B-46
01/99
IFN5564, IFN5565, IFN5566
N-Channel Dual Silicon Junction Field-Effect Transistor
Wide Band Differential
Amplifier
Commutators
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
40 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
650 mW
Power Derating
3.3 mW/C
TO71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25C free air temperature:
IFN5564
IFN5565
IFN5566
Process NJ72
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
40
40
40
V
I
G
= 1A, V
DS
= V
Gate Leakage Voltage
I
GSS
100
100
100
pA
V
GS
= 20V, V
DS
= V
200
200
200
nA
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
0.5
3
0.5
3
0.5
3
V
V
DS
= 15V, I
D
= 1 nA
Gate Source Voltage
V
GS(f)
1
1
1
V
V
DS
= V, I
G
= 2 mA
Saturation Current (Pulsed)
I
DSS
5
30
5
30
5
30
mA
V
DS
= 15V, V
GS
= V
Static Drain Source ON Resistance
rDS
(ON)
100
100
100
I
D
= 1 mA, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
7000 12500 7000 12500 7000 12500 hmo
V
DG
= 15V, I
D
= 2 mA
f = 1 kHz
Forward Transconductance
7000
7000
7000
hmo
f = 100 MHz
Common Source Output Transconductance
g
os
45
45
45
hmo
V
DS
= 15V, I
D
= 2 mA
f = 1 kHz
Common Source Input Capacitance
C
iss
12
12
12
pF
V
DS
= 15V, I
D
= 2 mA
f = 1 MHz
Common Source Reverse Transfer Capacitance
C
rss
3
3
3
pF
V
DS
= 15V, I
D
= 2 mA
f = 1 MHz
Noise Figure
NF
1
1
1
dB
V
DS
= 15V, I
D
= 2 mA
f = 10 Hz
R
G
= 1 M
Equivalent Short Circuit Input Noise Voltage
e
N
50
50
50
nV/
Hz
V
DG
= 15V, I
D
= 2 mA
f = 10 Hz
Characteristics
Saturation Drain Current Ratio (Pulsed)
I
DSS1
0.95
1
0.95
1
0.95
1
V
DG
= 15V, V
GS
= V
I
DSS2
Differential Gate Source Voltage
|V
GS(1)
V
GS(2)
|
5
10
20
mV
V
DS
= 15V, I
D
= 2 mA
Gate Source Voltage Differential Drift
|V
GS(f)
V
GS(f)
|
10
25
50
V/C
V
DS
= 15V,
T
A
= 25C T
B
= 125C
T
10
25
50
V/C
I
D
= 2 mA
T
A
= 55C T
B
= 25C
Transconductance Ratio (Pulsed)
g
fs(1)
0.95
1
0.9
1
0.9
1
V
DS
= 15V, I
D
= 2 mA
g
fs(2)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-46
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