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Электронный компонент: 8XC151SA

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Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel's Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
March 1996
COPYRIGHT
INTEL CORPORATION 1996
Order Number 272814-001
8XC151SA SB
HIGH-PERFORMANCE
CHMOS MICROCONTROLLER
Commercial Express
Y
MCS
51 Microcontroller Compatible
Instruction Set
Y
Pin Compatible with 44-lead PLCC and
40-lead PDIP MCS 51 Sockets
Y
Fast Instruction Pipeline
Y
16-bit Internal Code Fetch
Y
8-bit Min 2-clock External Code Fetch
in Page Mode
Y
User-selectable Configurations
External Wait States (0-3 wait states)
Page Mode
Y
64K External Code Memory Space
Y
64K External Data Memory Space
Y
ROM OTPROM Options
8 Kbytes (SA) 16 Kbytes (SB)
or without ROM OTPROM
Y
256 Bytes On-Chip RAM
Y
Power Management
Idle Mode
Powerdown Mode
Y
32 Programmable I O Lines
Y
Seven Maskable Interrupt Sources with
Four Programmable Priority Levels
Y
Three Flexible 16-bit Timer counters
Y
Hardware Watchdog Timer
Y
Programmable Counter Array
High-speed Output
Compare Capture Operation
Pulse Width Modulator
Watchdog Timer
Y
Programmable Serial I O Port
Framing Error Detection
Automatic Address Recognition
Y
High-performance CHMOS Technology
Y
Static Standby to 16-MHz Operation
Y
Package Options (PDIP PLCC)
The 8XC151SA SB has an MCS 51 microcontroller compatible instructon set It is available in 40-pin PDIP and
44-lead PLCC compatible with the MCS 51 microcontroller The 8XC151SA SB has 256 bytes of on-chip RAM
and is available in 8 16 Kbytes of on-chip ROM OTPROM or without ROM OTPROM A variety of new
features such as programmable wait states page mode and extended ALE can be selected using the new
user-programmable configuration
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 1
Figure 1 8XC151SA SB Block Diagram
2
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
TEMPERATURE RANGE
With the commercial (standard) temperature option
the device operates over the temperature range 0 C
to a70 C The express temperature option provides
b
40 C to a85 C device operation
PROLIFERATION OPTIONS
Table 1 lists the proliferation options See Figure 2
for the 8XC151SA SB family nomenclature
Table 1 Proliferation Options
8XC151SA SB
(0 MHz 16 MHz 5V
g
10%)
80C151SB
CPU-only
83C151SA
8K ROM
83C151SB
16K ROM
87C151SA
8K OTPROM
87C151SB
16K OTPROM
PROCESS INFORMATION
This device is manufactured on a complimentary
high-performance
metal-oxide
semiconductor
(CHMOS) process Additional process and reliability
information is available in Intel's
Components Quali-
ty and Reliability Handbook
(order number 210997)
All thermal impedance data is approximate for static
air conditions at 1 watt of power dissipation Values
change depending on operating conditions and ap-
plication requirements The Intel
Packaging Hand-
book
(order number 240800) describes Intel's ther-
mal impedance test methodology
Table 2 Thermal Characteristics
Package Type
i
JA
i
JC
44-Lead PLCC
46 C W
16 C W
40-Pin PDIP
45 C W
16 C W
PACKAGE OPTIONS
Table 3 lists the 8XC151SA SB packages
Table 3 Package Information
Pkg
Definition
Temperature
N
44-Lead PLCC
0 C to a70 C
P
40-Pin Plastic DIP
0 C to a70 C
TN
44-Lead PLCC
b
40 C to a85 C
TP
40-Pin Plastic DIP
b
40 C to a85 C
3
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 2
Figure 2 The 8XC151SA SB Family Nomenclature
Table 4 Description of Product Nomenclature
Parameter
Options
Description
Temperature and Burn-in
no mark
Commercial operating temperature range (0 C to 70 C) with Intel
standard burn-in
Options
T
Express operating temperature range (b40 C to 85 C) with Intel
standard burn-in
Packaging Options
N
44-lead Plastic Leaded Chip Carrier (PLCC)
P
40-pin Plastic Dual In-line Package (PDIP)
Program Memory
0
Without ROM OTPROM
