01/99
B-7
2N3993, 2N3993A
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
25 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
At 25C free air temperature:
2N3993
2N3993A
Process PJ99
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
25
V
I
G
= 1 A, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
4
9.5
4
9.5
V
V
DS
= 10V, I
D
= 1 A
Drain Saturation Current (Pulsed)
I
DSS
10
10
mA
V
DS
= 10V, V
GS
= V
Drain Reverse Current
I
DGO
1.2
1.2
nA
V
DG
= 15V, I
S
= A
1.2
1.2
A
V
DG
= 15V, I
S
= A
T
A
= 150C
Drain Cutoff Current
I
D(OFF)
1.2
1.2
nA
V
DS
= 10V, V
GS
= 10 V
1
1
A
V
DS
= 10V, V
GS
= 10 V
T
A
= 150C
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
150
150
V
GS
= V, I
D
= A
f = 1 kHz
Common Source
| Y
fs
|
6
12
7
12
mS
V
DS
= 10V, V
GS
= V
f = 1 kHz
Forward Transmittance
Common Source Input Capacitance
C
iss
16
12
pF
V
DS
= 10V, V
GS
= V
f = 1 MHz
Common Source
C
rss
4.5
3
pF
V
DS
= , V
GS
= 10V
f = 1 MHz
Reverse Transfer Capacitance
Choppers
High Speed Commutators
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-7
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