TECHNICAL DATA
1
Hex Unbuffered Inverter
High-Performance Silicon-Gate CMOS
The IN74HCU04A is identical in pinout to the LS/ALS04. The
device inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LS/ALSTTL outputs.
This device consists of six single-stage inverters. These inverters
are well suited for use as oscillators, pulse shapers, and in many other
applications requiring a high-input impedance amplifier. For digital
applications, the HC04 is recommended.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V; 2.5 to 6 V in Oscillator
Configurations.
Low Input Current: 1.0
A
High Noise Immunity Characteristic of CMOS Devices
IN74HCU04
ORDERING INFORMATION
IN74HCU04N
Plastic
IN74HCU04D
SOIC
IZ74HCU04 Chip
T
A
= -55
to 125
C for all packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
1
2
3
5
4
6
7
V CC
14
13
12
11
10
8
9
GND
A1
Y1
A2
Y2
A3
Y3
A6
Y6
A5
Y5
A4
Y4
FUNCTION TABLE
Inputs
Output
A
Y
L
H
H
L
IN74HCU04
2
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Current, per Pin
25
mA
I
CC
DC Supply Current, V
CC
and GND Pins
50
mA
P
D
Power Dissipation in Still Air, Plastic DIP **
SOIC Package **
750
500
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
** Derating - Plastic DIP: - 10 mW/
C from 65
to 125
C
SOIC Package: : - 7 mW/
C from 65
to 125
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
t
r
, t
f
Input Rise and Fall Time (Figure 1)
V
CC
=2.0
V
CC
=4.5
V
CC
=6.0
-
1000
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
IN74HCU04
3
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
25
C to
-55
C
85
C
125
C
Unit
V
IH
Minimum High-
Level Input Voltage
V
OUT
=0.1 V *
I
OUT
20
A
2.0
4.5
6.0
1.7
3.6
4.8
1.7
3.6
4.8
1.7
3.6
4.8
V
V
IL
Maximum Low -
Level Input Voltage
V
OUT
= V
CC
-0.1 V *
I
OUT
20
A
2.0
4.5
6.0
0.3
0.8
1.1
0.3
0.8
1.1
0.3
0.8
1.1
V
V
OH
Minimum High-
Level Output
Voltage
V
IN
=V
IL
I
OUT
20
A
2.0
4.5
6.0
1.8
4.0
5.5
1.8
4.0
5.5
1.8
4.0
5.5
V
V
IN
=V
IL
I
OUT
4.0 mA
I
OUT
5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low-
Level Output
Voltage
V
IN
=V
IH
I
OUT
20
A
2.0
4.5
6.0
0.2
0.5
0.5
0.2
0.5
0.5
0.2
0.5
0.5
V
V
IN
=V
IH
I
OUT
4.0 mA
I
OUT
5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
IN
Maximum Input
Leakage Current
V
IN
=V
CC
or GND
6.0
0.1
1.0
1.0
A
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
=V
CC
or GND
I
OUT
=0
A
6.0
2.0
20
40
A
* For V
CC
= 2.0 V, V
OUT
= 0.2 V or V
CC
- 0.2 V.
IN74HCU04
4
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF, Input t
r
=t
f
=6.0 ns)
V
CC
Guaranteed Limit
Symbol
Parameter
V
25
C to
-55
C
85
C
125
C
Unit
t
PLH
, t
PHL
Maximum Propagation Delay, Input A to
Output Y (Figures 1 and 2)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
4.5
6.0
70
15
13
85
18
16
100
22
19
ns
C
IN
Maximum Input Capacitance
-
10
10
10
pF
C
PD
Power Dissipation Capacitance (Per Inverter)
T
A
=25?, V
CC
=5.0 V
pF
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC
2
f+I
CC
V
CC
For load considerations, see Chepter 4.
15
tr
VCC
GND
90%
50%
10%
90%
50%
10%
INPUT A
OUTPUT Y
tPHL
tPLH
tTHL
tTLH
tf
* Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 1. Switching Waveforms. Figure 2. Test Circuit
LOGIC DETAIL
(1/6 of Device Show)
A
V
CC
Y
IN74HCU04
5
TYPICAL APPLICATIONS
Crystal Oscillator
Stable RC Oscillator
R2
1/6 HCU04
C1
R2 > > R1
C1 < C2
Vout
C2
R1
R2
R1
C
1/6 HCU04
1/6 HCU04
1/6 HCU04
Vout
Schmitt Trigger
High Input Single -Stage Amplifier
with a 2 to 6 V Supply Range
R2
R1
Vin
Vout
1/6 HCU04 1/6 HCU04
R2 > 6R1
VCC
INPUT
OUTPUT
1 M
1 M
1/6 HCU04
Multi-Stage Amplifier
LED Driver
VCC
INPUT
OUTPUT
1/6 HCU04 1/6 HCU04 1/6 HCU04
+V
1/6 HCU04
For reduced power suplly current, use high-efficiency LEDs
such as the Hewlett-Packard HLMP series or equivalent
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