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Электронный компонент: IN74ACT00

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TECHNICAL DATA
7
Quad 2-Input NAND Gate
High-Speed Silicon-Gate CMOS
The IN74ACT00 is identical in pinout to the LS/ALS00,
HC/HCT00. The IN74ACT00 may be used as a level converter for
interfacing TTL or NMOS outputs to High Speed CMOS inputs.
ћ
TTL/NMOS Compatible Input Levels
ћ
Outputs Directly Interface to CMOS, NMOS, and TTL
ћ
Operating Voltage Range: 4.5 to 5.5 V
ћ
Low Input Current: 1.0
A; 0.1
A @ 25
њ
C
ћ
Outputs Source/Sink 24 mA
IN74ACT00
ORDERING INFORMATION
IN74ACT00N Plastic
IN74ACT00D SOIC
T
A
= -40
њ
to 85
њ
C for all
packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
IN74ACT00
8
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Sink/Source Current, per Pin
50
mA
I
CC
DC Supply Current, V
CC
and GND Pins
50
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
њ
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
њ
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
њ
C from 65
њ
to 125
њ
C
SOIC Package: : - 7 mW/
њ
C from 65
њ
to 125
њ
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
J
Junction Temperature (PDIP)
140
њ
C
T
A
Operating Temperature, All Package Types
-40
+85
њ
C
I
OH
Output Current - High
-24
mA
I
OL
Output Current - Low
24
mA
t
r
, t
f
Input Rise and Fall Time
*
(except Schmitt Inputs)
V
CC
=4.5 V
V
CC
=5.5 V
0
0
10
8.0
ns/V
*
V
IN
from 0.8 V to 2.0 V
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND