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Электронный компонент: IN74HC640A

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IN74HC640A
1
O
CTAL
3-S
TATE
I
NVERTING
B
US
T
RANSCEIVER
High-Performance Silicon-Gate CMOS
The IN74HC640A is identical in pinout to the LS/ALS640. The
device inputs are compatible with standard CMOS outputs; with
pullup resistors, they are compatible with LS/ALSTTL outputs.
The IN74HC640A is a 3-state transceiver that is used for 2-
way asynchronous communication between data buses. The
device has an active-low Output Enable pin, which is used to
place the I/O ports into high-impedance states. The Direction
control determines whether data flows from A to B or from B to A.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 A
High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
IN74HC640AN Plastic
IN74HC640ADW SOIC
T
A
= -55
to 125 C for all
packages
FUNCTION TABLE
Control Inputs
Output
Enable
Direction Operation
L L
Data
Transmitted
from Bus B to Bus
A (inverted)
L H
Data
Transmitted
from Bus A to Bus
B (inverted)
H X
Buses
Isolated
(High Impedance
State)
X = don't care
LOGIC DIAGRAM
PIN 20=V
CC
PIN 10 = GND
PIN ASSIGNMENT
IN74HC640A
2
MAXIMUM RATINGS
*
Symbol Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Current, per Pin
35
mA
I
CC
DC Supply Current, V
CC
and GND Pins
75
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10
Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65 to 125C
SOIC Package: : - 7 mW/
C from 65 to 125C

RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
t
r
, t
f
Input Rise and Fall Time (Figure 1) V
CC
=2.0 V
V
CC
=4.5 V
V
CC
=6.0 V
0
0
0
1000
500
400
ns


This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V
CC
). Unused outputs must be left open. I/O pins must be connected to a properly terminated line
or bus.
IN74HC640A
3
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
V
CC
Guaranteed
Limit
Symbol Parameter
Test
Conditions
V 25
C
to
-55
C
85
C
125
C
Unit
V
IH
Minimum
High-
Level Input
Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20 A
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low -
Level Input
Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20 A
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum
High-
Level Output
Voltage
V
IN
=V
IH
or V
IL
I
OUT
20 A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
IN
=V
IH
or V
IL
I
OUT
6.0 mA
I
OUT
7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum
Low-
Level Output
Voltage
V
IN
= V
IL
or V
IH
I
OUT
20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IL
or V
IH
I
OUT
6.0 mA
I
OUT
7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
IN
Maximum
Input
Leakage Current
V
IN
=V
CC
or GND, Pin 1
or 19
6.0
0.1
1.0
1.0
A
I
OZ
Maximum
Three-
State Leakage
Current
Output in High-
Impedance State
V
IN
= V
IL
or V
IH
V
OUT
=V
CC
or GND
6.0
0.5
5.0
10
A
I
CC
Maximum
Quiescent Supply
Current
(per Package)
V
IN
=V
CC
or GND
I
OUT
=0
A
6.0 4.0 40 160
A
IN74HC640A
4
AC ELECTRICAL CHARACTERISTICS(C
L
=50pF,Input t
r
=t
f
=6.0 ns)
V
CC
Guaranteed Limit
Symbol Parameter V
25
C
to
-55
C
85C 125
C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, A to B , B
to A (Figures 1 and 3)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay , Direction
or Output Enable to A or B (Figures 2
and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
t
PZL
,
t
PZH
Maximum Propagation Delay , Direction
or Output Enable to A or B (Figures 2
and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any
Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
C
IN
Maximum Input Capacitance (Pin 1 or
Pin 19)
- 10 10 10 pF
C
OUT
Maximum Three-State I/O Capacitance
(Output in High-Impedance State)
- 15 15 15 pF
Power Dissipation Capacitance (Per
Transceiver Channel)
Typical @25
C,V
CC
=5.0 V
C
PD
Used to determine the no-load dynamic
power consumption:
P
D
=C
PD
V
CC
2
f+I
CC
V
CC
40 pF
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
IN74HC640A
5
Figure 3. Test Circuit
Figure 4. Test Circuit

EXPANDED LOGIC DIAGRAM