TECHNICAL DATA
118
Quad 3-State Noninverting Buffers
High-Performance Silicon-Gate CMOS
The IN74HC125A is identical in pinout to the LS/ALS125. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LS/ALSTTL outputs.
The IN74HC125A noninverting buffers are designed to be used with 3-
state memory address drivers, clock drivers, and other bus-oriented
systems. The devices have four separate output enables that are active-low.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0
A
High Noise Immunity Characteristic of CMOS Devices
IN74HC125A
ORDERING INFORMATION
IN74HC125AN Plastic
IN74HC125AD SOIC
T
A
= -55
to 125
C for all packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
Output
A
OE
Y
H
L
H
L
L
L
X
H
Z
X = don't care
Z = high impedance
IN74HC125A
119
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Current, per Pin
35
mA
I
CC
DC Supply Current, V
CC
and GND Pins
75
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65
to 125
C
SOIC Package: : - 7 mW/
C from 65
to 125
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
t
r
, t
f
Input Rise and Fall Time (Figure 1)
V
CC
=2.0 V
V
CC
=4.5 V
V
CC
=6.0 V
0
0
0
1000
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
IN74HC125A
120
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
25
C
to
-55
C
85
C
125
C
Unit
V
IH
Minimum High-Level
Input Voltage
V
OUT
= V
CC
-0.1 V
I
OUT
20
A
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low -
Level Input Voltage
V
OUT
=0.1 V
I
OUT
20
A
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
OH
Minimum High-Level
Output Voltage
V
IN
=V
IH
I
OUT
20
A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
IN
=V
IH
I
OUT
6.0 mA
I
OUT
7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low-Level
Output Voltage
V
IN
=V
IL
I
OUT
20
A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
=V
IL
I
OUT
6.0 mA
I
OUT
7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
IN
Maximum Input
Leakage Current
V
IN
=V
CC
or GND
6.0
0.1
1.0
1.0
A
I
OZ
Maximum Three-
State Leakage
Current
Output in High-Impedance
State
V
IN
=V
IL
or V
IH
V
IN
=V
CC
or GND
6.0
0.5
5.0
10
A
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
=V
CC
or GND
I
OUT
=0
A
6.0
4.0
40
160
A
IN74HC125A
121
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF,Input t
r
=t
f
=6.0 ns)
V
CC
Guaranteed Limit
Symbol
Parameter
V
25
C
to
-55
C
85
C
125
C
Unit
t
PLH
, t
PHL
Maximum Propagation Delay, Input A to
Output Y (Figures 1 and 3)
2.0
4.5
6.0
90
18
15
115
23
20
135
27
23
ns
t
PLZ
, t
PHZ
Maximum Propagation Delay, Output Enable toY
(Figures 2 and 4)
2.0
4.5
6.0
120
24
20
150
30
26
180
36
31
ns
t
PZL
, t
PZH
Maximum Propagation Delay, Output Enable toY
(Figures 2 and 4)
2.0
4.5
6.0
90
18
15
115
23
20
135
27
23
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
C
IN
Maximum Input Capacitance
-
10
10
10
pF
C
OUT
Maximum Three-State Output Capacitance
(Output in High-Impedance State)
-
15
15
15
pF
Power Dissipation Capacitance (Per Buffer)
Typical @25
C,V
CC
=5.0 V
C
PD
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC
2
f+I
CC
V
CC
45
pF
Figure 1. Switching Waveforms Figure 2. Switching Waveforms
IN74HC125A
122
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/4 of the Device)
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