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Электронный компонент: IW4093BD

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TECHNICAL DATA
142
Quad 2-Input NAND Schmitt Triggers
High-Voltage Silicon-Gate CMOS
The IW4093B consists of four Schmitt-trigger circuits. Each circuit
functions as a two-input NAND gate with Schmitt-trigger action on
both inputs. The gate switches at different points for positive- and
negative- going signals. The difference between the positive voltage
(V
P
) and the negative voltage (V
N
) is defined as hysteresis voltage (V
H
)
(see Fig.1).
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1
A at 18 V over full package-
temperature range; 100 nA at 18 V and 25
C
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
IW4093B
ORDERING INFORMATION
IW4093BN Plastic
IW4093BD SOIC
T
A
= -55
to 125
C for all packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
IW4093B
143
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +20
V
V
IN
DC Input Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
10
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
P
D
Power Dissipation per Output Transistor
100
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65
to 125
C
SOIC Package: : - 7 mW/
C from 65
to 125
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
3.0
18
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
IW4093B
144
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
-55
C
25
C
125
C
Unit
V
T
+min
Minimum Positive-
Going Input
Threshold Voltage
Input on terminals A or B;
other inputs to V
CC
5.0
10
15
2.2
4.6
6.8
2.2
4.6
6.8
2.2
4.6
6.8
V
Input on terminals A and B;
other inputs to V
CC
5.0
10
15
2.6
5.6
6.3
2.6
5.6
6.3
2.6
5.6
6.3
V
T
+max
Maximum Positive-
Going Input
Threshold Voltage
Input on terminals A or B;
other inputs to V
CC
5.0
10
15
3.6
7.1
10.8
3.6
7.1
10.8
3.6
7.1
10.8
V
Input on terminals A and B;
other inputs to V
CC
5.0
10
15
4
8.2
12.7
4
8.2
12.7
4
8.2
12.7
V
T
-min
Minimum Negative-
Going Input
Threshold Voltage
Input on terminals A or B;
other inputs to V
CC
5.0
10
15
0.9
2.5
4
0.9
2.5
4
0.9
2.5
4
V
Input on terminals A and B;
other inputs to V
CC
5.0
10
15
1.4
3.4
4.8
1.4
3.4
4.8
1.4
3.4
4.8
V
T
-max
Maximum Negative-
Going Input
Threshold Voltage
Input on terminals A or B;
other inputs to V
CC
5.0
10
15
2.8
5.2
7.4
2.8
5.2
7.4
2.8
5.2
7.4
V
Input on terminals A and B;
other inputs to V
CC
5.0
10
15
3.2
6.6
9.6
3.2
6.6
9.6
3.2
6.6
9.6
V
H
min
Note
Minimum Hysteresis
Voltage
Input on terminals A or B;
other inputs to V
CC
5.0
10
15
0.3
1.2
1.6
0.3
1.2
1.6
0.3
1.2
1.6
V
Input on terminals A and B;
other inputs to V
CC
5.0
10
15
0.3
1.2
1.6
0.3
1.2
1.6
0.3
1.2
1.6
V
H
max
Note
Maximum Hysteresis
Voltage
Input on terminals A or B;
other inputs to V
CC
5.0
10
15
1.6
3.4
5
1.6
3.4
5
1.6
3.4
5
V
Input on terminals A and B;
other inputs to V
CC
5.0
10
15
1.6
3.4
5
1.6
3.4
5
1.6
3.4
5
I
IN
Maximum Input
Leakage Current
V
IN
= GND or V
CC
18
0.1
0.1
1.0
A
IW4093B
145
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND) - continued
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
-55
C
25
C
125
C
Unit
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
= GND or V
CC
5.0
10
15
20
1
2
4
20
1
2
4
20
30
60
120
600
A
I
OL
Minimum Output Low
(Sink) Current
V
IN
= GND or V
CC
U
OL
=0.4 V
U
OL
=0.5 V
U
OL
=1.5 V
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.36
0.9
2.4
mA
I
OH
Minimum Output
High (Source) Current
V
IN
= GND or V
CC
U
OH
=2.5 V
U
OH
=4.6 V
U
OH
=9.5 V
U
OH
=13.5 V
5.0
5.0
10
15
-2.0
-0.64
-1.6
-4.2
-1.6
-0.51
-1.3
-3.4
-1.15
-0.36
-0.9
-2.4
mA
V
OH
Minimum High-Level
Output Voltage
V
IN
=GND or V
CC
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
4.95
9.95
14.95
V
V
OL
Maximum Low-Level
Output Voltage
V
IN
= V
CC
5.0
10
15
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
Note. V
H
min>(V
T+
min)-(V
T-
max); V
H
max=(V
T+
max)+(V
T-
min).
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF, R
L
=200k
, Input t
r
=t
f
=20 ns)
V
CC
Guaranteed Limit
Symbol
Parameter
V
-55
C
25
C
125
C
Unit
t
PLH
, t
PHL
Maximum Propagation Delay, Input A or B to
Output Y (Figure 2)
5.0
10
15
380
180
130
380
180
130
760
360
260
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any Output
(Figure 2)
5.0
10
15
200
100
80
200
100
80
400
200
160
ns
C
IN
Maximum Input Capacitance
-
7.5
pF
IW4093B
146
a) Definition of V
T
+, V
T
-, V
H
b) Transfer characteristic of 1 of 4 gates
c) Test setup
Figure 1. Hysteresis definition, characteristic, and test setup
Figure 2. Switching Waveforms
EXPANDED LOGIC DIAGRAM
(1/4 of the Device)