01/99
B-45
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
25 V
Continuous Forward Gate Current
100 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
TO52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25C free air temperature:
IFN5432
IFN5433
IFN5434
Process NJ903
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
25
25
V
I
G
= 1A, V
DS
= V
Gate Reverse Current
I
GSS
200
200
200
pA
V
GS
= 15V, V
DS
= V
200
200
200
nA
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
4
10
3
9
1
4
V
V
DS
= 5V, I
G
= 3 nA
Drain Saturation Current (Pulsed)
I
DSS
150
100
30
mA
V
DS
= 15V, V
GS
= V
Drain Cutoff Current
I
D(OFF)
200
200
200
pA
V
DS
= 5V, V
GS
= 10V
200
200
200
nA
V
DS
= 5V, V
GS
= 10V
T
A
= 150C
Drain Source ON Voltage
V
DS
50
70
100
mV
V
GS
= V, I
D
= 10 mA
Static Drain Source ON Resistance
r
DS(ON)
2
5
7
10
V
DS
= V, I
D
= 10 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
5
7
10
V
GS
= V, I
D
= A
f = 1 kHz
Common Source Input Capacitance
C
iss
60
60
60
pF
V
DS
= V, V
GS
= 10V
f = 1 MHz
Common Source Reverse
C
rss
20
20
20
pF
V
DS
= V, V
GS
= 10V
f = 1 MHz
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
t
d(on)
4
4
4
ns
V
DD
= 1.5 V, V
GS(ON)
= V
Rise Time
t
r
1
1
1
ns
V
GS(OFF)
= 12V, I
D(ON)
= 10 mA
Turn OFF Delay Time
t
d(off)
6
6
6
ns
(IFN5432)
R
L
= 145
Fall Time
t
f
30
30
30
ns
(IFN5433)
R
L
= 143
(IFN5433)
R
L
= 140
Analog Low On Resistance
Switches
Choppers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-45
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