Options
3
ROM
7
User programmable OTPROM
Process Information
C
CHMOS
Product Family
151
8-bit controller architecture
Device Memory Options
SA SB
256 bytes RAM 8 16 Kbyte ROM OTPROM or without ROM
OTPROM
Device Speed
16
External clock frequency
4
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 3
Figure 3 8XC151SA SB 44-Lead PLCC Package
5
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 4
Figure 4 8XC151SA SB 40-Pin PDIP and Ceramic DIP Packages
6
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 5 PLCC DIP Signal Assignment Arranged by Functional Categories
Address
Data
Name
PLCC
DIP
AD0 P0 0
43
39
AD1 P0 1
42
38
AD2 P0 2
41
37
AD3 P0 3
40
36
AD4 P0 4
39
35
AD5 P0 5
38
34
AD6 P0 6
37
33
AD7 P0 7
36
32
A8 P2 0
24
21
A9 P2 1
25
22
A10 P2 2
26
23
A11 P2 3
27
24
A12 P2 4
28
25
A13 P2 5
29
26
A14 P2 6
30
27
A15 P2 7
31
28
Processsor Control
Name
PLCC
DIP
P3 2 INT0
14
12
P3 3 INT1
15
13
EA
V
PP
35
31
RST
10
9
XTAL1
21
18
XTAL2
20
19
Input Output
Name
PLCC
DIP
P1 0 T2
2
1
P1 1 T2EX
3
2
P1 2 ECI
4
3
P1 3 CEX0
5
4
P1 4 CEX1
6
5
P1 5 CEX2
7
6
P1 6 CEX3
8
7
P1 7 CEX4
9
8
P3 0 RXD
11
10
P3 1 TXD
13
11
P3 4 T0
16
14
P3 5 T1
17
15
Power
Ground
Name
PLCC
DIP
V
CC
44
40
V
CC2
12
V
SS
22
20
V
SS1
1
V
SS2
23 34
EA
V
PP
35
31
Bus Control
Status
Name
PLCC
DIP
P3 6 WR
18
16
P3 7 RD
19
17
ALE PROG
33
30
PSEN
32
29
7
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 6 Signal Assignments Arranged by Package Number
PLCC
DIP
Name
1
V
SS1
2
1
P1 0 T2
3
2
P1 1 T2EX
4
3
P1 2 ECI
5
4
P1 3 CEX0
6
5
P1 4 CEX1
7
6
P1 5 CEX2
8
7
P1 6 CEX3
9
8
P1 7 CEX4
10
9
RST
11
10
P3 0 RXD
12
V
CC2
13
11
P3 1 TXD
14
12
P3 2 INT0
15
13
P3 3 INT1
16
14
P3 4 T0
17
15
P3 5 T1
18
16
P3 6 WR
19
17
P3 7 RD
20
18
XTAL2
21
19
XTAL1
22
20
V
SS
PLCC
DIP
Name
23
V
SS2
24
21
A8 P2 0
25
22
A9 P2 1
26
23
A10 P2 2
27
24
A11 P2 3
28
25
A12 P2 4
29
26
A13 P2 5
30
27
A14 P2 6
31
28
A15 P2 7
32
29
PSEN
33
30
ALE PROG
34
V
SS2
35
31
EA
V
pp
36
32
AD7 P0 7
37
33
AD6 P0 6
38
34
AD5 P0 5
39
35
AD4 P0 4
40
36
AD3 P0 3
41
37
AD2 P0 2
42
38
AD1 P0 1
43
39
AD0 P0 0
44
40
V
CC
8
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
SIGNAL DESCRIPTIONS
Table 7 Signal Descriptions
Signal
Type
Description
Multiplexed
Name
With
A15 8
O
Address Lines
Upper address lines for the external bus
P2 7 0
AD7 0
I O
Address Data Lines
Multiplexed lower address lines and data lines
P0 7 0
for external memory
ALE
O
Address Latch Enable
ALE signals the start of an external bus
PROG
cycle and indicates that valid address information is available on lines
A15 8 and AD7 0 An external latch can use ALE to demultiplex the
address from the address data bus
CEX4 0
I O
Programmable Counter Array (PCA) Input Output Pins
These
P1 6 3
are input signals for the PCA capture mode and output signals for the
P1 7
PCA compare mode and PCA PWM mode
EA
I
External Access
Directs program memory accesses to on-chip or
V
PP
off-chip code memory For EA
e
0 all program memory accesses
are off-chip For EA
e
1 an access is to on-chip ROM OTPROM if
the address is within the range of the on-chip ROM OTPROM
otherwise the access is off-chip The value of EA
is latched at
reset For devices without on-chip ROM OTPROM EA
must be
strapped to ground
ECI
I
PCA External Clock Input
External clock input to the 16-bit PCA
P1 2
timer
INT1 0
I
External Interrupts 0 and 1
These inputs set bits IE1 0 in the TCON
P3 3 2
register If bits IT1 0 in the TCON register are set bits IE1 0 are set by
a falling edge on INT1
INT0
If bits INT1 0 are clear bits IE1 0
are set by a low level on INT1 0
PROG
I
Programming Pulse
The programming pulse is applied to this pin
ALE
for programming the on-chip OTPROM
P0 7 0
I O
Port 0
This is an 8-bit open-drain bidirectional I O port
AD7 0
P1 0
I O
Port 1
This is an 8-bit bidirectional I O port with internal pullups
T2
P1 1
T2EX
P1 2
ECI
P1 7 3
CEX3 0
CEX4
