
0.75
A
1
I D
10V
7V
6V
5V
4.5V
4.0V
3.7V
3.5V
3.0V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 C, V
GS
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A
1
ID
0
0.75
1.5
2.25
3
3.75
4.5
5.25
6
7.5
R
DS(on)
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: T
j
= 25 C
0
0.8
1.6
2.4
3.2
4
4.8 V
6
VGS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
1
I D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 C
0
0.2
0.4
0.6
0.8
A
1.1
ID
0
0.05
0.1
0.15
0.2
0.25
0.3
S
0.4
gfs
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