ChipFind - документация

Электронный компонент: IN74HC20N

Скачать:  PDF   ZIP
IN74HC20
1
D
UAL
4-I
NPUT
NAND
G
ATE
High-Performance Silicon-Gate CMOS
The IN74HC20 is identical in pinout to the LS/ALS20. The
device inputs are compatible with standard CMOS outputs; with
pullup resistors, they are compatible with LS/ALSTTL outputs.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 A
High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
IN74HC20N Plastic
IN74HC20D SOIC
T
A
= -55
to 125 C for all
packages
PIN ASSIGNMENT
NC = NO CONNECTION
FUNCTION TABLE
Inputs Output
A B C D Y
L X X X H
X L X X H
X X L X H
X X X L H
H H H H
L
X = don't care
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PINS 3,11 = NO CONNECTION
IN74HC20
2
MAXIMUM RATINGS
*
Symbol Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Current, per Pin
25
mA
I
CC
DC Supply Current, V
CC
and GND Pins
50
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10
Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65 to 125C
SOIC Package: : - 7 mW/
C from 65 to 125C

RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to
GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
t
r
, t
f
Input Rise and Fall Time (Figure
1)
V
CC
=2.0 V
V
CC
=4.5 V
V
CC
=6.0 V
0
0
0
1000
500
400
ns


This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V
CC
). Unused outputs must be left open.
IN74HC20
3
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
V
CC
Guaranteed
Limit
Symbol Parameter
Test
Conditions V
25
C
to
-55
C
85
C
125
C
Unit
V
IH
Minimum High-
Level Input
Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20 A
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low -
Level Input
Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20 A
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High-
Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OUT
20 A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
IN
= V
IH
or V
IL
I
OUT
4.0 mA
I
OUT
5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low-
Level Output
Voltage
V
IN
=V
IH
I
OUT
20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
=V
IH
I
OUT
4.0 mA
I
OUT
5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
IN
Maximum
Input
Leakage Current
V
IN
=V
CC
or GND
6.0
0.1
1.0
1.0
A
I
CC
Maximum
Quiescent Supply
Current
(per Package)
V
IN
=V
CC
or GND
I
OUT
=0
A
6.0 2.0 20 40
A
IN74HC20
4
AC ELECTRICAL CHARACTERISTICS(C
L
=50pF,Input t
r
=t
f
=6.0 ns)
V
CC
Guaranteed Limit
Symbol Parameter V
25
C
to
-55
C
85C 125
C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A
,B,C or D to Output Y (Figures 1 and 2)
2.0
4.5
6.0
90
18
15
115
23
20
135
27
23
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any
Output (Figures 1 and 2)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
IN
Maximum Input Capacitance
-
10
10
10
pF
Power Dissipation Capacitance (Per
Gate)
Typical @25
C,V
CC
=5.0 V
C
PD
Used to determine the no-load dynamic
power consumption:
P
D
=C
PD
V
CC
2
f+I
CC
V
CC
26 pF
Figure 1. Switching Waveforms
Figure 2. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/2 of the Device)