P2 7 0
I O
Port 2
This is an 8-bit bidirectional I O port with internal pullups
A15 8
The descriptions of A15 8 P2 7 0 and AD7 0 P0 7 0 are for the nonpage-mode chip configuration (compatible with
44-lead PLCC and 40-pin DIP MCS 51 microcontrollers) If the chip is configured for page-mode operation port 0 carries
the lower address bits (A7 0) and port 2 carries the upper address bits (A15 8) and the data (D7 0)
9
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 7 Signal Descriptions
(Continued)
Signal
Type
Description
Multiplexed
Name
With
P3 0
I O
Port 3
This is an 8-bit bidirectional I O port with internal pullups
RXD
P3 1
TXD
P3 3 2
INT1 0
P3 5 4
T1 0
P3 6
WR
P3 7
RD
PSEN
O
Program Store Enable
Read signal output This output is asserted
for a memory address range that depends on bits RD0 and RD1 in
configuration byte UCONFIG0
RD
O
Read
Read signal output to external data memory
P3 7
RST
I
Reset
Reset input to the chip Holding this pin high for 64 oscillator
periods while the oscillator is running resets the device The port pins
are driven to their reset conditions when a voltage greater than V
IH1
is
applied whether or not the oscillator is running This pin has an
internal pulldown resistor which allows the device to be reset by
connecting a capacitor between this pin and V
CC
Asserting RST when the chip is in idle mode or powerdown mode
returns the chip to normal operation
RXD
I O
Receive Serial Data
RXD sends and receives data in serial I O
P3 0
mode 0 and receives data in serial I O modes 1 2 and 3
T1 0
I
Timer 1 0 External Clock Inputs
When timer 1 0 operates as a
P3 5 4
counter a falling edge on the T1 0 pin increments the count
T2
I O
Timer 2 Clock Input Output
For the timer 2 capture mode this
P1 0
signal is the external clock input For the clock-out mode it is the
timer 2 clock output
T2EX
I
Timer 2 External Input
In timer 2 capture mode a falling edge
P1 1
initiates a capture of the timer 2 registers In auto-reload mode a
falling edge causes the timer 2 registers to be reloaded In the up-
down counter mode this signal determines the count direction
1 e up 0 e down
TXD
O
Transmit Serial Data
TXD outputs the shift clock in serial I O mode
P3 1
0 and transmits serial data in serial I O modes 1 2 and 3
V
CC
PWR
Supply Voltage
Connect this pin to the a5V supply voltage
V
CC2
PWR
Secondary Supply Voltage 2
This supply voltage connection is
provided to reduce power supply noise Connection of this pin to the
a
5V supply voltage is recommended However when using the
8XC151SA SB as a pin-for-pin replacement for the 8XC51FX V
SS2
can be unconnected without loss of compatibility (Not available on
DIP)
V
PP
I
Programming Supply Voltage
The programming supply voltage is
EA
applied to this pin for programming the on-chip OTPROM
The descriptions of A15 8 P2 7 0 and AD7 0 P0 7 0 are for the nonpage-mode chip configuration (compatible with
44-lead PLCC and 40-pin DIP MCS 51 microcontrollers) If the chip is configured for page-mode operation port 0 carries
the lower address bits (A7 0) and port 2 carries the upper address bits (A15 8) and the data (D7 0)
10
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 7 Signal Descriptions
(Continued)
Signal
Type
Description
Multiplexed
Name
With
V
SS
GND
Circuit Ground
Connect this pin to ground
V
SS1
GND
Secondary Ground
This ground is provided to reduce ground bounce
and improve power supply bypassing Connection of this pin to ground
is recommended However when using the 8XC151SA SB as a pin-
for-pin replacement for the 8XC51BH V
SS1
can be unconnected
without loss of compatibility (Not available on DIP)
V
SS2
GND
Secondary Ground 2
This ground is provided to reduce ground
bounce and improve power supply bypassing Connection of this pin to
ground is recommended However when using the 8XC151SA SB as
a pin-for-pin replacement for the 8XC51FX V
SS2
can be unconnected
without loss of compatibility (Not available on DIP)
WR
O
Write
Write signal output to external memory
P3 6
XTAL1
I
Input to the On-chip Inverting Oscillator Amplifier
To use the
internal oscillator a crystal resonator circuit is connected to this pin If
an external oscillator is used its output is connected to this pin XTAL1
is the clock source for internal timing
XTAL2
O
Output of the On-chip Inverting Oscillator Amplifier
To use the
internal oscillator a crystal resonator circuit is connected to this pin If
an external oscillator is used leave XTAL2 unconnected
The descriptions of A15 8 P2 7 0 and AD7 0 P0 7 0 are for the nonpage-mode chip configuration (compatible with
44-lead PLCC and 40-pin DIP MCS 51 microcontrollers) If the chip is configured for page-mode operation port 0 carries
the lower address bits (A7 0) and port 2 carries the upper address bits (A15 8) and the data (D7 0)
11
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Ambient Temperature under Bias
Commercial
0 C to a70 C
Express
b
40 C to a85 C
Storage Temperature
b
65 C to a150 C
Voltage on EA
V
PP
Pin to V
SS
0V to a13 0V
Voltage on Any other Pin to V
SS
b
0 5V to a6 5V
I
OL
per I O Pin
15 mA
Power Dissipation
1 5W
NOTE
Maximum power dissipation is based on package
heat-transfer limitations not device power con-
sumption
OPERATING CONDITIONS
T
A
(Ambient Temperature Under Bias)
Commercial
0 C to a70 C
Express
b
40 C to a85 C
V
CC
(Digital Supply Voltage)
4 5V to 5 5V
V
SS
0V
NOTICE
This document contains information on
products in the design phase of development Do not
finalize a design with this information Revised infor-
mation will be published when the product is avail-
able Verify with your local Intel Sales office that you
have the latest data sheet before finalizing a design
WARNING Stressing the device beyond the ``Absolute
Maximum Ratings'' may cause permanent damage
These are stress ratings only Operation beyond the
``Operating Conditions'' is not recommended and ex-
tended exposure beyond the ``Operating Conditions''
may affect device reliability
12
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
DC CHARACTERISTICS
Parameter values apply to all devices unless otherwise indicated
Table 8 DC Characteristics at V
CC
e
4 5V b 5 5V
Symbol
Parameter
Min
Typical
Max
Units
Test Conditions
V
IL
Input Low Voltage
b
0 5
0 2V
CC
b
0 1
V
(except EA )
V
IL1
Input Low Voltage
0
0 2V
CC
b
0 3
V
(EA )
V
IH
Input High Voltage
0 2V
CC
a
0 9
V
CC
a
0 5
V
(except XTAL1 RST)
V
IH1
Input High Voltage
0 7V
CC
V
CC
a
0 5
V
(XTAL1 RST)
V
OL
Output Low Voltage
0 3
V
I
OL
e
100 mA
(Port 1 2 3)
0 45
I
OL
e
1 6 mA
1 0
I
OL
e
3 5 mA
(Note 1 Note 2)
V
OL1
Output Low Voltage
0 3
V
I
OL
e
200 mA
(Port 0 ALE PSEN )
0 45
I
OL
e
3 2 mA
1 0
I
OL
e
7 0 mA
(Note 1 Note 2)
V
OH
Output High Voltage
V
CC
b
0 3
V
I
OH
e b
10 mA
(Port 1 2 3 ALE
V
CC
b
0 7
I
OH
e b
30 mA
PSEN )
V
CC
b
1 5
I
OH
e b
60 mA
(Note 3)
NOTES
1 Under steady-state (non-transient) conditions I
OL
must be externally limited as follows
Maximum I
OL
per port pin
10 mA
Maximum I
OL
per 8-bit port
port 0
26 mA
ports 1 3
15 mA
Maximum Total I
OL
for
all output pins
71 mA
If I
OL
exceeds the test conditions V
OL
may exceed the related specification Pins are not guaranteed to sink current
greater than the listed test conditions
2 Capacitive loading on ports 0 and 2 may cause spurious noise pulses above 0 4V on the low-level outputs of ALE and
ports 1 2 and 3 The noise is due to external bus capacitance discharging into the port 0 and port 2 pins when these
pins change from high to low In applications where capacitive loading exceeds 100 pF the noise pulses on these
signals may exceed 0 8V It may be desirable to qualify ALE or other signals with a Schmitt trigger or CMOS-level input
logic
3 Capacitive loading on ports 0 and 2 causes the V
OH
on ALE and PSEN
to drop below the specification when the
address lines are stabilizing
4 Typical values are obtained using V
CC
e
5 0 T
A
e
25 C and are not guaranteed
13
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 8 DC Characteristics at V
CC
e
4 5V b 5 5V
(Continued)
Symbol
Parameter
Min
Typical
Max
Units
Test Conditions
V
OH1
Output High Voltage
V
CC
b
0 3
V
I
OH
e b
200 mA
(Port 0 in External
V
CC
b
0 7
I
OH
e b
3 2 mA
Address)
V
CC
b
1 5
I
OH
e b
7 0 mA
V
OH2
Output High Voltage
V
CC
b
0 3
V
I
OH
e b
200 mA
(Port 2 in External
V
CC
b
0 7
I
OH
e b
3 2 mA
Address during Page
V
CC
b
1 5
I
OH
e b
7 0 mA
Mode)
I
IL
Logical 0 Input Cur-
b
50
m
A
V
IN
e
0 45V
rent (Port 1 2 3)
I
LI
Input Leakage Cur-
g
10
m
A
0 45
k
V
IN
k
V
CC
rent (Port 0)
I
TL
Logical 1-to-0 Transi-
b
650
m
A
V
IN
e
2 0V
tion Current (Port 1
2 3)
R
RST
RST Pulldown Resistor
40
225
kX
C
IO
Pin Capacitance
10
pF
F
OSC
e
16 MHz
(Note 4)
T
A
e
25 C
I
PD
Powerdown Current
10
k
20
m
A
(Note 4)
I
DL
Idle Mode Current
13
20
mA
F
OSC
e
16 MHz
(Note 4)
I
CC
Operating Current
71
85
mA
F
OSC
e
16 MHz
(Note 4)
NOTES
1 Under steady-state (non-transient) conditions I
OL
must be externally limited as follows
Maximum I
OL
per port pin
10 mA
Maximum I
OL
per 8-bit port
port 0
26 mA
ports 1 3
15 mA
Maximum Total I
OL
for
all output pins
71 mA
If I
OL
exceeds the test conditions V
OL
may exceed the related specification Pins are not guaranteed to sink current
greater than the listed test conditions
2 Capacitive loading on ports 0 and 2 may cause spurious noise pulses above 0 4V on the low-level outputs of ALE and
ports 1 2 and 3 The noise is due to external bus capacitance discharging into the port 0 and port 2 pins when these
pins change from high to low In applications where capacitive loading exceeds 100 pF the noise pulses on these
signals may exceed 0 8V It may be desirable to qualify ALE or other signals with a Schmitt trigger or CMOS-level input
logic
3 Capacitive loading on ports 0 and 2 causes the V
OH
on ALE and PSEN
to drop below the specification when the
address lines are stabilizing
4 Typical values are obtained using V
CC
e
5 0 T
A
e
25 C and are not guaranteed
14
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 5
All other 8XC151SA SB pins are unconnected
Figure 5 I
PD
Test Condition Powerdown Mode V
CC
e
2 0V b 5 5V
15
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
AC Characteristics
Table
8
lists
AC
timing
parameters
for
the
8XC151SA SB with no wait states External wait
states can be added by extending PSEN
RD
WR
and or by extending ALE In the table Notes
3 and 5 mark parameters affected by an ALE wait
state and Notes 4 and 5 mark parameters affected
by a PSEN
RD
WR
wait state
Figures 5 11 show the bus cycles with the timing
parameters
Table 9 AC Characteristics (Capacitive Loading e 50 pF)
Symbol
Parameter
Max F
OSC
(1)
F
OSC
Variable
Units
Min
Max
Min
Max
F
OSC
XTAL1 Frequency
N A
N A
0
16
MHz
T
OSC
1 F
OSC
N A
N A
ns
12 MHz
83 3
16 MHz
62 5
T
LHLL
ALE Pulse Width
ns
12 MHz
68 3
(3)
16 MHz
47 5
(1a2M)
T
OSC
b
15
T
AVLL
Address Valid to ALE Low
ns
12 MHz
58 3
(3)
16 MHz
37 5
(1a2M)
T
OSC
b
25
T
LLAX
Address Hold after ALE Low
ns
12 MHz
10
16 MHz
10
10
T
RLRH
(2)
RD
or PSEN
Pulse Width
ns
12 MHz
151 6
(4)
16 MHz
110
2(1aN)
T
OSC
b
15
T
WLWH
WR
Pulse Width
ns
12 MHz
151 6
(4)
16 MHz
110
2(1aN)
T
OSC
b
15
T
LLRL
(2)
ALE Low to RD
or PSEN
Low
ns
12 MHz
58 3
16 MHz
37 5
Tosc b 25
T
LHAX
ALE High to Address Hold
ns
12 MHz
83 3
(3)
16 MHz
62 5
(1a2M)
T
OSC
NOTES
1 16 MHz
2 Specifications for PSEN
are identical to those for RD
3 In the formula M
e
Number of wait states (0 or 1) for ALE
4 In the formula N
e
Number of wait states (0 1 2 or 3) for RD
PSEN
WR
5 ``Typical'' specifications are untested and not guaranteed
16
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 9 AC Characteristics (Capacitive Loading e 50 pF)
(Continued)
Symbol
Parameter
Max F
OSC
(1)
F
OSC
Variable
Units
Min
Max
Min
Max
T
RLDV
(2) RD
PSEN
Low to valid Data Instruction In
ns
12 MHz
111 6
(4)
16 MHz
70
2(1aN)
T
OSC
b
55
T
RHDX
(2) RD
PSEN
Data Instruction Hold
0
0
ns
after RD
and PSEN
High
T
RLAZ
(2) RD
PSEN
Low to Address Float
Typ e 0
2
Typ e 0
2
ns
(5)
(5)
T
RHDZ1
Instruction Float after RD
PSEN
High
ns
12 MHz
0
16 MHz
0
0
T
RHDZ2
Data Float after RD
PSEN
High
ns
12 MHz
151 6
16 MHz
110
2T
OSC
b
15
T
RHLH1
RD
PSEN
High to ALE High (Instruction)
ns
12 MHz
0
16 MHz
0
0
T
RHLH2
RD
PSEN
High to ALE High (Data)
ns
12 MHz
156 6
16 MHz
115
2T
OSC
b
10
T
WHLH
WR
High to ALE High
ns
12 MHz
166 6
16 MHz
125
2T
OSC
T
AVDV1
Address (P0) Valid to Valid Data Instruction In
ns
12 MHz
253 2
(3)
16 MHz
170
4(1aM 2)
T
OSC
b
80
T
AVDV2
Address (P2) Valid to Valid Data Instruction In
ns
12 MHz
268 2
(3)
16 MHz
185
4(1aM 2)
T
OSC
b
65
T
AVDV3
Address (P0) Valid to Valid Instruction In
ns
12 MHz
116 6
16 MHz
75
2T
OSC
b
50
NOTES
1 16 MHz
2 Specifications for PSEN
are identical to those for RD
3 In the formula M
e
Number of wait states (0 or 1) for ALE
4 In the formula N
e
Number of wait states (0 1 2 or 3) for RD
PSEN
WR
5 ``Typical'' specifications are untested and not guaranteed
17
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 9 AC Characteristics (Capacitive Loading e 50 pF)
(Continued)
Symbol
Parameter
Max F
OSC
(1)
F
OSC
Variable
Units
Min
Max
Min
Max
T
AVRL
(2)
Address Valid to RD
PSEN
Low
ns
12 MHz
126 6
(3)
16 MHz
85
2(1aM)
T
OSC
b
40
T
AVWL1
Address (P0) Valid to WR
Low
ns
12 MHz
126 6
(3)
16 MHz
85
2(1aM)
T
OSC
b
40
T
AVWL2
Address (P2) Valid to WR
Low
ns
12 MHz
141 6
(3)
16 MHz
100
2(1aM)
T
OSC
b
25
T
WHQX
Data Hold after WR
High
ns
12 MHz
58 3
16 MHz
37 5
T
OSC
b
25
T
QVWH
Data Valid to WR
High
ns
12 MHz
146 6
(4)
16 MHz
105
2(1aN)
T
OSC
b
20
T
WHAX
WR
High to Address Hold
ns
12 MHz
146 6
16 MHz
105
2T
OSC
b
20
NOTES
1 16 MHz
2 Specifications for PSEN
are identical to those for RD
3 In the formula M
e
Number of wait states (0 or 1) for ALE
4 In the formula N
e
Number of wait states (0 1 2 or 3) for RD
PSEN
WR
5 ``Typical'' specifications are untested and not guaranteed
18
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
SYSTEM BUS TIMINGS
272814 6
The value of this parameter depends on wait states See the table of AC characteristics
Figure 6 External Read Data Bus Cycle in Nonpage Mode
19
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 7
The value of this parameter depends on wait states See the table of AC characteristics
Figure 7 External Instruction Bus Cycle in Nonpage Mode
20
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 8
The value of this parameter depends on wait states See the table of AC characteristics
Figure 8 External Write Data Bus Cycle in Nonpage Mode
21
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 9
The value of this parameter depends on wait states See the table of AC characteristics
Figure 9 External Read Data Bus Cycle in Page Mode
22
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 10
The value of this parameter depends on wait states See the table of AC characteristics
Figure 10 External Write Data Bus Cycle in Page Mode
23
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 11
The value of this parameter depends on wait states See the table of AC characteristics
A page hit (i e a code fetch to the same 256-byte ``page'' as the previous code fetch) requires one state (2T
OSC
)
a page miss requires two states (4T
OSC
)
During a sequence of page hits PSEN
remains low until the end of the last page-hit cycle
Figure 11 External Instruction Bus Cycle in Page Mode
24
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
AC Characteristics
Serial Port Shift Register Mode
Table 10 Serial Port Timing Shift Register Mode
Symbol
Parameter
Min
Max
Units
T
XLXL
Serial Port Clock Cycle Time
12T
OSC
ns
T
QVSH
Output Data Setup to Clock Rising Edge
10T
OSC
b
133
ns
T
XHQX
Output Data Hold after Clock Rising Edge
2T
OSC
b
117
ns
T
XHDX
Input Data Hold after Clock Rising Edge
0
ns
T
XHDV
Clock Rising Edge to Input Data Valid
10T
OSC
b
133
ns
272814 12
TI and RI are set during S1P1 of the peripheral cycle following the shift of the eighth bit
Figure 12 Serial Port Waveform
Shift Register Mode
25
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
External Clock Drive
Table 11 External Clock Drive
Symbol
Parameter
Min
Max
Units
1 T
CLCL
Oscillator Frequency (F
OSC
)
16
MHz
T
CHCX
High Time
20
ns
T
CLCX
Low Time
20
ns
T
CLCH
Rise Time
10
ns
T
CHCL
Fall Time
10
ns
272814 13
Figure 13 External Clock Drive Waveforms
272814 14
AC inputs during testing are driven at V
CC
b
0 5V for a logic 1 and 0 45V for a logic 0 Timing measurements are made
at a min of V
IH
for logic 1 and V
OL
for a logic 0
Figure 14 AC Testing Input Output Waveforms
26
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 15
For timing purposes a port pin is no longer floating when a 100 mV change from load voltage occurs and begins to float
when a 100 mV change from the loading V
OH
V
OL
level occurs with I
OL
I
OH
e
g
20 mA
Figure 15 Float Waveforms
272814 16
Figure 16 Setup for Programming and Verifying Nonvolatile Memory
27
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
PROGRAMMING AND VERIFYING
NONVOLATILE MEMORY
The 87C151SA SB has several areas of nonvolatile
memory that can be programmed and or verified
on-chip code memory (8 16 Kbytes) lock bits (3
bits) encryption array (128 bytes) and signature
bytes (3 bytes)
Figure 16 shows the setup for programming and or
verifying the nonvolatile memory Table 11 lists the
programming and verification operations and indi-
cates which operations apply to the different ver-
sions of the 87C151SA SB It also specifies the sig-
nals on the programming input (PROG ) and the
ports The ROM OTPROM mode (port 0) specifies
the operation (program or verify) and the base ad-
dress of the memory area The addresses (ports 1
and 3) are relative to the base address (On-chip
memory for a 16-Kbyte ROM OTPROM device is lo-
cated at address range 0000H 3FFFH The other
areas of the ROM OTPROM are outside the memo-
ry address space and are accessible only during pro-
gramming and verification )
Information in Figures 17 and 18 define the configu-
ration bits Figure 19 shows the waveforms for the
programming and verification cycles and Table 12
lists the timing specifications The signature bytes of
the
83C151SA SB
ROM
versions
and
the
87C151SA SB OTPROM versions are factory pro-
grammed Table 13 lists the addresses and the con-
tents of the signature bytes
Factory-programmed ROM and OTPROM versions
of 8XC151SA SB use configuration byte information
supplied in a separate hexadecimal disk file
8XC151SA SB
devices
without
internal
ROM OTPROM arrays fetch configuration byte in-
formation from external application memory based
on an internal address range of FFF9 8H
NOTE
The V
PP
source in Figure 16 must be well regu-
lated and free of glitches The voltage on the V
PP
pin must not exceed the specified maximum
even under transient conditions
28
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 12 Programming and Verification Modes Mode
8XC151SA SB
Addresses
Mode
PROG
P0
P2
P1 (high) P3 (low)
Notes
X e 7
X e 3
Program On-Chip Code
Y
5 Pulses
68H
Data
0000H 3FFFH (16K)
1
Memory
0000H 1FFFH (8K)
Verify On-Chip Code
Y
Y
High
28H
Data
0000H 3FFFH (16K)
Memory
0000H 1FFFH (8K)
Program Configuration
2
Bytes
Verify Configuration
2
Bytes
Program Lock Bits
Y
25 Pulses
6BH
XX
0001H 0003H
1 3
Verify Lock Bits
Y
Y
High
2BH
Data
0000H
4
Program Encryption
Y
25 Pulses
6CH
Data
0000H 007FH
1
Array
Verify Signature Bytes
Y
Y
High
29H
Data
0030H 0031H 0060H
NOTES
1 The PROG
pulse waveform is shown in Figure 19
2 Factory-programmed ROM and OTPROM versions of 8XC151SA SB use configuration byte information supplied in a
separate hexadecimal disk file 8XC151SA SB devices without internal ROM OTPROM arrays fetch configuration byte
information from external application memory based on an internal address range of FFF9 8H
3 When programming the lock bits the data bits on port 2 are don't care Identify the lock bits with the address as follows
LB3 - 0003H LB2 - 0002H LB1 - 0001H
4 The three lock bits are verified in a single operation The states of the lock bits appear simultaneously at port 2 as
follows LB3 - P2 3 LB2 - P2 2 LB1 - P2 1 High
e
programmed
29
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
UCONFIG0
Address FFF8H
7
0
WSA1
WSA0
XALE
PAGE
Bit
Bit
Function
Number
Mnemonic
7
Reserved
6 5
WSA1
Wait State Select for external code
WSA0
WSA1
WSA0
Description
(see Note)
1
1
No wait states
1
0
Insert 1 wait state
0
1
Insert 2 wait states
0
0
Insert 3 wait states
4
XALE
Extend Ale
If this bit is set the time of the ALE pulse is T
OSC
Clearing this bit
extends the time of the ALE pulse from T
OSC
to 3T
OSC
which adds
one external wait state
1
PAGE
Page Mode Select
Clear this bit for page-mode (A15 8 D7 0 on P2 and A7 0 on P0) Set
this bit for nonpage-mode (A15 8 on P2 and A7 0 D7 0 on P0
(compatible with MCS 51 microcontrollers))
NOTE
Factory-programmed ROM and OTPROM versions of 8XC151SA SB use configuration byte information supplied in a
separate hexadecimal disk file 8XC151SA SB devices without internal ROM OTPROM arrays fetch configuration byte
information from external application memory based on an internal address range of FFF9 8H
Figure 17 Configuration Byte 0
30
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
UCONFIG1
Address FFF9H
7
0
WSB1
WSB0
Bit
Bit
Function
Number
Mnemonic
7 5
Reserved set these bits when writing to UCONFIG1
2 1
WSB1
Wait States for external data
WSB0
WSB1
WSB0
Description
1
1
No wait states
1
0
Insert 1 wait state
0
1
Insert 2 wait states
0
0
Insert 3 wait states
NOTE
Factory-programmed ROM and OTPROM versions of 8XC151SA SB use configuration byte information supplied in a
separate hexadecimal disk file 8XC151SA SB devices without internal ROM OTPROM arrays fetch configuration byte
information from external application memory based on an internal address range of FFF9 8H
Figure 18 Configuration Byte 1
31
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
272814 17
Figure 19 Timing for Programming and Verification of Nonvolatile Memory
32
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Table 13 Nonvolatile Memory Programming and Verification Characteristics at
T
A
e
21 b 27 C V
CC
e
5V and V
SS
e
0V
Symbol
Definition
Min
Max
Units
V
PP
Programming Supply Voltage
12 5
13 5
D C Volts
I
PP
Programming Supply Current
75
mA
F
OSC
Oscillator Frequency
4 0
6 0
MHz
T
AVGL
Address Setup to PROG
Low
48T
OSC
T
GHAX
Address Hold after PROG
48T
OSC
T
DVGL
Data Setup to PROG
Low
48T
OSC
T
GHDX
Data Hold after PROG
48T
OSC
T
EHSH
ENABLE High to V
PP
48T
OSC
T
SHGL
V
PP
Setup to PROG
Low
10
m
s
T
GHSL
V
PP
Hold after PROG
10
m
s
T
GLGH
PROG
Width
90
110
m
s
T
AVQV
Address to Data Valid
48T
OSC
T
ELQV
ENABLE Low to Data Valid
48To
SC
T
EHQZ
Data Float after ENABLE
0
48T
OSC
T
GHGL
PROG
High to PROG
Low
10
m
s
NOTE
Notation for timing parameters
A
e
Address
D
e
Data
E
e
Enable
G
e
PROG
H
e
High
L
e
Low
Q
e
Data out
S
e
Supply (V
PP
)
V
e
Valid
X
e
No Longer Valid
Z
e
Floating
Table 14 Contents of the Signature Bytes
ADDRESS
CONTENTS
DEVICE TYPE
30H
89H
Indicates Intel Devices
31H
48H
Indicates MCS 151 core product
60H
7BH
Indicates 83C151SB device
60H
FBH
Indicates 87C151SB device
60H
7AH
Indicates 83C151SA device
60H
FAH
Indicates 87C151SA device
33