01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
40 V
Gate Current
50 mA
Continuous Device Power Dissipation
300mW
Power Derating
1.7 mW/C
Storage Temperature Range
65C to + 200C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
2N4867
2N4868
2N4869
At 25C free air temperature:
2N4867A
2N4868A
2N4869A
Process NJ16
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
40
40
40
V
I
G
= 1A, V
DS
= V
Gate Reverse Current
I
GSS
0.25
0.25
0.25
nA
V
GS
= 30V, V
DS
= V
0.25
0.25
0.25
A
V
GS
= 30V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
0.7
2
1
3
1.8
5
V
V
DS
= 20V, I
D
= 1 A
Drain Saturation Current (Pulsed)
I
DSS
0.4
1.2
1
3
2.5
7.5
mA
V
DS
= 20V, V
GS
= V
Dynamic Electrical Characteristics
Common Source Forward
g
fs
700
2000
1000
3000
1300
4000
S
V
DS
= 20V, V
GS
= V
f = 1 kHz
Transconductance
Common Source Output Conductance
g
os
1.5
4
10
S
V
DS
= 20V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
25
25
25
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Common Source Reverse
C
rss
5
5
5
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit
e
N
20
20
20
nV/
HZ
V
DS
= 10V, V
GS
= V
f = 10 Hz
Input Noise Voltage
10
10
10
nV/
HZ
V
DS
= 10V, V
GS
= V
f = 1 kHz
V
DS
= 10V, V
GS
= V
f = 1 kHz
Noise Figure
NF
1
1
1
dB
(2N4867, 68, 69)
R
G
= 20 k
(2N4867A, 68A, 69A)
R
G
= 5 k
Audio Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 12:00 PM Page B-17
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