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Электронный компонент: V23875-T3261-C110

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Data Sheet
1
2003-03-04
High Power Triport-BIDI
Optical Triplexer Component
1310 nm Tx / 1490 nm Digital Rx with 622 Mbit/s, 3.3 V TIA /
1555 nm Analog Video Rx
Preliminary Data
Fiber Optics
BIDI
is a registered trademark of Infineon Technologies.
Symbolic picture only the actual pin layout may be different.
V23875-T3261-C110
The V23875-T3261-C110 is an optical triplexer
component designed for full-duplex digital
communication over a single fiber with an additional
analog video receiver. The single fiber concept saves
overall system costs by eliminating one fiber,
allowing for doubling of capacity without installing
new fibers, and simplifying fiber management.
Features
Integrated WDM filters for Tx/Rx
1
/Rx
2
operation at
1310/1490/1555 nm
1310 nm FP laser diode transmitter suitable for
data rates up to 1.25 Gbit/s
1490 nm PIN diode digital receiver with integrated 622 Mbit/s, 3.3 V TIA
1555 nm PIN diode analog video receiver
40C to +85C operating temperature range
Single-mode fiber pigtail with different connector options
Class 3B laser product
Hermetically sealed Tx and Rx sub-components for high reliability
Applications
Access Networks, e.g. media converters for Fiber-In-The-Loop (FITL), Point-to-Point
(P2P), and Passive Optical Networks (PON)
V23875-T3261-C110
Pin Configuration
Data Sheet
2
2003-03-04
Pin Configuration
Figure 1
Transmitter
Figure 2
Receiver
I
Figure 3
Receiver
II
1
4
2
3
MD
File: 6304
LD
Pinning
Transmitter (bottom view)
1
2
3
4
2.54 mm
File: 6305
Receiver
(bottom view)
1
2
3
4
2.54 mm
1
Out+
V
CC
Out
-
Pin
Pre-
amp
3
4
2
Pinning
2
File: 6303
1
3
Pinning
Receiver
(bottom view)
1
2
3
2.54 mm
V23875-T3261-C110
Technical Data
Data Sheet
3
2003-03-04
Technical Data
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Module
Operating temperature range at case
T
C
40
85
C
Storage temperature range
T
stg
40
85
C
Soldering temperature (
t
max
= 10 s,
2 mm distance from bottom edge of case)
T
S
260
C
Laser Diode
Direct forward current
I
F max
120
mA
Reverse voltage
V
R
2
V
Monitor Diode
Reverse voltage
V
R
10
V
Forward current
I
F
2
mA
Receiver Diode
Reverse voltage
V
R
10
V
Forward current
I
F
2
mA
Optical power into the optical port
P
port
3
mW
V23875-T3261-C110
Technical Data
Data Sheet
4
2003-03-04
The electro-optical characteristics described in the following tables are only valid for use
within the specified temperature range from 40C up to 85C unless otherwise
specified.
Transmitter Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
Optical output power,
assuming 50% duty cycle
P
max
0
dBm
Maximum forward current
I
max
120
mA
Emission wavelength center of range
P
F
= 1 mW
l
trans
1260
1360
nm
Spectral width
Dl
5
nm
Rise time (10% - 90%)
t
r
500
ps
Fall time (10% - 90%)
t
f
500
ps
Threshold current
I
th
5
45
mA
Radiant power at
I
th
P
th
50
W
Slope efficiency (0.1 to 1 mW)
h
35
150
mW/A
Forward voltage
P
F
= 1 mW
V
F
1.5
V
Differential series resistance
R
S
8
W
Monitor Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
Dark current
P
opt
= 0 mW, UR = 5 V
I
R
500
nA
Photocurrent
P
opt
= 1 mW, UR = 5 V
I
P
100
1500
A
Capacitance
V
R
= 5 V,
f
= 1 MHz
C
5
15
pF
Tracking error
V
R
= 5 V
TE
1.5
1.5
dB
V23875-T3261-C110
Technical Data
Data Sheet
5
2003-03-04
Receiver
I
Characteristics with Preamp
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
DC-Characteristics
Supply voltage
V
CC
3
3.3
3.6
V
Supply current
I
CC
26
mA
AC-Characteristics
Optical sensitivity
(BER
10
10
, PN23,
ER
10 dB)
l
= 1480...1500 nm
S
30
dBm
Linear bandwidth (3 dB)
BW
550
MHz
Optical overload (average)
P
max
1
dBm
Transimpedance (differential)
R
T
70
k
W
Output resistance
R
out
48
60
72
W
Receiver
II
Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Spectral responsivity
V
R
= 5 V,
P
opt
= 1 W
l
= 1550...1560 nm
S
0.7
A/W
Dark current
V
R
= 5 V,
P
opt
= 0 mW
I
D
50
nA
Total capacitance
V
R
= 5 V,
f
= 1 MHz,
P
opt
= 0 mW
C
1
pF
Rise and fall time
t
r
;
t
f
500
ps
Linearity
opt. carrier
P
cf1
= 3 dBm and
P
cf2
= 3 dBm;
modulated with
f
1
= 400 MHz;
f
2
= 450 MHz with modulation
index of min. 0.6
IM
70
dBc